APTM50SKM35TG [MICROSEMI]
Buck Chopper MOSFET Power Module; 降压斩波器的MOSFET功率模块
| 型号： | APTM50SKM35TG |
| 厂家： | 
Microsemi |
| 描述： | Buck Chopper MOSFET Power Module |
| 文件： | 总6页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50SKM35TG
VDSS = 500V
RDSon = 35mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 99A @ Tc = 25°C
VBUS
NTC2
Application
Q1
•
•
AC and DC motor control
Switched Mode Power Supplies
G1
S1
Features
•
Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
OUT
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
•
•
Kelvin source for easy drive
Very low stray inductance
0/VBUSSENSE
-
-
Symmetrical design
Lead frames for power connections
0/VBUS
NTC1
•
•
Internal thermistor for temperature monitoring
High level of integration
Benefits
0/VBUS
OUT
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
SENSE
OUT
VBUS
0/VBUS
S1
G1
NTC2
NTC1
0/VBUS
SENSE
•
•
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
Tc = 80°C
99
74
ID
Continuous Drain Current
A
IDM
VGS
RDSon
PD
Pulsed Drain current
396
±30
39
Gate - Source Voltage
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
Tc = 25°C
781
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
51
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1 – 6
APTM50SKM35TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 500V Tj = 25°C
VGS = 0V,VDS = 400V Tj = 125°C
VGS = 10V, ID = 49.5A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
200
1000
39
5
±150
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
35
mΩ
V
nA
3
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
14
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
2.8
0.2
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
280
80
140
21
38
75
VGS = 10V
VBus = 250V
ID = 99A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ns
ID = 99A
RG = 1Ω
Tf
Fall Time
93
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 99A, RG = 1Ω
Eon
Turn-on Switching Energy
2070
1690
3112
2026
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 99A, RG = 1Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
600
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 70°C
350
600
VR=600V
120
1.6
1.9
1.4
IF = 120A
IF = 240A
IF = 120A
1.8
VF
Diode Forward Voltage
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
130
170
440
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 120A
VR = 400V
di/dt = 400A/µs
Qrr
nC
1840
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2 – 6
APTM50SKM35TG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.16
0.46
RthJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
2.5
150
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
Wt
To Heatsink
M5
N.m
g
Package Weight
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
SP4 Package outline (dimensions in mm)
ALL DIMENSIONSMARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3 – 6
APTM50SKM35TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
300
250
200
150
100
50
400
300
200
100
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
8V
VGS=10&15V
7V
6.5V
TJ=25°C
6V
TJ=125°C
5.5V
5V
TJ=-55°C
0
0
2
4
6
8
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
V
GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
100
RDS(on) vs Drain Current
1.1
1.05
1
Normalized to
=10V @ 49.5A
90
80
70
60
50
40
30
20
10
0
V
VGS=10V
VGS=20V
0.95
0.9
0
20
40
60
80
100 120
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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4 – 6
APTM50SKM35TG
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID=49.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100 us
limited by RDSon
1 ms
Single pulse
TJ=150°C
TC=25°C
10 ms
100 ms
1
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Gate Charge vs Gate to Source Voltage
Capacitance vs Drain to Source Voltage
14
12
10
8
100000
10000
1000
100
VDS=100V
ID=99A
Ciss
TJ=25°C
VDS=250V
Coss
VDS=400V
6
Crss
4
2
0
10
0
50 100 150 200 250 300 350
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5 – 6
APTM50SKM35TG
Delay Times vs Current
Rise and Fall times vs Current
80
70
60
50
40
30
20
10
160
VDS=333V
RG=1Ω
TJ=125°C
L=100µH
140
120
100
80
tf
td(off)
VDS=333V
RG=1Ω
TJ=125°C
L=100µH
tr
60
td(on)
40
20
0
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
6
10
VDS=333V
ID=99A
TJ=125°C
L=100µH
VDS=333V
RG=1Ω
TJ=125°C
L=100µH
Eon
Eoff
5
4
3
2
1
0
8
6
4
2
0
Eon
Eoff
Eoff
0
5
10
15
20
25
0
20 40 60 80 100 120 140 160
ID, Drain Current (A)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
Operating Frequency vs Drain Current
450
400
350
300
250
200
150
100
50
VDS=333V
D=50%
RG=1Ω
ZVS
TJ=150°C
100
10
1
TJ=125°C
TC=75°C
TJ=25°C
ZCS
Hard
switching
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
10 20 30 40 50 60 70 80 90
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6 – 6
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