ARF461C [MICROSEMI]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN;型号: | ARF461C |
厂家: | Microsemi |
描述: | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN 晶体 射频场效应晶体管 放大器 局域网 |
文件: | 总4页 (文件大小:138K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ARF461A(G)
ARF461B(G)
Common
Source
RF POWER MOSFETs
N-CHANNEL ENHANCEMENT MODE
250V 150W
65MHz
The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
optimized for both linear and high efficiency classes of operation.
• Specified 250 Volt, 40.68 MHz Characteristics:
• Low Cost Common Source RF Package.
• Low Vth thermal coefficient.
•
•
•
Output Power = 150 Watts.
Gain = 13dB (Class AB)
Efficiency = 75% (Class C)
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
• RoHS Compliant
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol
Parameter
ARF461AG/BG
Unit
VDSS
Drain-Source Voltage
1000
1000
6.5
V
VDGO
ID
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
A
V
VGS
PD
±30
Total Power Dissipation @ TC = 25°C
Junction to Case
250
W
Rθ
0.50
°C/W
JC
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063” from Case for 10 Sec.
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Min
Typ
Max
Unit
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)
On State Drain Voltage 1 (ID(ON) = 3.25A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125°C)
Gate-Source Leakage Current (VDS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 3.25A)
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
1000
V
VDS(ON)
6.5
25
IDSS
μA
250
IGSS
gfs
±100
5
nA
3
3
4
mhos
Volts
VGS(TH)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
ARF461A/B
Symbol
CISS
Parameter
Test Conditions
Min
Typ
1700
175
50
Max
Unit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
VGS = 0V
Coss
Crss
VDS = 50V
pF
f = 1MHz
td(on)
tr
td(off)
tf
8
VGS = 15V
5
V
DD = 0.5VDSS
ns
ID = ID (Cont.) @ 25°C
Turn-off Delay Time
Fall Time
21
RG = 1.6Ω
10.1
Functional Characteristics
Symbol
Characteristic
Test Conditions
Min
13
Typ
15
Max
Unit
dB
GPS
Common Source Amplifier Power Gain
Drain Efficiency
f = 40.68MHz
VGS = 0V VDD = 250V
POUT = 150W
η
70
75
%
Ψ
Electrical Ruggedness VSWR 10:1
No Degradation in Output Power
1
Pulse Test: Pulse width < 380 ꢀS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
5000
Ciss
1000
500
Coss
Crss
100
50
10
.1
.5
1
5
10
50
200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
8
6
4
2
0
26
TJ = -55°C
100uS
OPERATION HERE
LIMITED BY R (ON)
DS
10
5
VDS> ID (ON) x RDS (ON)MAX.
250ꢀSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
1mS
10mS
1
.5
100mS
DC
TJ = +125°C
TJ = -55°C
TC =+25°C
TJ =+150°C
SINGLE PULSE
TJ = +25°C
2
.1
0
4
6
8
1
10
100
1000
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
Figure 4, Typical Maximum Safe Operating Area
ARF461A/B
1.2
1.1
1.0
0.9
0.8
0.7
25
20
15
10
5
VGS=15, 10, 8 & 6.5V
6V
5.5V
5V
4.5V
4V
0
-50 -25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
1
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0.60
0.50
0.40
0.30
0.20
0.10
0
0.9
0.7
0.5
0.3
0.1
0.05
SINGLE PULSE
10-3
10-5
10-4
10-2
RECTANGULAR PULSE DURATION (SECONDS)
10-1
1.0
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
Junction
temp. ( ”C)
0.0284
0.165
0.307
0.00155F
0.00934F
0.128F
Power
(Watts)
Case temperature
Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
ZOL (7)
Z
(7)
in
2.0
13.5
27
40
65
20.9 - j 9.2
2.4 - j 6.8
.57 - j 2.6
.31 - j 0.5
.44 + j 1.9
38 - j 2.6
31 - j 14
19.6 - j 17.6
12.5 - j 15.8
6.0 - j 10.5
Z
- Gate shunted with 257
I
DQ = 100mA
in
ZOL - Conjugate of optimum load for 150 Watts output at V = 125V
dd
ARF461A/B
L4
+
-
C1 -- 1800pF + 1000pF 100V chips
mounted at gate lead
250V
+
-
Bias
0 - 12V
C7
C8
C2-C5 -- Arco 463 Mica trimmer
C6-C8 -- .1 μF 500V ceramic chip
C9 -- 2200 pF 500 V chip
L1 -- 4t #20 AWG .25"ID .3 "L ~80nH
L2 -- 7t #16 AWG .4" ID .5"L ~335nH
L3 -- 25t #24 AWG .25"ID ~2.2uH
L4 -- VK200-4B ferrite choke 3uH
R1-R2 -- 51 Ohm 0.5W Carbon
DUT = ARF461A/B
L3
C6
R1
C9
C4
RF
Input
RF
Output
C5
L1
L2
C3
DUT
C1
R2
C2
40.68 MHz Test Circuit
TO-247 Package Outline
4.69 .185
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical specifica-
tions. The device pin-outs are the mirror image of each
other to allow ease of use as a push-pull pair.
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
Device
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
ARF- A
ARF- B
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate ------- Drain
Source ---- Source
Drain ------- Gate
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
相关型号:
ARF461CG
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
MICROSEMI
ARF461DG
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
MICROSEMI
ARF461PBF
Data Line Filter, 1 Function(s), 50V, 5A, LEAD FREE, HERMETIC SEALED, WELDED, CERAMIC PACKAGE-5
INFINEON
ARF463A
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD,
MICROSEMI
©2020 ICPDF网 联系我们和版权申明