APTM50DAM17G [MICROSEMI]
Boost chopper MOSFET Power Module; 升压斩波MOSFET功率模块
| 型号： | APTM50DAM17G |
| 厂家： | 
Microsemi |
| 描述： | Boost chopper MOSFET Power Module |
| 文件： | 总6页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50DAM17G
VDSS = 500V
RDSon = 17mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 180A @ Tc = 25°C
Application
VBUS
CR1
•
AC and DC motor control
•
•
Switched Mode Power Supplies
Power Factor Correction
OUT
Features
Q2
•
Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
G2
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
S2
0/VBUS
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
VBUS
0/VBUS
OUT
Benefits
S2
•
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
G2
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
180
135
720
±30
20
1250
51
50
3000
V
Tc = 25°C
ID
Continuous Drain Current
A
Tc = 80°C
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
V
mΩ
W
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTM50DAM17G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 500V Tj = 25°C
VGS = 0V,VDS = 400V Tj = 125°C
VGS = 10V, ID = 90A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
400
2000
20
5
±200
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
17
mΩ
V
nA
3
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
28
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
5.6
0.36
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
560
160
280
21
38
75
VGS = 10V
VBus = 250V
ID = 180A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ns
ID = 180A
Tf
Fall Time
RG = 0.5Ω
93
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 180A, RG = 0.5Ω
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
4140
3380
6224
4052
µJ
µJ
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 180A, RG = 0.5Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
600
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 70°C
500
Maximum Reverse Leakage Current
DC Forward Current
VR=600V
1000
180
1.6
1.9
1.4
IF = 180A
IF = 360A
IF = 180A
1.8
VF
Diode Forward Voltage
V
Tj = 125°C
Tj = 25°C
130
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 180A
Tj = 125°C
Tj = 25°C
Tj = 125°C
170
660
2760
VR = 400V
di/dt = 600A/µs
Qrr
nC
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2 – 6
APTM50DAM17G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.1
RthJC
Junction to Case Thermal Resistance
°C/W
V
0.32
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
-40
-40
3
150
125
100
5
°C
TSTG
TC
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
3.5
280
Wt
Package Weight
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3 – 6
APTM50DAM17G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.7
0.08
0.06
0.04
0.02
0
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
600
500
400
300
200
100
0
800
600
400
200
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
8V
VGS=10&15V
7V
6.5V
TJ=25°C
6V
TJ=125°C
5.5V
5V
TJ=-55°C
0
2
4
6
8
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
V
GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
180
RDS(on) vs Drain Current
1.1
1.05
1
Normalized to
=10V @ 90A
160
140
120
100
80
60
40
20
0
V
VGS=10V
VGS=20V
0.95
0.9
0
50
100
150
200
250
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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4 – 6
APTM50DAM17G
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID=90A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited by RDSon
100 us
1 ms
100
10
1
Single pulse
TJ=150°C
TC=25°C
10 ms
100 ms
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Gate Charge vs Gate to Source Voltage
Capacitance vs Drain to Source Voltage
14
12
10
8
100000
10000
1000
100
VDS=100V
ID=180A
Ciss
TJ=25°C
VDS=250V
Coss
VDS=400V
6
Crss
4
2
0
10
0
100 200 300 400 500 600 700
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5 – 6
APTM50DAM17G
Delay Times vs Current
Rise and Fall times vs Current
80
70
60
50
40
30
20
10
160
140
120
100
80
VDS=333V
tf
RG=0.5Ω
TJ=125°C
L=100µH
td(off)
VDS=333V
RG=0.5Ω
TJ=125°C
L=100µH
tr
60
td(on)
40
20
0
40
80
120 160 200 240 280
ID, Drain Current (A)
40
80
120 160 200 240 280
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
12
20
VDS=333V
ID=180A
TJ=125°C
L=100µH
VDS=333V
Eoff
Eon
10 RG=0.5Ω
16
12
8
TJ=125°C
L=100µH
8
6
4
2
0
Eon
Eoff
Eoff
4
0
0
2.5
5
7.5
10
12.5
40
80
120 160 200 240 280
ID, Drain Current (A)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
450
400
350
300
250
200
150
100
50
VDS=333V
D=50%
TJ=150°C
RG=0.5Ω
TJ=125°C
TC=75°C
100
10
1
TJ=25°C
ZCS
Hard
switching
ZVS
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
20 40 60 80 100 120 140 160
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相关型号：
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Power Field-Effect Transistor, 51A I(D), 500V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-25
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