CD5194E3 [MICROSEMI]
Rectifier Diode, 1 Element, 0.2A, 80V V(RRM), Silicon, DIE-2;
| 型号： | CD5194E3 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Element, 0.2A, 80V V(RRM), Silicon, DIE-2 |
| 文件： | 总2页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
GENERAL PURPOSE – ALL JUNCTIONS COMPLETELY PROTECTED WITH
SILICONE DIODE
SILICON DIOXIDE
– COMPATIBLE WITH ALL WIRE BONDING AND DIE
ATTACH TECHNIQUES EXCEPT SOLDER REFLOW
DEVICES
CD483B
CD485B
CD486B
CD645
CD647
CD649
CD5194
CD5195
CD5196
MAXIMUM RATING AT 25°C
Operating Temperature:
Storage Temperature:
-65°C to +175°C
-65°C to +175°C
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
MAXIMUM
CAPACITANCE @
VR = 4 VOLTS
f = 1.0MHz
MAXIMUM
FORWARD
VOLTAGE
IFSM
MAXIMUM REVERSE
LEAKAGE CURRENT
@ +25oC
TYPE
NUMBER
VRWM
Tp = 1/120 S
TA = +25oC
V
BR @ 50uA
VOLTS
80
VF @ 100mA
VOLTS
IR @ VR
CT
A
2
2
2
5
5
5
2
2
2
nA
25
25
25
50
50
50
25
25
25
VOLTS
70
PICO FARADS
CD483B
CD485B
CD486B
CD645
0.8 – 1.0
-
-
200
0.8 – 1.0
180
225
225
400
600
80
250
0.8 – 1.0
-
27 MILS HEX,
FLAT To FLAT
270
0.8 – 1.0(1)
0.8 – 1.0(1)
0.8 – 1.0(1)
0.8 – 1.0
20
20
20
-
CD647
480
CD649
720
CD5194
CD5195
CD5196
80
200
0.8 – 1.0
200
225
-
250
0.8 – 1.0
-
NOTE: (1) Performed at 400mA pulsed.
MAXIMUM REVERSE
LEAKAGE CURRENT
@TA = +150oC
MAXIMUM FORWARD
VOLTAGE @ -55OC
TYPE
NUMBER
IO
IO
VF @ 400mA
TA = + 150oC
T
A = +150oC
IR @ VR
VF @ IF
mA
200
200
200
400
400
400
200
200
200
mA
50
V
uA
5
nA
25
25
25
50
50
50
25
25
25
VOLTS
mA
100
100
100
400
400
400
100
100
100
CD483B
CD485B
CD486B
CD645
-
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
50
-
5
50
-
5
150
150
150
50
0.7 – 0.95
50
50
50
5
CD647
0.7 – 0.95
CD649
0.7 – 0.95
CD5194
CD5195
CD5196
-
-
-
50
5
50
5
LDS-0179 Rev. 1 (101264)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DIE DIMENSIONS
DESIGN DATA
METALIZATION
Top: ( Cathode )….Au
Bottom: (Anode)..Al
AL Thickness...25,000A Min
Gold Thickness …4,000A Min
.016
.027
CHIP THICKNESS …10 Mils
Tolerances: All
Dimensions +/- 2 mils
LDS-0179 Rev. 1 (101264)
Page 2 of 2
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