APT8014L2LLG [MICROSEMI]
Power Field-Effect Transistor, 52A I(D), 800V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN;
| 型号： | APT8014L2LLG |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 52A I(D), 800V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT8014L2LL
800V 52A 0.140Ω
R
POWER MOS 7 MOSFET
TO-264
Max
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
D
S
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
G
• Popular TO-264 Max Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT8014L2LL
UNIT
VDSS
ID
Drain-Source Voltage
800
52
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
208
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
893
PD
7.14
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
52
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
2
Drain-Source On-State Resistance
(VGS = 10V, 26A)
0.140
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
IDSS
µA
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT8014L2LL
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
7238
1402
248
285
30
V
= 0V
GS
Output Capacitance
V
= 25V
DS
pF
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
GS
V
= 400V
Qgs
Qgd
td(on)
tr
DD
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
I
= 52A @ 25°C
D
170
20
RESISTIVESWITCHING
V
= 15V
GS
19
V
= 400V
DD
ns
µJ
I
= 52A @ 25°C
D
td(off)
69
Turn-off Delay Time
R
= 0.6Ω
G
tf
Fall Time
15
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
1091
1135
1662
1383
V
= 533V, V = 15V
GS
DD
I
= 52A, R = 1.7Ω
Turn-off Switching Energy
D
G
INDUCTIVESWITCHING@125°C
6
Turn-on Switching Energy
V
= 533V, V = 15V
GS
DD
I
= 52A, R = 1.7Ω
Turn-off Switching Energy
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol
IS
MIN
TYP
MAX
Characteristic / Test Conditions
UNIT
52
208
1.3
Continuous Source Current (Body Diode)
Amps
ISM
1
Pulsed Source Current
(Body Diode)
2
VSD
t rr
Diode Forward Voltage (VGS = 0V, IS = -ID52A)
Volts
ns
Reverse Recovery Time (IS = -ID52A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID52A, dlS/dt = 100A/µs)
930
29
Q rr
µC
dv
/
dv
5
V/ns
Peak Diode Recovery
/
dt
10
dt
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.14
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
4 Starting T = +25°C, L = 2.37mH, R = 25Ω, Peak I = 52A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
device itself.
I
≤ -I 52A
/
≤ 700A/µs
V
R ≤ 800V T ≤ 150°C
J
dt
S
D
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.16
0.14
0.9
0.12
0.7
0.10
0.08
0.5
Note:
t
0.06
1
0.3
t
2
0.04
t
1
Duty Factor D =
/
t
2
Peak T = P
x Z + T
0.02
0
0.1
J
DM
θJC C
0.05
SINGLEPULSE
10-5
10-4
10-3
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
10-2
10-1
1.0
Typical Performance Curves
APT8014L2LL
140
120
100
80
8V
7V
V
=15 & 10V
GS
RC MODEL
6.5V
Junction
temp. ( ”C)
0.0509
0.0522F
0.988F
6V
Power
(Watts)
60
5.5V
0.0894
40
Case temperature
5V
20
0
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
140
1.40
V
> I (ON) x
R
(ON)MAX.
DS
NORMALIZED TO
DS
D
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
= 10V
@
26A
GS
120
100
80
60
40
20
0
1.30
1.20
1.10
1.00
V
=10V
T
= -55°C
GS
J
T
J
= +25°C
V
=20V
80
GS
0.90
0.80
T
= +125°C
J
0
1
2
3
4
5
6
7
8
0
20
40
60
100
120
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.15
1.10
1.05
1.00
60
50
40
30
20
0.95
0.90
10
0
25
50
75
100
125
150
-50 -25
0
25
50
75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
1.2
2.5
I
= 26A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT8014L2LL
208
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
100
50
C
iss
100µS
C
oss
1,000
10
5
1mS
10mS
T
=+25°C
C
C
rss
T =+150°C
J
SINGLEPULSE
10
1
100
1
100
800
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
200
16
I
= 52A
D
100
12
V
=160V
T =+150°C
J
DS
T =+25°C
J
V
=400V
DS
V
=640V
8
DS
10
4
0
1
0
50 100 150 200 250 300 350 400
Q ,TOTALGATECHARGE(nC)
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
160
140
V
= 533V
DD
= 3Ω
t
d(off)
R
T
140
120
G
120
100
80
60
40
20
0
= 125°C
J
L = 100µH
t
f
V
= 533V
DD
= 3Ω
100
80
60
40
20
0
R
T
G
= 125°C
J
L = 100µH
t
r
t
d(on)
10
20
30
40
I
50
(A)
60
70
80
10
20
30
40
I
50
(A)
60
70
80
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
12000
10000
8000
6000
4000
3000
2500
2000
1500
1000
V
= 533V
V
I
= 533V
DD
DD
= 52A
R
= 3Ω
G
D
E
off
T
= 125°C
T
= 125°C
J
J
L = 100µH
L = 100µH
EON includes
EON includes
diode reverse recovery.
diode reverse recovery.
E
on
E
on
E
off
500
0
2000
0
10
20
30
40
50
(A)
60
70
80
0
5
10 15 20 25 30 35 40 45 50
I
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8014L2LL
10 %
90%
Gate Voltage
Drain Voltage
T
= 125 C
T
= 125 C
J
J
t
d(off)
t
d(on)
90%
90%
t
t
f
r
5 %
10%
0
5 %
10 %
Drain Current
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT30DF60
VCE
IC
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264MAXTM(L2)PackageOutline
4.60 (.181)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.80 (.071)
2.01 (.079)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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