CDLL5540BE3 [MICROSEMI]
Zener Diode, 20V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2;
| 型号： | CDLL5540BE3 |
| 厂家： | 
Microsemi |
| 描述： | Zener Diode, 20V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2 测试 二极管 |
| 文件： | 总2页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ZENER DIODE, 500mW
– LEADLESS PACKAGE FOR SURFACE MOUNT
– LOW REVERSE LEAKAGE CHARACTERISTICS
– METALLURGICALLY BONDED
Qualified per MIL-PRF-19500/437
DEVICES
QUALIFIED LEVELS
JAN
JANTX
1N5518BUR-1 Thru 1N5546BUR-1
And
JANTXV
CDLL5518 Thru CDLL5546D
MAXIMUM RATING AT 25°C
Junction and Storage Temperature:
DC Power Dissipation:
Power Derating:
-65°C to +175°C
500mW @ TEC = +125°C
10mW / °C above TEC = +125°C
1.1 volts maximum
Forward Voltage @ 200mA:
D
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
MAX. ZENER
IMPEDANCE
B-C-D
B-C-D
NOMINAL
ZENER
ZENER
TEST
REGULATION
FACTOR
LOW
VZ
MAXIMUM REVERSE LEAKAGE
CURRENT
SUFFIX
MAIMUM
DC ZENER
G1
F
G
VOLTAGE
CURRENT
CURRENT
CURRENT
TYPE
SUFFIX
NUMBER
VZ @ IZT
(NOTE 2)
ZZT @ IZT
(NOTE 3)
IR
∆VZ
(NOTE 5)
IZT
V
R = VOLTS
IZM
IZL
(NOTE 4)
(NOTE 1)
NON &
A-
SUFFIX
B-C-D-
SUFFIX
VOLTS
mA
Ohms
mA
VOLTS
mA
µAdc
S
CDLL5518B
CDLL5519B
CDLL5520B
CDLL5521B
CDLL5522B
3.3
3.6
3.9
4.3
4.7
20
20
20
20
10
26
24
22
18
22
5.0
3.0
1.0
3.0
2.0
0.90
0.90
0.90
1.0
1.0
1.0
1.0
1.5
2.0
115
105
98
88
81
0.90
0.90
0.85
0.75
0.60
2.0
2.0
2.0
2.0
1.0
MILLIMETERS
INCHES
1.5
CDLL5523B
CDLL5524B
CDLL5525B
CDLL5526B
CDLL5527B
5.1
5.6
6.2
6.8
7.5
5.0
3.0
1.0
1.0
1.0
26
30
30
30
35
2.0
2.0
1.0
1.0
0.5
2.0
3.0
4.5
5.5
6.0
2.5
3.5
5.0
6.2
6.8
75
68
61
56
51
0.65
0.30
0.20
0.10
0.05
0.25
0.25
0.01
0.01
0.01
DIM
MIN
MAX
MIN
MAX
D
F
1.60
0.41
3.30
1.70
0.55
3.70
0.063
0.016
.130
0.067
0.022
.146
CDLL5528B
CDLL5529B
CDLL5530B
CDLL5531B
CDLL5532B
8.2
9.1
10.0
11.0
12.0
1.0
1.0
1.0
1.0
1.0
40
45
60
80
90
0.5
0.1
0.05
0.05
0.05
6.5
7.0
8.0
9.0
9.5
7.5
8.2
46
42
38
35
32
0.05
0.05
0.10
0.20
0.20
0.01
0.01
0.01
0.01
0.01
G
9.1
G1
S
2.54 REF.
0.03 MIN
.100 REF.
.001 MIN
9.9
10.8
CDLL5533B
CDLL5534B
CDLL5535B
CDLL5536B
CDLL5537B
13.0
14.0
15.0
16.0
17.0
1.0
1.0
1.0
1.0
1.0
90
0.01
0.01
0.01
0.01
0.01
10.5
11.5
12.5
13.0
14.0
11.7
12.6
13.5
14.4
15.3
29
27
25
24
22
0.20
0.20
0.20
0.20
0.20
0.01
0.01
0.01
0.01
0.01
100
100
100
100
FIGURE 1
CDLL5538B
CDLL5539B
CDLL5540B
CDLL5541B
CDLL5542B
18.0
19.0
20.0
22.0
24.0
1.0
1.0
1.0
1.0
1.0
100
100
100
100
100
0.01
0.01
0.01
0.01
0.01
15.0
16.0
17.0
18.0
20.0
16.2
17.1
18.0
19.8
21.6
21
20
19
17
16
0.20
0.20
0.20
0.25
0.30
0.01
0.01
0.01
0.01
0.01
DESIGN DATA
CASE: DO-213AA, Hermetically sealed glass case.
(MELF, SOD-80, LL34)
0.01
0.01
0.01
0.01
0.01
CDLL5543B
CDLL5544B
CDLL5545B
CDLL5546B
25.0
28.0
30.0
33.0
1.0
1.0
1.0
1.0
100
100
100
100
0.01
0.01
0.01
0.01
21.0
23.0
24.0
28.0
22.4
25.2
27.0
29.7
15
14
13
12
0.35
0.40
0.45
0.50
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (R
100 °C/W maximum at L = 0 inch
):
θJEC
NOTE 1: No Suffix type numbers are ±20% with guaranteed limits for only VZ, IR, and VF. Units with “A”
suffix are ±10% with guaranteed limits for VZ, IR, and VF. Units with guaranteed limits for all six
parameters are indicated by a “B” suffix for ±5.0% units, “C” suffix for ±2.0% and “D” suffix for
±1.0%.
THERMAL IMPEDANCE: (Z
35°C/W maximum
):
θJX
NOTE 2: Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C ± 3°C.
POLARITY: Diode to be operated with the banded
(cathode) end positive.
NOTE 3: Zener impedance is derived by superimposing on IZT A 60Hz rms a.c. current equal to 10% of IZT
.
MOUTING SURFACE SELECTION:
The Axial Coefficient of Expansion (COE) of this
device is approximately +6PPM/°C. The COE of the
Mounting Surface System should be selected to
provide a suitable match with this device.
NOTE 4: Reverse leakage currents are measured at VR as shown on the table.
NOTE 5: ∆VZ is the maximum difference between VZ at IZT and VZ at IZL measured with the device junction
in thermal equilibrium.
LDS-0037 Rev. 1 (072304)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01844
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
CDLL5518 thru CDLL5546D
OPERATING CURRENT IZT (mA)
FIGURE 3
ZENER IMPEDANCE VS. OPERATION CURRENT
LDS-0037 Rev. 1 (072304)
Page 2 of 2
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