APTM120DA29TG [MICROSEMI]
Boost chopper MOSFET Power Module; 升压斩波MOSFET功率模块
| 型号： | APTM120DA29TG |
| 厂家： | 
Microsemi |
| 描述： | Boost chopper MOSFET Power Module |
| 文件： | 总6页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM120DA29TG
VDSS = 1200V
RDSon = 290mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 34A @ Tc = 25°C
Application
NTC2
VBUS
VBUS SENSE
•
•
•
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
CR1
Features
•
Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
OUT
Q2
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
G2
S2
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
0/VBUS
NTC1
Lead frames for power connections
•
•
Internal thermistor for temperature monitoring
High level of integration
Benefits
G2
S2
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
OUT
OUT
VBUS
0/VBUS
S2
G2
NTC2
NTC1
•
•
Low profile
VBUS
SENSE
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
34
25
136
±30
348
780
ID
Continuous Drain Current
A
Tc = 80°C
IDM
VGS
RDSon
PD
Pulsed Drain current
Gate - Source Voltage
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
Tc = 25°C
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
22
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1 – 6
APTM120DA29TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 1200V
VGS = 0V,VDS = 1000V Tj = 125°C
VGS = 10V, ID = 17A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
Tj = 25°C
350
1500
348
5
±150
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
290
mΩ
V
nA
3
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
10.3
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
1.54
0.26
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
374
48
240
20
15
160
45
VGS = 10V
VBus = 600V
ID = 34A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ns
ID = 34A
RG = 2.5Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 34A, RG = 2.5Ω
Eon
Turn-on Switching Energy
1980
1371
3131
1714
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 34A, RG = 2.5Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
1200
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 70°C
250
500
Maximum Reverse Leakage Current
DC Forward Current
VR=1200V
60
2
2.3
1.8
IF = 60A
IF = 120A
IF = 60A
2.5
VF
Diode Forward Voltage
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
400
470
1200
4000
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 60A
VR = 800V
di/dt = 200A/µs
Qrr
nC
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2 – 6
APTM120DA29TG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.16
0.9
RthJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
2.5
150
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
Wt
To Heatsink
M5
N.m
g
Package Weight
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
SP4 Package outline (dimensions in mm)
ALL DIMENSIONSMARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
www.microsemi.com
3 – 6
APTM120DA29TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.9
0.7
0.5
0.3
Single Pulse
0.1
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
100
80
60
40
20
0
160
140
120
100
80
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15, 10 & 8V
7V
6.5V
6V
60
TJ=25°C
40
5.5V
5V
20
TJ=125°C
TJ=-55°C
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
VDS, Drain to Source Voltage (V)
V
GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
1.2
1.1
1
40
30
20
10
0
Normalized to
GS=10V @ 17A
V
VGS=10V
VGS=20V
0.9
0.8
0
20
40
60
80
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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4 – 6
APTM120DA29TG
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
VGS=10V
ID=17A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
limited by RDSon
1ms
10ms
Single pulse
TJ=150°C
TC=25°C
1
1200
1000
-50 -25
0
25 50 75 100 125 150
1
10
100
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
12
10
8
ID=34A
TJ=25°C
VDS=240V
Ciss
VDS=600V
VDS=960V
10000
1000
100
Coss
6
4
Crss
2
0
0
80
160 240 320 400 480
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5 – 6
APTM120DA29TG
Delay Times vs Current
td(off)
Rise and Fall times vs Current
80
60
40
20
0
180
150
120
90
VDS=800V
tf
RG=2.5Ω
TJ=125°C
L=100µH
VDS=800V
RG=2.5Ω
TJ=125°C
L=100µH
tr
60
td(on)
30
0
10
20
30
40
50
60
70
10
20
30
40
50
60
70
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
7
6
5
4
3
2
1
6
5
4
3
2
1
0
VDS=800V
ID=34A
TJ=125°C
L=100µH
VDS=800V
RG=2.5Ω
Eon
Eoff
Eon
TJ=125°C
L=100µH
Eoff
Eoff
10
20
30
40
50
60
70
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
225
200
175
150
125
100
75
50
25
0
ZCS
TJ=150°C
ZVS
TJ=25°C
VDS=800V
D=50%
RG=2.5Ω
TJ=125°C
TC=75°C
Hard
switching
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
8
12
16
20
24
28
32
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6 – 6
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