CDLL4150E3 [MICROSEMI]
Rectifier Diode, 1 Element, 0.3A, Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2;
| 型号： | CDLL4150E3 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Element, 0.3A, Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2 |
| 文件： | 总1页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FEATURES
•
1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-
19500/231
1N4150UR-1
•
•
•
•
•
SWITCHING DIODE
METALLURGICALLY BONDED
HERMETICALLY SEALED
DOUBLE PLUG CONSTRUCTION
LSO VAILABLE S &
MAXIMUM RATINGS AT 25 °C
Operating Temperature:
Storage Temperature:
Surge Current A, sine 1uS:
Surge Current B, sine 1S:
Total Power Dissipation:
Operating Current:
-65°C to +175°C
-65°C to +175°C
4.0A
0.5A
500mW
200mA, TA= +25°C to +110°C
Derating Factor:
D.C. Reverse Voltage (VRWM):
3.1mA/°C above TEC= +110°C
50V
DC ELECTRICAL CHARACTERISTICS
VF IR
VBR
Ambient
Ambient
Ambient
IF
Min Max
Min Max
IR
Min Max
mA
V
V
V (dc) µA
µA
0.1
100
µA
V
V
(°C)
(°C)
(°C)
25
25
25
25
25
1
10
50
100
200
.54 .62
.66 .74
.76 .86
.82 .92
.87 1.00
25
150
50
50
-
-
25
10
75
-
AC ELECTRICAL CHARACTERISTICS AT 25°C
DESIGN DATA
Symbol
Min
Max
Case: Hermetically sealed glass package per MIL-
PRF-19500/231 DO-213AA outline
Capacitance @ 0V
pF
-
2.5
TRR @ IF =IR=10mA,
nsec
-
-
-
4
5
IRec = 1mA.
Lead Material: Copper clad steel
V
VFR @ IF= 200mA
TFR @ IF = 200mA
Lead Finish: Tin/Lead
nsec
10
Thermal Resistance (RθJEC): 100°C/W maximum
Thermal Impedance (ZθJX): 70°C/W maximum
Polarity: Cathode end is banded.
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