APT94N60L2C3 [MICROSEMI]
Super Junction MOSFET; 超级结MOSFET
| 型号： | APT94N60L2C3 |
| 厂家： | 
Microsemi |
| 描述： | Super Junction MOSFET |
| 文件： | 总5页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT94N60L2C3
600V 94A 0.035Ω
Super Junction MOSFET
TO-264
Max
COOLMOS
• Ultra low RDS ON
Power Semiconductors
(
)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-264 Max Package
D
S
G
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
MAXIMUMRATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT94N60L2C3
UNIT
VDSS
ID
Drain-Source Voltage
600
94
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
282
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±20
±30
833
Watts
W/°C
PD
6.67
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Lead Temperature: 0.063" from Case for 10 Sec.
dv
/
Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C)
V/ns
50
dt
7
IAR
EAR
EAS
Amps
20
Repetitive Avalanche Current
7
Repetitive Avalanche Energy
1
mJ
4
1800
Single Pulse Avalanche Energy
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA)
600
2
Drain-Source On-State Resistance
(VGS = 10V, 60A)
0.03
1.0
0.035
50
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5.4mA)
IDSS
µA
500
±200
3.9
IGSS
nA
VGS(th)
Volts
2.10
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
™
"COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT94N60L2C3
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
13600
4400
290
505
48
V
= 0V
GS
Output Capacitance
V
= 25V
DS
pF
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
640
nC
GS
V
= 300V
Qgs
Qgd
td(on)
tr
DD
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
I
= 94A @ 25°C
D
240
18
RESISTIVESWITCHING
V
= 13V
GS
27
V
= 380V
DD
ns
I
= 94A @ 125°C
td(off)
110
165
Turn-off Delay Time
Fall Time
D
R
= 0.9Ω
G
tf
8
12
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
Eon
Eoff
2040
3515
2920
3970
Turn-on Switching Energy
V
= 400V, V = 15V
GS
DD
I
= 94A, R = 5Ω
Turn-off Switching Energy
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Turn-on Switching Energy
V
= 400V V = 15V
GS
DD
I
= 94A, R = 5Ω
Turn-off Switching Energy
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol
MIN
TYP
MAX
Characteristic / Test Conditions
UNIT
IS
Continuous Source Current (Body Diode)
94
282
1.2
Amps
1
ISM
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
VSD
t rr
(VGS = 0V, IS = -94A)
Volts
ns
1
Reverse Recovery Time (IS = -94A, dlS/dt = 100A/µs, VR = 350V)
Reverse Recovery Charge (IS = -94A, dlS/dt = 100A/µs, VR = 350V)
861
46
Q rr
µC
dv
/
dv
5
V/ns
Peak Diode Recovery
/
dt
dt
6
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.15
62
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 36.0mH, R = 25Ω, Peak I = 10A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 94A
/
≤ 700A/µs
V
R ≤ V
T ≤ 150°C
J
dt
S
D
DSS
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
Microsemireservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.9
0.7
0.5
0.3
Note:
t
1
t
2
SINGLEPULSE
t
1
Duty Factor D =
Peak T = P x Z
/
t
0.1
2
+ T
0.05
J
DM θJC
C
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT94N60L2C3
200
180
160
140
120
100
80
V
=15 &10V
GS
6V & 6.5V
5.5V
TJ ( C)
TC ( C)
5V
0.0618
0.0885
Dissipated Power
(Watts)
60
0.0230
0.436
4.5V
40
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
4V
20
20
0
0
5
10
15
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
1.40
200
NORMALIZED TO
V
> I (ON) x
250µSEC. PULSE TEST
R
(ON)MAX.
DS
D
DS
T
= -55°C
J
V
= 10V @ 47A
180
160
140
120
100
80
GS
@
<0.5 % DUTY CYCLE
1.30
1.20
1.10
1.00
V
=10V
GS
T
= +25°C
J
60
V
=20V
GS
40
0.90
0.80
T
= +125°C
J
20
0
0
1
2
3
4
5
6
0
20 40 60 80 100 120 140 160 180
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.15
1.10
1.05
1.00
0.95
100
80
60
40
20
0
0.90
0.85
25
50
75
100
125
150
-50 -25
0
25
50
75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
3
1.2
I
= 47A
= 10V
D
V
GS
2.5
2.0
1.5
1.0
1.1
1.0
0.9
0.8
0.5
0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
Typical Performance Curves
APT94N60L2C3
60,000
10,000
C
iss
C
oss
Graph removed
1,000
100
10
C
rss
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
16
200
I
= 94A
D
100
12
T =+150°C
J
V
=120V
DS
T =+25°C
J
V
=300V
DS
8
V
=480V
DS
10
4
0
1
0
100 200 300 400 500 600 700 800
Q ,TOTALGATECHARGE(nC)
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
250
600
V
= 400V
DD
= 5Ω
R
T
G
t
500
400
300
200
d(off)
= 125°C
J
200
150
100
L = 100µH
t
f
V
= 400V
DD
= 5Ω
R
T
G
= 125°C
J
L = 100µH
t
r
50
0
100
0
t
d(on)
10
30
50
70
90
(A)
110 130 150
10
30
50
70
I
90
(A)
110 130 150
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
8000
7000
6000
5000
4000
3000
2000
16000
14000
12000
10000
8000
6000
4000
2000
0
V
= 400V
V
I
= 400V
DD
= 5Ω
DD
= 94A
R
T
G
D
= 125°C
T
= 125°C
J
J
L = 100µH
E
L = 100µH
EON includes
off
EON includes
E
off
diode reverse recovery.
diode reverse recovery.
E
on
E
on
1000
0
10
30
50
70
D
90
(A)
110 130 150
0
5
10 15 20 25 30 35 40 45 50
I
R ,GATERESISTANCE(Ohms)
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT94N60L2C3
Gate Voltage
T
90%
10%
Gate Voltage
T
TJ = 125 C
TJ = 125
C
td(on)
td(off)
Collector Current
tf
90%
Collector Current
Collector Voltage
t
r
90%
0
5 %
Collector Voltage
5%
10%
10%
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT30DF60
VCE
IC
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264MAXTM(L2)PackageOutline
4.60 (.181)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.80 (.071)
2.01 (.079)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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