APTGF300DA120 [MICROSEMI]
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-5;
| 型号： | APTGF300DA120 |
| 厂家： | 
Microsemi |
| 描述： | Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 局域网 栅 功率控制 晶体管 |
| 文件： | 总5页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF300DA120
VCES = 1200V
IC = 300A @ Tc = 80°C
Boost chopper
Application
•
•
•
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
•
Non Punch Through (NPT) FAST IGBT
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
Benefits
VBUS
0/VBUS
OUT
•
Outstanding performance at high frequency
operation
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
E2
G2
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
Tc = 25°C
Tc = 80°C
Tc = 25°C
400
300
800
±20
2080
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
Tc = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C 600A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 5
APT website – http://www.advancedpower.com
APTGF300DA120
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
Test Conditions
VGE = 0V, IC = 4mA
Min Typ Max Unit
1200
V
VGE = 0V
VCE = 1200V
Tj = 25°C
0.4
25
3.3
4
6
ICES
Zero Gate Voltage Collector Current
mA
Tj = 125°C
Tj = 25°C
Tj = 125°C
VGE =15V
IC = 300A
3.9
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
VGE = VCE, IC = 12mA
VGE = ±20V, VCE = 0V
4.5
6.5
±1
V
µA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
VGE = 0V
21
V
CE = 25V
nF
2.9
1.52
70
f = 1MHz
Inductive Switching (125°C)
V
GE = 15V
50
ns
VBus = 600V
IC = 300A
RG = 2Ω
Td(off) Turn-off Delay Time
500
30
Tf
Fall Time
Eon
Eoff
Turn-on Switching Energy
Turn-off Switching Energy
17
mJ
18
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
50% duty cycle
IF(AV)
Maximum Average Forward Current
Tc = 70°C
400
A
IF = 400A
IF = 800A
IF = 400A
2.0
2.5
1.8
2.5
VF
Diode Forward Voltage
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 400A
VR = 800V
di/dt =800A/µs
420
580
5
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 400A
VR = 800V
di/dt =800A/µs
Qrr
µC
21.4
2 - 5
APT website – http://www.advancedpower.com
APTGF300DA120
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.06
0.16
RthJC
Junction to Case
°C/W
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
VISOL
2500
V
TJ
TSTG
TC
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
-40
-40
-40
3
150
125
100
5
3.5
280
°C
M6
M5
Torque Mounting torque
Wt Package Weight
N.m
g
For terminals
2
Package outline
3 - 5
APT website – http://www.advancedpower.com
APTGF300DA120
Typical Performance Curve
Output characteristics (VGE=15V)
Output characteristics (VGE=10V)
450
400
350
300
250
200
150
100
50
350
300
250
200
150
100
50
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
TJ=25°C
TJ=25°C
TJ=125°C
TJ=125°C
3
0
0
0
1
2
4
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
Gate Charge
20
16
12
8
600
500
400
300
200
100
0
250µs Pulse Test
< 0.5% Duty cycle
IC = 300A
VCE=600V
TJ = 25°C
VCE=800V
4
0
4
6
8
10
12
0
500
1000
1500
2000
2500
Gate Charge (nC)
VGE, Gate to Emitter Voltage (V)
Capacitance vs Collector to Emitter Voltage
Switching times vs collector current
1000
100
10
100
10
1
tdoff
VCE = 600V
VGE=±15V
RG=2ꢀ
Cies
tdon
tf
TJ = 125°C
Coes
Cres
tr
0
100
200
300
400
0
10
20
30
VCE, Collector to Emitter Voltage (V)
Ic, Collector current (A)
DC Collector Current vs Case Temperature
400
Switching energy losses vs Gate resistance
120
VCE = 600V
VGE=±15V
IC=300A
Eon
350
300
250
200
150
100
50
100
80
60
40
20
0
TJ = 125°C
Eoff
0
0
25
50
75
100 125 150
0
2
4
6
8
10 12 14 16
TC, Case Temperature (°C)
Gate resistance (Ohms)
4 - 5
APT website – http://www.advancedpower.com
APTGF300DA120
Minimum Switching Safe Operating
Switching times vs gate resistor
10000
1000
100
700
600
500
400
300
200
100
0
VCE = 600V, VGE=±15V
tdoff
IC=300A, TJ = 125°C
tdon
tr
tf
10
0
300
600
900
1200
1500
0
5
10
15
20
Gate resistance (Ohms)
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Operating Frequency vs Collector Current
100
VCE = 800V
D = 50%
RG = 2ꢀ
80
60
40
20
0
TJ = 125°C
50 100 150 200 250 300 350 400
IC, Collector Current (A)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
APT website – http://www.advancedpower.com
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Insulated Gate Bipolar Transistor, 375A I(C), 600V V(BR)CES, N-Channel, MODULE-4
MICROSEMI
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