APTGT20TL601G [MICROSEMI]

Three level inverter Trench + Field Stop IGBT Power Module; 三电平逆变器沟道+场截止IGBT功率模块
APTGT20TL601G
元器件型号: APTGT20TL601G
生产厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用:

Three level inverter Trench + Field Stop IGBT Power Module
三电平逆变器沟道+场截止IGBT功率模块

晶体 晶体管 功率控制 双极性晶体管 栅 局域网
PDF文件: 总6页 (文件大小:217K)
下载文档:  下载PDF数据表文档文件
型号参数:APTGT20TL601G参数

APTGT20TL60T3G

Three level inverter Trench + Field Stop IGBT Power Module

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7 MICROSEMI

APTGT20TL60T3G

Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN

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0 MICROSEMI

APTGT20X60T3G

3 Phase bridge Trench + Field Stop IGBT® Power Module

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11 MICROSEMI

APTGT225A170

Phase leg Trench + Field Stop IGBT Power Module

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9 ADPOW

APTGT225A170G

Phase leg Trench + Field Stop IGBT Power Module

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6 MICROSEMI

APTGT225DA170

Boost chopper Trench + Field Stop IGBT Power Module

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3 ADPOW

APTGT225DA170G

Boost chopper Trench + Field Stop IGBT Power Module

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10 MICROSEMI

APTGT225DU170

Dual common source Trench + Field Stop IGBT Power Module

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7 ADPOW

APTGT225DU170G

Dual common source Trench + Field Stop IGBT Power Module

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11 MICROSEMI

APTGT225SK170

Buck chopper Trench + Field Stop IGBT Power Module

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7 ADPOW

APTGT225SK170G

Buck chopper Trench + Field Stop IGBT Power Module

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7 MICROSEMI

APTGT25A120D1

Phase leg Trench IGBT Power Module

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12 ADPOW

APTGT25A120D1

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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0 MICROSEMI

APTGT25A120D1G

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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0 MICROSEMI

APTGT25A120T1G

Phase leg Fast Trench + Field Stop IGBT® Power Module

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8 MICROSEMI