APTGT150DA120G [MICROSEMI]
Boost chopper Fast Trench + Field Stop IGBT Power Module; 升压斩波快速沟道+场截止IGBT功率模块
| 型号： | APTGT150DA120G |
| 厂家： | 
Microsemi |
| 描述： | Boost chopper Fast Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT150DA120G
Boost chopper
Fast Trench + Field Stop IGBT®
VCES = 1200V
IC = 150A @ Tc = 80°C
Application
VBUS
•
•
•
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
CR1
Features
•
Fast Trench + Field Stop IGBT® Technology
OUT
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Q2
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
G2
Low leakage current
E2
Avalanche energy rated
RBSOA and SCSOA rated
0/VBUS
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
Benefits
VBUS
0/VBUS
OUT
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
E2
G2
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
220
150
350
±20
690
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 300A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 5
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APTGT150DA120G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
350
2.1
µA
Tj = 25°C
Tj = 125°C
1.7
2.0
5.8
VGE = 15V
VCE(sat) Collector Emitter Saturation Voltage
V
IC = 150A
VGE(th) Gate Threshold Voltage
IGES
VGE = VCE , IC = 3 mA
VGE = 20V, VCE = 0V
5.0
6.5
400
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
10.7
nF
Output Capacitance
0.56
0.48
280
40
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 600V
420
IC = 150A
75
RG = 2.2Ω
Inductive Switching (125°C)
VGE = ±15V
290
45
520
ns
VBus = 600V
IC = 150A
Tf
Fall Time
90
RG = 2.2Ω
VGE = ±15V
Tj = 125°C
VBus = 600V
Eon
Turn-on Switching Energy
14
16
mJ
IC = 150A
Tj = 125°C
RG = 2.2Ω
Eoff
Turn-off Switching Energy
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
1200
V
Tj = 25°C
VR=1200V
250
600
IRM
µA
Tj = 125°C
IF
DC Forward Current
Tc = 80°C
150
1.6
1.6
170
280
14
28
6
11
A
V
Tj = 25°C
2.1
VF
Diode Forward Voltage
IF = 150A
Tj = 125°C
Tj = 25°C
Tj = 125°C
trr
Reverse Recovery Time
ns
IF = 150A
Tj = 25°C
VR = 600V
Qrr
Er
Reverse Recovery Charge
Reverse Recovery Energy
µC
mJ
Tj = 125°C
Tj = 25°C
Tj = 125°C
di/dt =2500A/µs
2 - 5
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APTGT150DA120G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.18
0.30
RthJC
Junction to Case Thermal Resistance
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-40
-40
-40
3
Operating junction temperature range
150
125
100
5
3.5
280
°C
Storage Temperature Range
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
Wt Package Weight
N.m
g
2
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTGT150DA120G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
300
300
250
200
150
100
50
TJ = 125°C
250
200
150
100
50
TJ=25°C
VGE=17V
VGE=13V
TJ=125°C
VGE=15V
VGE=9V
0
0
0
1
2
VCE (V)
3
4
0
1
2
3
4
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
300
250
200
150
100
50
32
28
24
20
16
12
8
VCE = 600V
VGE = 15V
RG = 2.2Ω
TJ = 125°C
TJ=25°C
TJ=125°C
Eoff
Eon
Er
TJ=125°C
4
0
0
0
50
100
150
200
250
300
5
6
7
8
9
10
11
12
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
34
350
300
250
200
150
100
50
VCE = 600V
30
26
22
18
14
10
6
Eon
VGE =15V
IC = 150A
TJ = 125°C
Eoff
Er
VGE=15V
TJ=125°C
RG=2.2Ω
Eon
6
2
0
0
2
4
8
10 12 14 16 18
0
400
800
VCE (V)
1200
1600
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
IGBT
0.9
0.16
0.12
0.08
0.04
0
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
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APTGT150DA120G
Operating Frequency vs Collector Current
Forward Characteristic of diode
300
60
50
40
30
20
10
0
VCE=600V
D=50%
TJ=25°C
250
200
150
100
50
RG=2.2Ω
TJ=125°C
ZVS
Tc=75°C
TJ=125°C
ZCS
TJ=125°C
Hard
switching
0
0
0.4
0.8
1.2
F (V)
1.6
2
2.4
0
40
80
120
C (A)
160
200
240
V
I
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
Diode
0.25
0.2
0.7
0.5
0.3
0.15
0.1
0.1
0.05
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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