APTGF75H120T [MICROSEMI]
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-14;
| 型号： | APTGF75H120T |
| 厂家： | 
Microsemi |
| 描述： | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-14 局域网 栅 功率控制 晶体管 |
| 文件： | 总5页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF75H120T
VCES = 1200V
Full - Bridge
IC = 75A @ Tc = 80°C
NPT IGBT Power Module
Application
•
•
•
•
Welding converters
VBUS
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q3
Q1
G3
E3
G1
E1
Features
•
Non Punch Through (NPT) FAST IGBT
OUT1
OUT2
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Q2
Q4
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
G4
E4
G2
E2
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
NTC1
NTC2
0/VBUS
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
•
•
Internal thermistor for temperature monitoring
High level of integration
Benefits
•
Outstanding performance at high frequency
operation
G3
E3
G4
OUT2
•
•
•
•
•
Stable temperature behavior
Very rugged
E4
OUT1
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive TC of VCEsat
Low profile
VBUS
0/VBUS
E1
G1
E2
G2
NTC2
NTC1
•
•
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
Tc = 25°C
Tc = 80°C
Tc = 25°C
100
75
150
±20
500
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
Tc = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C 150A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 5
APT website – http://www.advancedpower.com
APTGF75H120T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
0.1
4
3.2
3.9
2
VGE = 0V
ICES
Zero Gate Voltage Collector Current
mA
VCE = 1200V
3.7
6.5
VGE =15V
IC = 75A
VGE = VCE, IC = 2.5 mA
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
IGES
V
V
4.5
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
±500 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
5.1
nF
Output Capacitance
0.7
0.4
120
50
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 600V
310
IC = 75A
20
RG = 7.5Ω
Inductive Switching (125°C)
130
60
360
30
9
VGE = 15V
ns
VBus = 600V
IC = 75A
Tf
Eon
Eoff
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
RG = 7.5Ω
mJ
4
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
Tj = 125°C
500
1000
IRM
Maximum Reverse Leakage Current
VR=1200V
µA
IF(AV)
VF
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
IF = 50A
Tc = 80°C
Tj = 25°C
Tj = 125°C
50
2.1
1.9
A
V
IF = 50A
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
60
100
4.2
9
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 600V
di/dt =1500A/µs
IF = 50A
Qrr
µC
VR = 600V
di/dt =1500A/µs
2 - 5
APT website – http://www.advancedpower.com
APTGF75H120T
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
68
4080
kΩ
B25/85 T25 = 298.16 K
K
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.25
°C/W
0.6
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
V
150
125
100
4.7
°C
-40
Operating Case Temperature
-40
Torque Mounting torque
Wt
To heatsink
M5
N.m
g
Package Weight
160
Package outline
3 - 5
APT website – http://www.advancedpower.com
APTGF75H120T
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
150
125
100
75
150
125
100
75
TJ = 125°C
VGE=15V
VGE=20V
TJ=25°C
VGE=12V
VGE=9V
50
50
TJ=125°C
25
25
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
150
125
100
75
28
24
20
16
12
8
VCE = 600V
VGE = 15V
RG = 7.5 Ω
TJ = 125°C
Eon
TJ=125°C
TJ=25°C
50
25
Eoff
4
0
0
0
25
50
75
100
125
150
5
6
7
8
9
10
11
12
I
C (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
35
Reverse Bias Safe Operating Area
175
VCE = 600V
VGE =15V
30
150
125
100
75
IC = 75A
TJ = 125°C
25
Eon
20
15
VGE=15V
TJ=125°C
RG=7.5 Ω
50
10
Eoff
25
5
0
0
0
300
600
900
CE (V)
1200
1500
0
10
20
30
40
50
60
70
Gate Resistance (ohms)
V
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.3
IGBT
0.25
0.2
0.9
0.7
0.15
0.1
0.5
0.3
0.05
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
APT website – http://www.advancedpower.com
APTGF75H120T
Operating Frequency vs Collector Current
Forward Characteristic of diode
100
90
80
70
60
50
40
30
20
10
0
125
100
75
50
25
0
VCE=600V
D=50%
RG=7.5 Ω
TJ=125°C
TC=75°C
ZCS
TJ=125°C
ZVS
hard
switching
TJ=25°C
0
0.5
1
1.5
VF (V)
2
2.5
3
0
20
40
C (A)
60
80
100
I
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Diode
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
APT website – http://www.advancedpower.com
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