CD826E3 [MICROSEMI]
Zener Diode, 6.2V V(Z), 4.84%, Silicon, DIE-3;型号: | CD826E3 |
厂家: | Microsemi |
描述: | Zener Diode, 6.2V V(Z), 4.84%, Silicon, DIE-3 |
文件: | 总3页 (文件大小:205K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ZENER DIODE
– Monolithic Temperature Compensated Zener Reference Chips
– All Junctions Completely Protected with Silicon Dioxide
– Electrically Equivalent to 1N821 Thru 1N829
– Compatible with all Wire Bonding and Die Attach Techniques with
the Exception of Solder Reflow
DEVICES
QUALIFIED LEVELS
CD821 thru CD829A
JANHC
JANKC
MAXIMUM RATING AT 25°C
Operating Temperature:
Storage Temperature:
-65°C to +175°C
-65°C to +175°C
REVERSE LEAKAGE CURRENT
IR = 2μA @ 25°C & VR = 3Vdc
A
C
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
T
TYPE
NUMBER
ZENER
VOLTAGE
ZENER
TEST
MAXIMUM
ZENER
-55° to +100°
VOLTAGE
EFFECTIVE
TEMPERATURE
COEFFICIENT
CURRENT IMPEDANCE TEMPERATURE
STABILITY
VZT @ IZT
VOLTS
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
6.2 – 6.9
5.9 – 6.5
5.9 – 6.5
IZT
mA
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
ZZT (Note 1)
3VZT (Note 2)
OHMS
15
mV
96
96
48
48
19
19
20
9
% / °C
0.01
0.01
CD821
CD821A
CD823
CD823A
CD825
CD825A
CD826
13
15
13
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
15
13
15
CD827
15
CD827A
CD828
13
15
9
10
5
CD829
15
CD829A
13
5
NOTE:
1. Zener impedance is derived by superimposing on IZT A 60Hz rms a.c. current equal to 10%
of IZT.
2. The maximum allowable change observed over the entire temperature range i.e., the diode
voltage will not exceed the specified mV at any discrete temperature between the
established limits, per JEDEC standard No.5
LDS-0052 Rev. 1 (101557)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT
WITH CHANGE IN OPERATING CURRENT
Qualified per MIL-PRF-19500/159
CD821 thru CD829A
FIGURE 3
ZENER IMPEDANCE
VS.
OPERATING CURRENT
FIGURE 4
LDS-0052 Rev. 1 (101557)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Inches Millimeters
Min Max Min Max
Symbol
A
B
C
D
E
.0280 .0320 .711 .813
.0080 .0100 .203 .254
.0104 .0106 .264 .269
.0019 .0021 .048 .053
.0054 .0056 .137 .142
.0020 .0040 .050 .102
.0280 .0320 .711 .813
.0030 .0050 .076 .127
.0030 .0050 .076 .127
.0209 .0211 .531 .536
.0080 .0100 .203 .254
.0104 .0106 .264 .269
.0059 .0061 .150 .155
F
G
H
J
K
L
M
N
Backside must be electrically isolated to ensure proper performance.
DESIGN DATA
Metallization:
Top: 1 (Cathode)
2 (Anode)
Al
Al
Al
Circuit layout data:
For zener operation, cathode must be operated positive with respect to anode.
Test pad is for wire bond evaluation only. No electrical contact is made with test pad.
3 (Test pad)
Back:
Au
Al thickness
25,000Å minimum.
Gold thickness
Chip thickness
4,000Å minimum.
.010 inch (0.25 mm) ±0.002 inch (+0.05 mm).
NOTES:
1. Dimensions are in inches unless otherwise indicated.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
JANHC and JANKC (A-version) die dimensions.
LDS-0052 Rev. 1 (101557)
Page 3 of 3
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