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APTGT600A60G_07 [MICROSEMI]

Phase leg Trench + Field Stop IGBT Power Module; 相脚沟道+场截止IGBT功率模块
APTGT600A60G_07
型号： APTGT600A60G_07
厂家： Microsemi    Microsemi
描述：

Phase leg Trench + Field Stop IGBT Power Module
相脚沟道+场截止IGBT功率模块

双极性晶体管
文件： 总5页 (文件大小：136K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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APTGT600A60G  
Phase leg  
Trench + Field Stop IGBT®  
Power Module  
VCES = 600V  
IC = 600A* @ Tc = 80°C  
Application  
•
•
•
•
Welding converters  
VBUS  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Q1  
G1  
E1  
Features  
OUT  
•
Trench + Field Stop IGBT® Technology  
-
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
Q2  
G2  
E2  
0/VBUS  
•
•
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
M5 power connectors  
•
High level of integration  
G1  
E1  
VBUS  
0/VBUS  
OUT  
Benefits  
•
•
•
•
•
•
•
Stable temperature behavior  
Very rugged  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
E2  
G2  
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
600  
700 *  
600 *  
800  
±20  
2300  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 150°C 1200A @ 550V  
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater  
than 100°C for the connectors.  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 5  
www.microsemi.com  
APTGT600A60G  
All ratings @ Tj = 25°C unless otherwise specified  
Electrical Characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
ICES  
Zero Gate Voltage Collector Current  
VGE = 0V, VCE = 600V  
750  
1.8  
µA  
Tj = 25°C  
1.4  
1.5  
5.8  
V
GE =15V  
VCE(sat) Collector Emitter Saturation Voltage  
VGE(th) Gate Threshold Voltage  
V
IC = 600A  
Tj = 150°C  
VGE = VCE , IC = 2mA  
VGE = 20V, VCE = 0V  
5.0  
6.5  
800  
V
nA  
IGES  
Gate – Emitter Leakage Current  
Dynamic Characteristics  
Symbol Characteristic  
Test Conditions  
VGE = 0V  
VCE = 25V  
f = 1MHz  
Min Typ Max Unit  
Cies  
Coes  
Cres  
Td(on)  
Tr  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
49  
nF  
3.1  
1.5  
130  
55  
Inductive Switching (25°C)  
V
GE = ±15V  
ns  
VBus = 300V  
IC = 600A  
RG = 1Ω  
Td(off) Turn-off Delay Time  
250  
60  
Tf  
Fall Time  
Inductive Switching (150°C)  
Td(on)  
Tr  
Turn-on Delay Time  
Rise Time  
145  
60  
320  
80  
3
V
GE = ±15V  
ns  
VBus = 300V  
IC = 600A  
RG = 1Ω  
Td(off) Turn-off Delay Time  
Tf  
Fall Time  
Tj = 25°C  
Tj = 150°C  
Tj = 25°C  
Tj = 150°C  
V
V
GE = ±15V  
Bus = 300V  
Eon  
Turn on Energy  
mJ  
mJ  
5.5  
17  
21  
IC = 600A  
RG = 1Ω  
Eoff  
Turn off Energy  
Reverse diode ratings and characteristics  
Symbol Characteristic  
Test Conditions  
VR=600V  
Min Typ Max Unit  
Maximum Peak Repetitive Reverse Voltage  
Maximum Reverse Leakage Current  
DC Forward Current  
VRRM  
IRM  
IF  
600  
V
µA  
A
Tj = 25°C  
Tj = 150°C  
Tc = 80°C  
Tj = 25°C  
Tj = 150°C  
350  
550  
600  
1.5  
IF = 600A  
1.9  
VF  
Diode Forward Voltage  
V
V
GE = 0V  
1.4  
Tj = 25°C  
Tj = 150°C  
Tj = 25°C  
Tj = 150°C  
Tj = 25°C  
Tj = 150°C  
120  
trr  
Qrr  
Er  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Energy  
ns  
µC  
mJ  
210  
27  
IF = 600A  
VR = 300V  
di/dt =5000A/µs  
57  
6.9  
14.1  
2 - 5  
www.microsemi.com  
APTGT600A60G  
Thermal and package characteristics  
Symbol Characteristic  
Min Typ Max Unit  
IGBT  
Diode  
0.065  
0.11  
RthJC  
Junction to Case Thermal Resistance  
°C/W  
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz  
Operating junction temperature range  
Storage Temperature Range  
VISOL  
TJ  
TSTG  
TC  
2500  
-40  
-40  
-40  
3
175  
125  
100  
5
3.5  
280  
°C  
Operating Case Temperature  
To heatsink  
For terminals  
M6  
M5  
Torque Mounting torque  
N.m  
g
2
Wt  
Package Weight  
SP6 Package outline (dimensions in mm)  
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com  
3 - 5  
www.microsemi.com  
APTGT600A60G  
Typical Performance Curve  
Output Characteristics (VGE=15V)  
Output Characteristics  
1200  
1000  
800  
600  
400  
200  
0
1200  
1000  
800  
600  
400  
200  
0
TJ = 150°C  
TJ=25°C  
VGE=13V  
VGE=19V  
TJ=125°C  
TJ=150°C  
VGE=15V  
VGE=9V  
TJ=25°C  
1.5  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
0.5  
1
2
2.5  
VCE (V)  
VCE (V)  
Energy losses vs Collector Current  
Transfert Characteristics  
1200  
1000  
800  
600  
400  
200  
0
40  
35  
30  
25  
20  
15  
10  
5
Eoff  
TJ=25°C  
VCE = 300V  
GE = 15V  
G = 1Ω  
TJ = 150°C  
V
R
Er  
TJ=125°C  
TJ=150°C  
Eon  
TJ=25°C  
0
0
200 400 600 800 1000 1200  
C (A)  
5
6
7
8
9
10  
11  
I
V
GE (V)  
Switching Energy Losses vs Gate Resistance  
Reverse Bias Safe Operating Area  
40  
1400  
1200  
1000  
800  
600  
400  
200  
0
VCE = 300V  
Eoff  
V
GE =15V  
IC = 600A  
Eon  
30  
20  
10  
0
TJ = 150°C  
VGE=15V  
TJ=150°C  
RG=1Ω  
Er  
Eon  
2
0
1
3
4
5
6
0
100 200 300 400 500 600 700  
VCE (V)  
Gate Resistance (ohms)  
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration  
0.9  
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0
IGBT  
0.7  
0.5  
0.3  
0.1  
Single Pulse  
0.05  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Rectangular Pulse Duration in Seconds  
4 - 5  
www.microsemi.com  
APTGT600A60G  
Operating Frequency vs Collector Current  
Forward Characteristic of diode  
1200  
1000  
800  
600  
400  
200  
0
120  
100  
80  
60  
40  
20  
0
VCE=300V  
D=50%  
RG=1Ω  
ZVS  
TJ=150°C  
Tc=85°C  
ZCS  
TJ=125°C  
TJ=150°C  
TJ=25°C  
Hard  
switching  
0
0.4  
0.8  
1.2  
F (V)  
1.6  
2
0
200  
400  
600  
C (A)  
800  
1000  
V
I
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration  
0.12  
0.1  
Diode  
0.9  
0.7  
0.08  
0.06  
0.04  
0.02  
0
0.5  
0.3  
0.1  
Single Pulse  
0.05  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Rectangular Pulse Duration in Seconds  
Microsemi reserves the right to change, without notice, the specifications and information contained herein  
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522  
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.  
5 - 5  
www.microsemi.com  

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