APT75DL60S [MICROSEMI]
Ultrasoft Recovery Rectifi er Diode; 超软恢复Rectifi器二极管
| 型号： | APT75DL60S |
| 厂家： | 
Microsemi |
| 描述： | Ultrasoft Recovery Rectifi er Diode |
| 文件： | 总4页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT75DL60B(G)
APT75DL60S(G)
600V 75A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Ultrasoft Recovery Rectifier Diode
(B)
PRODUCT APPLICATIONS
PRODUCT BENEFITS
• Soft Switching - High Q
rr
PRODUCT FEATURES
• Ultrasoft Recovery Times (t
D3PAK
)
• Anti-Parallel Diode
-Switchmode Power Supply
rr
• Low Noise Switching
- Reduced Ringing
• Popular TO-247 Package or
-Inverters
1
Surface Mount D3PAK Package
• Ultra Low Forward Voltage
• Low Leakage Current
(S)
2
2
1
• Applications
• Higher Reliability Systems
- Induction Heating
• Minimizes or eliminates
snubber
• Resonant Mode Circuits
-ZVS and ZCS Topologies
- Phase Shifted Bridge
2
1
1 - Cathode
2 - Anode
Back of Case -Cathode
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol Characteristic / Test Conditions
Ratings
Unit
Maximum D.C. Reverse Voltage
VR
VRRM
VRWM
IF(AV)
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
600
Volts
Maximum Average Forward current (TC = 112°C, Duty Cycle = 0.5)
RMS Forward Currrent (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
Operating and Storage Junction Temperature Range
Lead Temperature for 10 Seconds
75
121
IF(RMS)
IFSM
Amps
°C
320
TJ, TSTG
TL
-55 to 175
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
Typ
Max
Unit
IF = 75A
1.25
2.0
1.6
VF
Forward Voltage
IF = 150A
Volts
IF = 75A, TJ = 125°C
VR = 600V
1.25
25
IRM
CT
Maximum Reverse Leakage Current
Junction Capacitance, VR = 200V
μA
VR = 600V, TJ = 125°C
250
69
pF
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
APT75DL60B_S(G)
Symbol Characteristic / Test Conditions
Min
Typ
Max
Unit
trr
trr
Reverse Recovery Time
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
56
460
2174
11
ns
Reverse Recovery Time
IF = 75A, diF/dt = -200A/μs
VR = 400V, TC = 25°C
Qrr
IRRM
trr
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
nC
Amps
ns
597
4326
15
IF = 75A, diF/dt = -200A/μs
VR = 400V, TC = 125°C
Qrr
IRRM
trr
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
nC
Amps
ns
355
7215
42
IF = 75A, diF/dt = -1000A/μs
VR = 400V, TC = 125°C
Qrr
IRRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
nC
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
Typ
Max
Unit
Junction-to-Case Thermal Resistance
0.40
°C/W
oz
RθJC
WT
0.22
5.9
Package Weight
g
10
lb·in
N·m
Torque
Maximum Mounting Torque
1.1
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Note:
t
1
t
2
t
1
t
/
2
Duty Factor D =
Peak T = P x Z
+ T
C
J
DM
θJC
10-5
10-4
10-3
RECTANGULAR PULSE DURATION (seconds)
10-2
10-1
1.0
10
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TYPICAL PERFORMANCE CURVES
APT75DL60B_S(G)
160
800
700
600
500
400
300
200
100
T
= 125°C
= 400V
J
150A
75A
TJ= 125°C
140
V
R
TJ= 150°C
TJ= 55°C
120
100
80
60
40
20
0
TJ= 25°C
37.5A
0
0
200
400
600
800
1000
0
1
2
3
-diF/dt, CURRENT RATE OF CHANGE (A/ꢀs)
V , ANODE-TO-CATHODE VOLTAGE (V)
F
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
FIGURE 2, Forward Current vs. Forward Voltage
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
50
T
= 125°C
= 400V
T
= 125°C
= 400V
150A
J
J
V
V
150A
45
40
35
30
25
20
15
10
5
R
R
75A
75A
37.5A
37.5A
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/ꢀs)
-diF/dt, CURRENT RATE OF CHANGE (A/ꢀs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
160
1.2
140
120
100
80
1.0
IRRM
0.8
tRR
QRR
0.6
60
0.4
0.2
0
40
20
0
25
50
75
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
100
125
150
175
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C)
J
FIGURE 6, Dynamic Parameters vs Junction Temperature
700
600
500
400
300
200
100
0
1
10
100
400
V , REVERSE VOLTAGE (V)
R
FIGURE 8, Junction Capacitance vs. Reverse Voltage
APT75DL60B_S(G)
V
r
diF/dt Adjust
+18V
0V
D.U.T.
t
Q
/
rr rr
Waveform
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
2
IF - Forward Conduction Current
1
4
5
6
diF/dt - Rate of Diode Current Change Through Zero Crossing.
Zero
3
4
IRRM - Maximum Reverse Recovery Current.
0.25 I
RRM
t
- Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
3
rr
Slope = diM/
dt
2
5
6
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of t
rr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
D3PAK Package Outline
e1 100% Sn
5.31 (.209)
15.49 (.610)
4.90 (.193)
5.10 (.201)
1.45 (.057)
1.60 (.063)
15.85 (.624)
13.30 (.524)
13.60(.535)
16.26 (.640)
1.49 (.059)
2.49 (.098)
16.05(.632)
1.00 (.039)
1.15(.045)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
12.40 (.488)
12.70 (.500)
18.70 (.736)
19.10 (.752)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.65 (.026)
4.50 (.177) Max.
1.20 (.047)
1.40 (.055)
0.020 (.001)
0.250 (.010)
1.90 (.075)
2.10 (.083)
2.40 (.094)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
2.70 (.106)
1.15 (.045)
1.45 (.057)
19.81 (.780)
20.32 (.800)
2.70 (.106)
2.90 (.114)
(Base of Lead)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
(2 Plcs.)
Heat Sink (Cathode)
and Leads
are Plated
Anode
Cathode
2.21 (.087)
2.59 (.102)
Anode
Cathode
Dimensions in Millimeters (Inches)
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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