APTLGF350A608G [MICROSEMI]
Phase leg Intelligent Power Module; 相桥臂智能功率模块
| 型号： | APTLGF350A608G |
| 厂家： | 
Microsemi |
| 描述： | Phase leg Intelligent Power Module |
| 文件： | 总7页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTLGF350A608G
VCES = 600V
IC = 350A @ Tc = 80°C
Phase leg
Intelligent Power Module
Application
•
•
•
•
Motor control
Uninterruptible Power Supplies
Switched Mode Power Supplies
Amplifier
Features
• Non Punch Through (NPT) FAST IGBT
-
-
-
-
-
-
Low voltage drop
Low tail current
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA & SCSOA rated
• Integrated Fail Safe IGBT Protection (Driver)
-
-
Top Bottom input signals Interlock
Isolated DC/DC Converter
• Low stray inductance
• M5 power connectors
• High level of integration
Benefits
VBUS
0/VBUS
OUT
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Very high noise immunity
(common mode rejection > 25kV/µs)
• Galvanic Isolation: 3750V for the optocoupler
2500V for the transformer
• 5V logic level with Schmitt-trigger Input
• Single VDD=5V supply required
• Secondary auxiliary power supplies internally generated
(15V, -6V)
• Optocoupler qualified to AEC-Q100 test quidelines
• RoHS compliant
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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APTLGF350A608G
All ratings @ Tj = 25°C unless otherwise specified
1. Inverter Power Module
Absolute maximum ratings
Symbol
Parameter
Max ratings
600
Unit
V
VCES
Collector - Emitter Breakdown Voltage
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
430
350
700
1562
IC
Continuous Collector Current
A
ICM
PD
Pulsed Collector Current
Maximum Power Dissipation
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
800A@550V
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
0.5
V
GE = 0V
ICES
Zero Gate Voltage Collector Current
mA
VCE = 600V
1.5
2
2.5
VDD = VIN = 5V
IC = 400A
VCE(sat) Collector Emitter Saturation Voltage
V
Tj = 125°C
2.2
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
17.2
1.88
1.6
V
GE = 0V
VCE = 25V
nF
ns
f = 1MHz
Inductive Switching (25°C)
Tr
Tf
Rise Time
Fall Time
25
30
VDD = VIN = 5V
VBus = 400V ; IC = 400A
Inductive Switching (125°C)
Tr
Tf
Rise Time
25
45
ns
V
V
DD = VIN = 5V
Bus = 400V
Fall Time
Eon
Turn-on Switching Energy
17.2
IC = 400A
mJ
Eoff
Turn-off Switching Energy
14
V
DD = VIN = 5V; VBus =360V
Isc
Short Circuit data
1800
A
tp ≤ 10µs ; Tj = 125°C
RthJC
Junction to Case thermal resistance
0.08 °C/W
2 - 7
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APTLGF350A608G
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
IRM
IF
600
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 80°C
100
VR=600V
2000
240
1.7
2
IF = 240A
IF = 480A
IF = 240A
2.3
VF
trr
Diode Forward Voltage
Reverse Recovery Time
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
1.4
70
140
400
ns
IF = 240A
VR = 400V
di/dt = 800A/µs
Qrr
Reverse Recovery Charge
nC
Tj = 125°C
2760
RthJC
Junction to Case Thermal Resistance
0.22 °C/W
2. Driver
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDD
VINi
Supply Voltage
Input signal voltage i=L, H
5.5
5.5
0.35
2
V
VINi = 0V, i =L & H
VDD=5V, VINH = /VINL ; Fout = 60kHz
IVDDmax
fmax
Maximum Supply current
A
kHz
Maximum Switching Frequency
60
Driver Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
4.5
Typ
5
Max
5.5
5.5
Unit
V
VDD
Operating Supply Voltage
Maximum Input Voltage
Positive Going Threshold Voltage
VINi(max)
VINi (th+)
-0.5
5
V
3.2
i = L, H
VINi(th-) Negative Going Threshold Voltage
1
1
RINi
Td(on)
DT
Input Resistance *
Turn On delay time
Built in dead time
kΩ
Driver + IGBT
Driver + IGBT
1100n
600
750
ns
Td(off)
PWD
Turn Off delay time
Pulse Width Distortion
Propagation Delay Difference
between any two driver
300
350
ns
PDD
VISOL
Td(on) - Td(off)
-350
2500
Primary to Secondary Isolation
VRMS
* Low impedance guarantees good noise immunity.
n Including built in dead time.
