APTGT75SK120T1G [MICROSEMI]
Buck chopper Fast Trench + Field Stop IGBT® Power Module; 降压斩波快速沟道+场站IGBT®电源模块
| 型号： | APTGT75SK120T1G |
| 厂家： | 
Microsemi |
| 描述： | Buck chopper Fast Trench + Field Stop IGBT® Power Module |
| 文件： | 总5页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT75SK120T1G
Buck chopper
Fast Trench + Field Stop IGBT®
Power Module
VCES = 1200V
IC = 75A @ Tc = 80°C
Application
5
6
11
•
•
AC and DC motor control
Switched Mode Power Supplies
Q1
CR1
Features
7
8
•
Fast Trench + Field Stop IGBT® Technology
3
4
-
-
-
-
-
-
-
Low voltage drop
NTC
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
CR2
1
Low leakage current
RBSOA and SCSOA rated
•
•
•
Very low stray inductance
2
12
Internal thermistor for temperature monitoring
High level of integration
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
•
•
Low profile
RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
1200
110
Unit
VCES
Collector - Emitter Breakdown Voltage
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
75
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
175
±20
V
W
TC = 25°C
Tj = 125°C
357
RBSOA Reverse Bias Safe Operating Area
150A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 – 5
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APTGT75SK120T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
250
2.1
µA
Tj = 25°C
Tj = 125°C
1.4
5.0
1.7
2.0
VGE =15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 75A
VGE = VCE , IC = 3 mA
VGE = 20V, VCE = 0V
6.5
400
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
5340
VGE = 0V
V
CE = 25V
pF
280
240
260
30
420
70
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
ns
V
Bus = 600V
Td(off) Turn-off Delay Time
IC = 75A
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
RG = 4.7Ω
Inductive Switching (125°C)
285
50
520
90
V
GE = ±15V
ns
VBus = 600V
IC = 75A
Td(off) Turn-off Delay Time
Tf
Fall Time
RG = 4.7Ω
VGE = ±15V
Eon
Turn-on Switching Energy
Tj = 125°C
Tj = 125°C
7
V
Bus = 600V
mJ
IC = 75A
Eoff
Turn-off Switching Energy
8.1
RG = 4.7Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
VRRM
1200
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
250
500
IRM
Maximum Reverse Leakage Current
VR=1200V
µA
IF
DC Forward Current
100
1.6
1.6
A
V
2.1
VF
Diode Forward Voltage
IF = 100A
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
170
280
9
18
5
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 100A
VR = 600V
di/dt =2000A/µs
9
2 – 5
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APTGT75SK120T1G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.35
0.48
°C/W
V
RthJC
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
-40
-40
2.5
150
125
100
4.7
80
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
To heatsink
M4
N.m
g
Wt
Package Weight
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B 25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/ 85
exp B
−
T25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
3 – 5
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APTGT75SK120T1G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
150
150
125
100
75
TJ = 125°C
125
TJ=25°C
VGE=17V
VGE=13V
TJ=125°C
100
75
50
25
0
VGE=15V
VGE=9V
50
25
0
0
1
2
VCE (V)
3
4
0
1
2
3
4
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
150
125
100
75
16
14
12
10
8
VCE = 600V
TJ=25°C
V
GE = 15V
RG = 4.7Ω
TJ = 125°C
Eon
Er
TJ=125°C
Eoff
6
50
TJ=125°C
4
Er
25
2
0
0
0
25
50
75
100
125
150
5
6
7
8
9
10
11
12
I
C (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
16
175
150
125
100
75
Eon
14
12
Eoff
10
8
Eoff
VGE=15V
TJ=125°C
RG=4.7Ω
6
VCE = 600V
VGE =15V
Er
50
4
IC = 75A
25
2
TJ = 125°C
0
0
0
4
8
12 16 20 24 28 32
0
400
800
VCE (V)
1200
1600
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
IGBT
0.35
0.3
0.9
0.7
0.25
0.2
0.5
0.3
0.15
0.1
0.1
0.05
0
0.00001
Single Pulse
0.01
0.05
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
4 – 5
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APTGT75SK120T1G
Operating Frequency vs Collector Current
Forward Characteristic of diode
200
60
50
40
30
20
10
0
VCE=600V
D=50%
175
150
125
100
75
TJ=25°C
RG=4.7Ω
TJ=125°C
ZVS
Tc=75°C
TJ=125°C
ZCS
50
TJ=125°C
Hard
switching
25
0
0
0.4
0.8
1.2
VF (V)
1.6
2
2.4
0
20
40
60
IC (A)
80
100
120
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.4
0.3
0.2
0.1
0
0.9
Diode
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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