CD0.2A30E3 [MICROSEMI]

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DIE-2;
CD0.2A30E3
型号: CD0.2A30E3
厂家: Microsemi    Microsemi
描述:

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DIE-2

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• IN6677 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/610  
• 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIER CHIPS  
• SILICON DIOXIDE PASSIVATED  
CD6675 thru CD6677  
and  
CD0.2A20 thru CDO.2A40  
and  
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES ,  
WITH THE EXCEPTION OF SOLDER REFLOW  
CD0.5A20 thru CDO.5A40  
MAXIMUM RATINGS, 0.2 AMP DEVICES  
24 MILS  
16 MILS  
Operating Temperature: -65°C to +125°C  
Storage Temperature: -65°C to +150°C  
Average Rectified Forward Current: 0.2 AMP @ 75°C  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.  
MAXIMUM  
CDI  
TYPE  
NUMBER  
WORKING PEAK  
REVERSE  
VOLTAGE  
MAXIMUM REVERSE  
LEAKAGE CURRENT  
AT RATED VOLTAGE  
CAPACITANCE @  
MAXIMUM FORWARD VOLTAGE  
V
R
= 0 VOLTS  
f =1.0 MHz  
V
RWM  
V
@ 20 mA  
V
@ 200 mA  
V
@ 630 mA  
I
@ +25°C  
I @ +100°C  
R
C
T
F
F
F
R
VOLTS  
20  
VOLTS  
0.37  
VOLTS  
0.50  
VOLTS  
0.70  
µ A  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
mA  
0.6  
0.6  
0.6  
0.6  
0.6  
0.6  
PICO FARADS  
CD6675  
50  
50  
50  
50  
50  
50  
CD6676  
30  
0.37  
0.50  
0.70  
CD6677  
40  
0.37  
0.50  
0.70  
BACKSIDE IS CATHODE  
CD0.2A20  
CD0.2A30  
CD0.2A40  
20  
0.37  
0.50  
0.70  
FIGURE 1  
30  
0.37  
0.50  
0.70  
40  
0.37  
0.50  
0.70  
DESIGN DATA  
METALLIZATION:  
MAXIMUM RATINGS, 0.5 AMP DEVICES  
Top: (Anode)................................Al  
Back: (Cathode)............................Au  
Operating Temperature: -65°C to +125°C  
Storage Temperature: -65°C to +150°C  
AL THICKNESS..........25,000 Å Min  
GOLD THICKNESS... ...4,000 Å Min  
CHIP THICKNESS............. ...10 Mils  
Average Rectified Forward Current: 0.5 AMP @ 75°C  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.  
MAXIMUM  
CAPACITANCE @  
= 0 VOLTS  
TOLERANCES: ALL  
Dimensions + 2 mils  
CDI  
TYPE  
NUMBER  
WORKING PEAK  
REVERSE  
MAXIMUM  
FORWARD VOLTAGE  
MAXIMUM REVERSE  
LEAKAGE CURRENT  
AT RATED VOLTAGE  
V
R
VOLTAGE  
f =1.0 MHz  
V
RWM  
V
@ 0.1A  
V
@ 0.5A  
I
@ +25°C  
I @ +100°C  
R
C
T
F
F
R
VOLTS  
20  
VOLTS  
0.50  
VOLTS  
0.65  
µ A  
10.0  
10.0  
10.0  
mA  
1.0  
1.0  
1.0  
PICO FARADS  
CD0.5A20  
CD0.5A30  
CD0.5A40  
50  
50  
50  
30  
0.50  
0.65  
40  
0.50  
0.65  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
WEBSITE: http://www.microsemi.com  
FAX (978) 689-0803  
217  
CD6675 thru CD6677  
and  
CD0.5A20 thru CD0.5A40  
and  
CD0.5A20 thru CD0.5A40  
TYPICAL REVERSE LEAKAGE CURRENT AT RATED PIV (PULSED)  
10.0  
1.0  
CDO.2A40  
CDO.5A40  
0.1  
CDO.2A20  
CDO.5A20  
0.01  
CDO.2A30  
CDO.5A30  
0.001  
+25  
+50  
+75  
+100  
+125  
T , JUNCTION TEMPERATURE (°C)  
J
FIGURE 1  
TYPICAL FORWARD VOLTAGE  
100.0  
10.0  
1.0  
0.1  
0.01  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
V , FORWARD VOLTAGE, INSTANTANEOUS (VOLTS)  
F
FIGURE 2  
218  

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