CD5518BE3 [MICROSEMI]

Zener Diode, 3.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-2;


型号：	CD5518BE3
厂家：	Microsemi
描述：	Zener Diode, 3.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-2
文件：	总2页 (文件大小：126K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CD5518B

thru

• 1N5518B THRU 1N5546B AVAILABLE IN JANHC AND JANKC

PER MIL-PRF-19500/437

• ZENER DIODE CHIPS

CD5546B

• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE

• ELECTRICALLY EQUIVALENT TO 1N5518B THRU 1N5546B

• 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING

• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,

WITH THE EXCEPTION OF SOLDER REFLOW

23 MILS

15 MILS

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Forward Voltage @ 200 mA: 1.5 Volts Maximum

ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed

NOMINAL

ZENER

VOLTAGE

MAX. REVERSE

MAX. ZENER LEAKAGE CURRENT REGULATION

JEDEC

TYPE

LOW

TEST

IMPEDANCE

FACTOR

NUMBER

@ l

CURRENT

@ l

³V

CURRENT

VOLTS

OHMS

µ Adc

VOLTS

(Note 1)

mAdc

(Note 2)

VOLTS

(Note 3)

mAdc

CD5518B

CD5519B

CD5520B

CD5521B

CD5522B

3.3

3.6

3.9

4.3

4.7

5.0

3.0

1.0

3.0

2.0

1.0

1.5

2.0

0.90

0.75

0.60

2.0

1.0

BACKSIDE IS CATHODE

CD5523B

CD5524B

CD5525B

CD5526B

CD5527B

5.1

5.6

6.2

6.8

7.5

5.0

3.0

1.0

2.0

1.0

0.5

2.5

3.5

5.0

6.2

6.8

0.65

0.30

0.20

0.10

0.05

0.25

0.01

CD5528B

CD5529B

CD5530B

CD5531B

CD5532B

8.2

9.1

10.0

11.0

12.0

1.0

0.5

0.1

0.05

7.5

8.2

9.1

9.9

10.8

0.05

0.10

0.20

0.01

DESIGN DATA

METALLIZATION:

Top: (Anode)......................Al

CD5533B

CD5534B

CD5535B

CD5536B

CD5537B

13.0

14.0

15.0

16.0

17.0

1.0

100

0.01

11.7

12.6

13.5

14.4

15.3

0.20

0.01

0.10

Back: (Cathode)............ ...Au

AL THICKNESS............25,000 Å Min

GOLD THICKNESS........4,000 Å Min

CHIP THICKNESS..................10 Mils

CD5538B

CD5539B

CD5540B

CD5541B

CD5542B

18.0

19.0

20.0

22.0

24.0

1.0

100

0.01

16.2

17.1

18.0

19.8

21.6

0.20

0.25

0.30

0.01

CD5543B

CD5544B

CD5545B

CD5546B

25.0

28.0

30.0

33.0

1.0

100

0.01

22.4

25.2

27.0

29.7

0.35

0.40

0.45

0.50

0.01

CIRCUIT LAYOUT DATA:

For Zener operation, cathode

must be operated positive with

respect to anode.

NOTE 1 Suffix “B” voltage range equals nominal Zener voltage + 5%. Suffix “A” equals

+ 10%. No Suffix equals + 20%. Zener voltage is read using a pulse

TOLERANCES: ALL Dimensions

+ 2 mils, Except Anode Pad Where

Tolerance is + 0.1 mils.

measurement, 10 milliseconds maximum. "C" suffix = + 2% and "D" suffix = +1%.

NOTE 2 Zener impedance is derived by superimposing on l

A 60Hz rms a.c.

current equal to 10% of l

NOTE 3 ³VZ is the maximum difference between V @ 1

and V at 1 measured

with the device junction in thermal equilibrium at an ambient temperature of

+25° + 3°C.

6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841

PHONE (978) 620-2600

WEBSITE: http://www.microsemi.com

FAX (978) 689-0803

209

CD5518B thru CD5546B

1000

500

400

300

200

100

.2 .3 .4 .5

30 40

100

OPERATING CURRENT l

(mA)

FIGURE 3

ZENER IMPEDANCE VS. OPERATING CURRENT

210

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