CD3A30 [MICROSEMI]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DIE-2;
| 型号： | CD3A30 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DIE-2 二极管 |
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CD5820
thru
• 1N5822 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/620
• 3 AMP SCHOTTKY BARRIER RECTIFIER CHIPS
CD5822
and
CD3A20
thru
• SILICON DIOXIDE PASSIVATED
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
CD3A40
64 MILS
MAXIMUM RATINGS
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
Average Recti½ed Forward Current: 3.0 AMP @ +55°C
Derating: 43 mA / °C above +55°C
BACKSIDE IS CATHODE
FIGURE 1
WORKING PEAK
REVERSE
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
CDI
TYPE
MAXIMUM FORWARD VOLTAGE
VOLTAGE
NUMBER
DESIGN DATA
V
V
@1.0A
V
@3.0A
I
@25°C
mA
I @100°C
R
RWM
F
F
R
VOLTS
20
VOLTS
0.45
VOLTS
0.55
mA
12.5
12.5
12.5
12.5
METALLIZATION:
Top: (Anode) .......................Al
CD5820
CD5821
CD5822
JHC, JKC
5822
0.10
0.10
0.10
0.10
30
0.45
0.55
Back:(Cathode) ..................Au
AL THICKNESS................25,000 Å Min
GOLD THICKNESS... .........4,000 Å Min
CHIP THICKNESS............. .........10 Mils
40
0.45
0.55
40
0.40
0.50
CD3A20
CD3A30
CD3A40
20
30
40
0.45
0.45
0.45
0.55
0.55
0.55
0.10
0.10
0.10
12.5
12.5
12.5
TOLERANCES: ALL
Dimensions + 2 mils
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
FAX (978) 689-0803
215
CD5820 thru CD5822 and CD3A20 thru CD3A40
TYPICAL REVERSE LEAKAGE CURRENT AT RATED PIV (PULSED)
10.0
1.0
0.1
CD5822
CD5821
CD5820
0.01
0.001
+25
+50
+75
+100
+125
T , JUNCTION TEMPERATURE (°C)
J
FIGURE 1
TYPICAL FORWARD VOLTAGE
100.0
10.0
1.0
0.1
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1.0 1.1
V , FORWARD VOLTAGE, INSTANTANEOUS (VOLTS)
F
FIGURE 2
216
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