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APTML602U12R020T3AG_10 [MICROSEMI]

Linear MOSFET Power Module; 线性MOSFET功率模块
APTML602U12R020T3AG_10
型号： APTML602U12R020T3AG_10
厂家： Microsemi    Microsemi
描述：

Linear MOSFET Power Module
线性MOSFET功率模块
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中文：  中文翻译
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APTML602U12R020T3AG  
VDSS = 600V  
RDSon = 125mΩ typ @ Tj = 25°C  
ID = 45A* @ Tc = 25°C  
Linear MOSFET  
Power Module  
Application  
•
Electronic load dedicated to power supplies and  
battery discharge testing  
Features  
•
•
•
•
•
Linear MOSFET  
Very low stray inductance  
Internal thermistor for temperature monitoring  
High level of integration  
AlN substrate for improved thermal performance  
Benefits  
•
•
Direct mounting to heatsink (isolated package)  
easy series and parallels combinations for power and  
voltage improvements  
28 27 26 25  
23 22  
20 19 18  
29  
30  
16  
15  
•
•
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
31  
32  
14  
13  
•
•
Low profile  
RoHS Compliant  
2
3
4
7
8
10 11  
12  
Pins 13/14 ; 29/30 ; 31/32 must be shorted together  
Absolute maximum ratings (per leg)  
Symbol  
Parameter  
Max ratings  
600  
Unit  
V
VDSS  
Drain - Source Breakdown Voltage  
Tc = 25°C  
Tc = 80°C  
45*  
33*  
ID  
Continuous Drain Current  
A
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
172  
±30  
150  
V
mΩ  
W
PD  
IAR  
EAR  
EAS  
Maximum Power Dissipation n  
Tc = 25°C  
568  
45  
Avalanche current (repetitive and non repetitive)  
Repetitive Avalanche Energy  
A
50  
mJ  
Single Pulse Avalanche Energy  
3000  
* Output current must be limited to 31A @ TC=25°C and 22A @ TC=80°C to not exceed the shunt specification.  
n In saturation mode  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 – 3  
www.microsemi.com  
APTML602U12R020T3AG  
All ratings @ Tj = 25°C unless otherwise specified  
Electrical Characteristics (per leg)  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
VDS = 600V ; VGS = 0V Tj = 25°C  
25  
µA  
250  
IDSS  
Zero Gate Voltage Drain Current  
VDS = 480V ; VGS = 0V Tj = 125°C  
RDS(on) Drain – Source on Resistance  
VGS(th) Gate Threshold Voltage  
VGS = 10V, ID = 22.5A  
VGS = VDS, ID = 2.5mA  
VGS = ±30 V  
125  
150  
4
±100 nA  
mΩ  
V
2
IGSS  
Gate – Source Leakage Current  
Dynamic Characteristics (per leg)  
Symbol Characteristic  
Test Conditions  
Min  
Typ  
7600  
1280  
620  
Max Unit  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
V
V
GS = 0V  
DS = 25V  
pF  
f = 1MHz  
Shunt Electrical Characteristics (per leg)  
Symbol Characteristic  
Min  
Typ  
20  
2
Max Unit  
Rsh  
Tsh  
Resistance value  
Tolerance  
mΩ  
%
TC=25°C  
TC=80°C  
TC=25°C  
TC=80°C  
20  
W
10  
Psh  
Ish  
Load capacity  
31  
Current capacity  
A
22  
Temperature sensor PTC  
Symbol Characteristic  
Min  
1980  
1.676 1.696 1.716  
Typ  
Max  
2020  
Unit  
R25  
Resistance @ 25°C  
Ω
R100/R25 Resistance ratio  
R-55/R25 Resistance ratio  
Tamb=100°C & 25°C  
Tamb=-55°C & 25°C  
0.48  
0.49  
0.50  
B
Temperature coefficient  
7900  
ppm/K  
Thermal and package characteristics  
Symbol Characteristic  
Min Typ Max Unit  
RthJC  
VISOL  
TJ  
TSTG  
TC  
Junction to Case Thermal Resistance  
MOSFET (per leg)  
0.22 °C/W  
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz  
Operating junction temperature range  
Storage Temperature Range  
4000  
-40  
-40  
-40  
2.5  
V
150  
125  
100  
4.7  
°C  
Operating Case Temperature  
Torque Mounting torque  
Wt Package Weight  
To heatsink  
M4  
N.m  
g
110  
2 – 3  
www.microsemi.com  
APTML602U12R020T3AG  
SP3 Package outline (dimensions in mm)  
2 8  
1 7  
1
12  
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com  
Typical Performance Curve (linear mode) (per leg)  
Power vs Drain source voltage  
Drain Current vs Drain source voltage  
400  
350  
300  
250  
200  
100.0  
TJ=125°C  
TJ=125°C  
10.0  
1.0  
0.1  
0
100  
200  
300  
400  
500  
0
100  
200  
300  
400  
500  
Drain Source Voltage (V)  
Drain Source Voltage (V)  
Microsemi reserves the right to change, without notice, the specifications and information contained herein  
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103  
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262  
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.  
3 – 3  
www.microsemi.com  

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