APTDF100H601G [MICROSEMI]
Fast Diode Full Bridge Power Module; 快速二极管全桥电源模块
| 型号： | APTDF100H601G |
| 厂家： | 
Microsemi |
| 描述： | Fast Diode Full Bridge Power Module |
| 文件： | 总4页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTDF100H601G
Fast Diode Full Bridge
Power Module
VRRM = 600V
IC = 100A* @ Tc = 80°C
3
4
Application
•
•
•
•
Uninterruptible Power Supply (UPS)
Induction heating
CR1
CR3
CR4
Welding equipment
5
6
1
2
High speed rectifiers
Features
CR2
7
•
•
•
•
•
•
•
Ultra fast recovery times
Soft recovery characteristics
High blocking voltage
High current
Low leakage current
Very low stray inductance
High level of integration
8
9 10
Benefits
•
Outstanding performance at high frequency
operation
•
•
•
•
•
•
Low losses
Low noise switching
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
All multiple inputs and outputs must be shorted together
3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10
Absolute maximum ratings
Symbol
VR
Parameter
Maximum DC reverse Voltage
Max ratings
Unit
600
V
VRRM
Maximum Peak Repetitive Reverse Voltage
TC = 25°C
TC = 80°C
TC = 45°C
135 *
100 *
500
Maximum Average Forward
IF(AV)
IFSM
Duty cycle = 50%
Current
A
Non-Repetitive Forward Surge Current
8.3ms
* Specification of diode device but output current must be limited to 75A to not exceed a delta of temperature greater
than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTDF100H601G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
IF = 100A
Min Typ Max Unit
1.6
2.0
1.3
2.0
VF
Diode Forward Voltage
IF = 200A
V
IF = 100A
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
500
IRM
CT
Maximum Reverse Leakage Current
Junction Capacitance
VR = 600V
VR = 200V
µA
pF
190
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
160
220
290
1530
5
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ns
IF = 100A
VR = 400V
Qrr
nC
A
di/dt = 200A/µs
IRRM
13
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
100
2890
44
ns
nC
A
IF = 100A
VR = 400V
Tj = 125°C
di/dt=1000A/µs
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
Junction to Case Thermal Resistance
0.55 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
2500
-40
-40
-40
2.5
V
TJ
175
125
100
4.7
80
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
To heatsink
M4
N.m
g
Wt
Package Weight
2 - 4
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APTDF100H601G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5
0.4
0.3
0.2
0.1
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.01
0
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
300
250
200
150
100
50
300
250
200
150
100
50
TJ=125°C
VR=400V
200 A
100 A
TJ=125°C
TJ=25°C
50 A
0
0.0
0.5
1.0
1.5
2.0
2.5
0
200 400 600 800 1000 1200
-diF/dt (A/µs)
VF, Anode to Cathode Voltage (V)
QRR vs. Current Rate Charge
IRRM vs. Current Rate of Charge
4
3
2
1
0
60
50
40
30
20
10
0
200 A
200 A
TJ=125°C
VR=400V
TJ=125°C
VR=400V
100 A
100 A
50 A
50 A
0
200
400
600
800 1000 1200
0
200 400 600 800 1000 1200
-diF/dt (A/µs)
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
150
1400
1200
1000
800
600
400
200
0
Duty Cycle = 0.5
TJ=175°C
125
100
75
50
25
0
1
10
100
1000
25
50
75
100 125 150 175
VR, Reverse Voltage (V)
Case Temperature (°C)
3 - 4
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APTDF100H601G
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相关型号：
APTDF200H100G
Bridge Rectifier Diode, 1 Phase, 255A, 1000V V(RRM), Silicon, POWER MODULE-4
MICROSEMI
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