CDLL5819-TR [MICROSEMI]
Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-213AB, HERMETIC SEALED, GLASS, LL41, MELF-2;
| 型号： | CDLL5819-TR |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-213AB, HERMETIC SEALED, GLASS, LL41, MELF-2 |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
• 1N5819UR-1 AND 1N6761UR-1 AVAILABLE IN JAN, JANTX, JANTXV
AND JANS PER MIL-PRF-19500/586
1N5819UR
and
CDLL5817 thru CDLL5819
and
CDLL6759 thru CDLL6761
and
• 1 AMP SCHOTTKY BARRIER RECTIFIERS
• HERMETICALLY SEALED
• LEADLESS PACKAGE FOR SURFACE MOUNT
• METALLURGICALLY BONDED
CDLL1A20 thru CDLL1A100
MAXIMUM RATINGS
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Average Rectified Forward Current: 1.0 AMP @T
= +55°C
EC
Derating: 14 mA / °C above T
EC
= +55°C
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
D
F
2.39
0.41
4.80
2.66 .094 .105
0.55 .016 .022
5.20 .189 .205
G
G1
S
4.11 REF.
0.03 MIN.
.159 REF.
.001 MIN.
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
CDI
TYPE
NUMBER
WORKING PEAK
REVERSE
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
FIGURE 1
MAXIMUM FORWARD VOLTAGE
VOLTAGE
V
V
@ 0.1A
V
@ 1.0A
VOLTS
V
@ 3.1A
I
@ +25°C
I
R
@ +100°C
RWM
F
F
F
R
DESIGN DATA
VOLTS
VOLTS
VOLTS
mA
mA
CDLL5817
CDLL5818
CDLL5819
J,JX,JV & JS
5819UR-1
20
30
40
45
0.36
0.36
0.36
0.34
0.60
0.60
0.60
0.49
0.9
0.9
0.9
0.8
0.1
0.1
5.0
5.0
5.0
5.0
CASE: DO-213AB, Hermetically sealed
glass case. (MELF, LL41)
0.1
0.05
LEAD FINISH: Tin / Lead
CDLL6759
CDLL6760
CDLL6761
J,JX,JV & JS
6761UR-1
60
80
0.38
0.38
0.38
0.38
0.69
0.69
0.69
0.69
N/A
N/A
N/A
N/A
0.1
0.1
6.0
6.0
THERMAL RESISTANCE: (R
):
OJEC
40 ÞC/W maximum at L = 0 inch
100
100
0.1
6.0
THERMAL IMPEDANCE: (Z
): 12
OJX
0.10
12.0
ÞC/W maximum
CDLL1A20
CDLL1A30
CDLL1A40
CDLL1A50
CDLL1A60
CDLL1A80
CDLL1A100
20
30
0.36
0.36
0.36
0.36
0.38
0.38
0.38
0.60
0.60
0.60
0.60
0.69
0.69
0.69
0.9
0.9
0.9
0.9
N/A
N/A
N/A
0.1
0.1
0.1
0.1
0.1
0.1
0.1
5.0
5.0
POLARITY: Cathode end is banded.
40
5.0
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
50
5.0
60
12.0
12.0
12.0
80
100
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
FAX (978) 689-0803
147
CDLL5817 thru CDLL5819
and
CDLL6759 thru CDLL6761
and
CDLL1A20 thru CDLL1A100
TYPICAL REVERSE LEAKAGE CURRENT AT RATED PIV (PULSED)
10.0
1.0
CDLL5819
0.1
CDLL5818
CDLL5817
0.01
0.001
+25
+50
+75
+100
+125
T
, JUNCTION TEMPERATURE (°C)
J
FIGURE 1
TYPICAL FORWARD VOLTAGE
100.0
10.0
1.0
0.1
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V , FORWARD VOLTAGE, INSTANTANEOUS (VOLTS)
F
FIGURE 2
148
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