APTGF350DU60G [MICROSEMI]
Dual common source NPT IGBT Power Module; 双共源NPT IGBT功率模块
| 型号： | APTGF350DU60G |
| 厂家： | 
Microsemi |
| 描述： | Dual common source NPT IGBT Power Module |
| 文件： | 总6页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF350DU60G
VCES = 600V
Dual common source
IC = 350A @ Tc = 80°C
NPT IGBT Power Module
Application
•
•
•
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
C1
C2
Q1
Q2
Features
•
Non Punch Through (NPT) Fast IGBT®
G1
E1
G2
E2
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
E
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
Benefits
G1
E1
C1
E
C2
•
Outstanding performance at high frequency
operation
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
E2
G2
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
430
V
Tc = 25°C
IC
Continuous Collector Current
A
Tc = 80°C
Tc = 25°C
350
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
1225
±20
V
W
Tc = 25°C
1562
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
800A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTGF350DU60G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
200
1750
2.5
VGE = 0V
ICES
Zero Gate Voltage Collector Current
µA
VCE = 600V
2.0
2.2
VGE =15V
IC = 360A
VGE = VCE, IC = 4mA
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
V
3
5
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
±300 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Qg
Input Capacitance
17.2
VGE = 0V
VCE = 25V
f = 1MHz
nF
Output Capacitance
1.88
1.6
Reverse Transfer Capacitance
Total gate Charge
1320
1160
800
26
VGE = 15V
VBus = 300V
IC = 360A
nC
Qge
Qgc
Gate – Emitter Charge
Gate – Collector Charge
Inductive Switching (25°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
25
150
ns
VBus = 400V
IC = 360A
30
26
RG = 1.25Ω
Inductive Switching (125°C)
VGE = 15V
25
170
ns
VBus = 400V
IC = 360A
Tf
Fall Time
40
RG = 1.25Ω
VGE = 15V
Tj = 125°C
VBus = 400V
Eon
Turn-on Switching Energy
17.2
mJ
IC = 360A
Eoff
Turn-off Switching Energy
Tj = 125°C
RG = 1.25Ω
14
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
600
V
µA
A
Tj = 25°C
VR=600V
750
1500
Maximum Reverse Leakage Current
Tj = 125°C
DC Forward Current
Tc = 80°C
IF = 400A
400
1.6
1.9
1.4
1.8
IF = 800A
IF = 400A
VF
Diode Forward Voltage
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
180
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 400A
220
1560
5800
VR = 400V
di/dt =800A/µs
Qrr
nC
2 - 6
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APTGF350DU60G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.08
0.16
RthJC
Junction to Case Thermal Resistance
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
150
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTGF350DU60G
Typical Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
1200
1000
800
600
400
200
0
1200
1000
800
600
400
200
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
TJ=-55°C
TJ=-55°C
< 0.5% Duty cycle
TJ=25°C
TJ=25°C
TJ=125°C
TJ=125°C
0
1
2
3
4
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
Gate Charge
1200
1000
800
600
400
200
0
18
16
14
12
10
8
VCE=120V
IC = 360A
250µs Pulse Test
< 0.5% Duty cycle
TJ = 25°C
VCE=300V
VCE=480V
6
4
TJ=125°C
2
0
TJ=-55°C
TJ=25°C
0
200 400 600 800 1000 1200 1400
0
1
2
3
4
5
6
7
8
9
10
VGE, Gate to Emitter Voltage (V)
Gate Charge (nC)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
4
3.5
3
8
7
6
5
4
3
2
1
0
TJ = 25°C
250µs Pulse Test
Ic=720A
Ic=360A
< 0.5% Duty cycle
Ic=720A
Ic=360A
2.5
2
1.5
1
Ic=180A
250µs Pulse Test
< 0.5% Duty cycle
Ic=180A
14
0.5
0
V
GE = 15V
6
8
10
12
16
-50 -25
0
25
50
75 100 125
V
GE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
500
400
300
200
100
0
1.20
1.10
1.00
0.90
0.80
0.70
-50 -25
0
25
50
75 100 125
0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
TC, Case Temperature (°C)
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APTGF350DU60G
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
35
30
25
20
15
250
200
150
100
50
VGE=15V,
TJ=125°C
VGE = 15V
Tj = 25°C
VGE=15V,
TJ=25°C
VCE = 400V
RG = 1.25Ω
VCE = 400V
RG = 1.25Ω
100
200
300
400
500
600
100
200
300
400
500
600
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
80
60
40
20
0
80
60
40
20
0
VCE = 400V
RG = 1.25Ω
VGE=15V,
TJ=125°C
TJ = 125°C
TJ = 25°C
VCE = 400V, VGE = 15V, RG = 1.25Ω
100
200
300
400
500
600
100
200
300
400
500
600
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
32
24
20
16
12
8
VCE = 400V
TJ = 125°C
VGE = 15V
VCE = 400V
G = 1.25Ω
R
RG = 1.25Ω
24
16
8
TJ=125°C,
GE=15V
TJ = 25°C
TJ=25°C,
GE=15V
V
V
4
0
100
0
200
300
400
500
600
100
200
300
400
500
600
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
Switching Energy Losses vs Gate Resistance
64
48
32
16
0
40
32
24
16
8
VCE = 400V
Eon, 720A
VCE = 400V
VGE = 15V
RG = 1.25Ω
Eon, 720A
Eoff, 720A
V
GE = 15V
Eoff, 720A
Eoff, 360A
TJ= 125°C
Eon, 360A
Eoff, 180A
Eon, 360A
Eoff, 360A
Eon, 180A
Eon, 180A
10
Eoff, 180A
25
0
0
2
4
6
8
12
0
50
75
100
125
Gate Resistance (Ohms)
TJ, Junction Temperature (°C)
5 - 6
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APTGF350DU60G
Capacitance vs Collector to Emitter Voltage
100000
Reverse Bias Safe Operating Area
900
800
700
600
500
400
300
200
100
0
Cies
10000
1000
100
Coes
Cres
0
10
20
30
40
50
0
200
400
600
800
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.9
0.7
0.5
0.3
Single Pulse
0.1
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Operating Frequency vs Collector Current
180
160
140
120
100
80
VCE = 400V
D = 50%
RG = 1.25Ω
TJ = 125°C
ZCS
TC=75°C
60
40
20
ZVS
Hard
switching
0
50 100 150 200 250 300 350 400 450
IC, Collector Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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