APTGT200DU120G [MICROSEMI]
Dual common source Fast Trench + Field Stop IGBT Power Module; 双共源快速沟道+场截止IGBT功率模块
| 型号： | APTGT200DU120G |
| 厂家： | 
Microsemi |
| 描述： | Dual common source Fast Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT200DU120G
Dual common source
Fast Trench + Field Stop IGBT®
Power Module
VCES = 1200V
IC = 200A @ Tc = 80°C
Application
•
•
•
AC Switches
C1
C2
Switched Mode Power Supplies
Uninterruptible Power Supplies
Q1
Q2
G1
E1
G2
E2
Features
•
Fast Trench + Field Stop IGBT® Technology
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-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
E
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
G1
E1
C1
E
C2
Benefits
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
E2
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
G2
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
280
200
400
±20
890
V
TC = 25°C
IC
Continuous Collector Current
A
TC = 80°C
TC = 25°C
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 400A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 5
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APTGT200DU120G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
350
2.1
µA
Tj = 25°C
Tj = 125°C
1.4
5.0
1.7
2.0
5.8
VGE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 200A
VGE = VCE , IC = 3 mA
6.5
500
V
nA
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
14
nF
Output Capacitance
0.8
0.6
260
30
420
70
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 600V
IC = 200A
RG = 2.7Ω
Inductive Switching (125°C)
VGE = ±15V
290
50
520
ns
VBus = 600V
IC = 200A
Tf
Fall Time
90
RG = 2.7Ω
VGE = ±15V
Tj = 125°C
VBus = 600V
Eon
Turn on Energy
20
20
mJ
IC = 200A
Tj = 125°C
RG = 2.7Ω
Eoff
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
VR=1200V
350
600
IRM
Maximum Reverse Leakage Current
µA
Tj = 125°C
IF
DC Forward Current
Tc = 80°C
200
1.6
1.6
A
V
IF = 200A
VGE = 0V
Tj = 25°C
2.1
VF
Diode Forward Voltage
Tj = 125°C
Tj = 25°C
170
trr
Reverse Recovery Time
ns
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
280
18
36
10
18
IF = 200A
VR = 600V
di/dt =2500A/µs
Qrr
Er
Reverse Recovery Charge
Reverse Recovery Energy
µC
mJ
2 - 5
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APTGT200DU120G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.14
0.25
RthJC
Junction to Case Thermal Resistance
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
150
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTGT200DU120G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
400
300
200
100
0
400
TJ = 125°C
TJ=25°C
VGE=17V
VGE=13V
VGE=15V
TJ=125°C
300
200
100
0
VGE=9V
0
1
2
3
4
0
1
2
VCE (V)
3
4
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
50
40
30
20
10
0
400
350
300
250
200
150
100
50
VCE = 600V
VGE = 15V
Eon
Eoff
TJ=25°C
R
G = 2.7Ω
TJ=125°C
TJ = 125°C
Er
Eon
TJ=125°C
0
0
50 100 150 200 250 300 350 400
C (A)
5
6
7
8
9
10
11
12
I
V
GE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
50
450
400
350
300
250
200
150
100
50
VCE = 600V
GE =15V
IC = 200A
Eon
V
40
30
20
10
0
TJ = 125°C
Eoff
Er
VGE=15V
TJ=125°C
RG=2.7 Ω
0
0
4
8
12
16
20
0
300
600
900
1200
1500
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.14
0.12
0.1
IGBT
0.9
0.7
0.5
0.3
0.1
0.08
0.06
0.04
0.02
0
Single Pulse
0.01
0.05
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
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APTGT200DU120G
Operating Frequency vs Collector Current
Forward Characteristic of diode
60
50
40
30
20
10
0
400
VCE=600V
D=50%
RG=2.7Ω
TJ=125°C
Tc=75°C
TJ=25°C
350
300
250
200
150
100
50
ZVS
ZCS
TJ=125°C
TJ=125°C
Hard
switching
0
0
0.4
0.8
1.2
VF (V)
1.6
2
2.4
0
40
80 120 160 200 240 280
C (A)
I
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
0.25
0.2
0.9
0.7
Diode
0.15
0.1
0.5
0.3
0.1
0.05
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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