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APTLGF350A608G
3. Package characteristics
Symbol Characteristic
Min Typ Max Unit
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
VISOL
TJ
TOP
TSTG
TC
2500
-40
-40
-40
-40
2
V
Operating junction temperature range
Operating Ambient Temperature
Storage Temperature Range
150
85
100
100
4.7
4
°C
Operating Case Temperature
To heatsink
For terminals
M5
M5
Torque Mounting torque
Wt Package Weight
N.m
g
2
550
4. LP8 Package outline (dimensions in mm)
4 - 7
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APTLGF350A608G
Typical IGBT Performance Curve
Breakdown Voltage vs Junction Temp.
Output characteristics
800
1.20
250µs Pulse Test
< 0.5% Duty cycle
600
1.10
1.00
0.90
0.80
TJ=25°C
TJ=125°C
400
200
0
VDD = 5V
VIN = 5V
25
50
75
100
125
0
1
2
3
4
TJ, Junction Temperature (°C)
VCE, Collector to Emitter Voltage (V)
Reverse Bias Safe Operating Area
DC Collector Current vs Case Temperature
1000
800
600
400
200
0
500
400
300
200
100
0
0
100
200
300
400
500
600
25
50
75
100
125
150
VCE, Collector to Emitter Voltage (V)
TC, Case Temperature (°C)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
80
60
40
20
0
80
60
40
20
0
VCE = 400V
VDD = 5V
VCE = 400V
VDD = 5V
V
IN = 5V
VIN = 5V
TJ=125°C
TJ = 125°C
TJ = 25°C
100
200
300
400
500
600
100
200
300
400
500
600
I
CE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
32
Turn-Off Energy Loss vs Collector Current
24
20
16
12
8
VCE = 400V
VCE = 400V
DD = 5V
VIN = 5V
TJ = 125°C
VDD = 5V
IN = 5V
TJ=125°C
V
V
24
16
8
TJ = 25°C
TJ=25°C
4
0
0
100
200
300
400
500
600
100
200
300
400
500
600
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
5 - 7
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APTLGF350A608G
Capacitance vs Collector to Emitter Voltage
100000
Operating Frequency vs Collector Current
70
60
50
40
30
20
10
0
VCE = 400V
D = 50%
VDD = 5V
VIN = 5V
Cies
10000
1000
100
TJ = 125°C
Limited by
internal gate
drive power
dissipation
TC =75°C
Coes
Cres
Hard
switching
0
100
200
300
400
500
0
10
20
30
40
50
V
CE, Collector to Emitter Voltage (V)
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.1
0.08
0.06
0.04
0.02
0
0.9
0.7
0.5
0.3
Single Pulse
0.1
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
6 - 7
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APTLGF350A608G
Typical diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
0.9
0.7
0.5
0.2
0.15
0.1
0.3
0.05
0.1
Single Pulse
0.01
0.05
0
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
175
150
125
100
75
500
TJ=125°C
VR=400V
480 A
400
300
200
100
0
TJ=125°C
120 A
240 A
TJ=25°C
50
0.0
0.5
1.0
1.5
2.0
2.5
0
800 1600 2400 3200 4000 4800
-diF/dt (A/µs)
VF, Anode to Cathode Voltage (V)
QRR vs. Current Rate Charge
IRRM vs. Current Rate of Charge
8.0
6.0
4.0
2.0
0.0
160
140
120
100
80
TJ=125°C
480 A
VR=400V
TJ=125°C
480 A
VR=400V
240 A
240 A
120 A
60
40
20
120 A
0
0
800 1600 2400 3200 4000 4800
0
800 1600 2400 3200 4000 4800
-diF/dt (A/µs)
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
2000
1600
1200
800
400
0
1
10
100
1000
VR, Reverse Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
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