APTM20DUM10TG [MICROSEMI]
Dual common source MOSFET Power Module; 双共源MOSFET功率模块
| 型号： | APTM20DUM10TG |
| 厂家： | 
Microsemi |
| 描述： | Dual common source MOSFET Power Module |
| 文件： | 总6页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM20DUM10TG
VDSS = 200V
Dual common source
RDSon = 10mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 175A @ Tc = 25°C
Application
•
•
•
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
D1
D2
Q1
Q2
Features
•
Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
G1
G2
Low input and Miller capacitance
Low gate charge
S1
S2
Avalanche energy rated
Very rugged
S
NTC1
NT C2
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
•
•
Internal thermistor for temperature monitoring
High level of integration
G2
S2
D2
D2
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
D1
S
S1
G1
S2
G2
NTC2
NTC1
•
•
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
200
Unit
VDSS
Drain - Source Breakdown Voltage
V
Tc = 25°C
175
ID
Continuous Drain Current
A
Tc = 80°C
131
IDM
VGS
RDSon
PD
Pulsed Drain current
700
Gate - Source Voltage
±30
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
12
Tc = 25°C
694
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
89
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1 – 6
APTM20DUM10TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 200V Tj = 25°C
200
1000
12
5
±150
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 160V Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
VGS = 10V, ID = 87.5A
10
mΩ
V
nA
VGS = VDS, ID = 5mA
3
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
13.7
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
4.36
0.19
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
224
86
94
28
56
81
99
VGS = 10V
VBus = 100V
ID = 150A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ns
ID = 150A
RG = 2.5Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 150A, RG = 2.5Ω
Eon
Turn-on Switching Energy
926
910
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 150A, RG = 2.5Ω
1216
1062
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Continuous Source current
Tc = 25°C
Tc = 80°C
175
IS
A
(Body diode)
131
1.3
5
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery X
VGS = 0V, IS = - 150A
V
V/ns
ns
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
284
6.1
IS = - 150A, VR = 133V
diS/dt = 200A/µs
µC
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 175A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
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2 – 6
APTM20DUM10TG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
Junction to Case Thermal Resistance
0.18 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
2.5
V
150
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
SP4 Package outline (dimensions in mm)
ALL DIMENSIONSMARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3 – 6
APTM20DUM10TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
0.18
0.16
0.14
0.12
0.1
0.9
0.7
0.5
0.08
0.06
0.04
0.02
0
0.3
Single Pulse
0.1
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
400
300
200
100
0
500
400
300
200
100
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15&10V
9V
7.5V
7V
6.5V
6V
TJ=25°C
TJ=125°C
5.5V
TJ=-55°C
0
5
10
15
20
25
2
3
V
4
5
6
7
8
9
GS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.2
1.15
1.1
180
160
140
120
100
80
Normalized to
VGS=10V @ 87.5A
VGS=10V
1.05
1
60
40
20
0
VGS=20V
0.95
0.9
0
40
80
120 160 200 240
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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4 – 6
APTM20DUM10TG
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 87.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited by
RDSon
100µs
1ms
10ms
Single pulse
TJ=150°C
TC=25°C
DC line
1
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
TC, Case Temperature (°C)
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
12
VDS=40V
VDS=100V
ID=150A
TJ=25°C
10
8
Ciss
10000
1000
100
VDS=160V
Coss
6
4
2
Crss
0
0
50
100
150
200
250
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5 – 6
APTM20DUM10TG
Delay Times vs Current
Rise and Fall times vs Current
160
90
80
70
60
50
40
30
20
10
VDS=133V
140
120
100
80
RG=2.5Ω
TJ=125°C
L=100µH
tf
td(off)
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
tr
60
40
td(on)
20
0
0
50
100 150 200 250 300
0
50 100 150 200 250 300
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
3
2.5
2
2.5
VDS=133V
ID=150A
TJ=125°C
L=100µH
VDS=133V
RG=2.5Ω
TJ=125°C
Eon
2
1.5
1
Eoff
L=100µH
Eoff
Eon
Eon
1.5
1
0.5
0
0
50
100 150 200 250 300
0
5
10
15
20
ID, Drain Current (A)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
350
300
250
200
150
100
50
1000
100
10
VDS=133V
D=50%
RG=2.5Ω
TJ=125°C
ZVS
TJ=150°C
TC=75°C
TJ=25°C
ZCS
Hard
Switching
1
0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
20 40 60 80 100 120 140 160
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6 – 6
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