EDI88130CS15LC [MICROSEMI]
Standard SRAM, 128KX8, 15ns, CMOS, CDSO32, CERAMIC, LCC-32;
| 型号： | EDI88130CS15LC |
| 厂家： | 
Microsemi |
| 描述： | Standard SRAM, 128KX8, 15ns, CMOS, CDSO32, CERAMIC, LCC-32 CD 静态存储器 |
| 文件： | 总10页 (文件大小：1086K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EDI88130CS
128Kx8 Monolithic SRAM, SMD 5962-89598
FEATURES
Access Times of 15*, 17, 20, 25, 35, 45, 55ns
An additional chip enable line provides system memory security
during power down in non-battery backed up systems and memory
banking in high speed battery backed systems where large multiple
pages of memory are required.
Battery Back-up Operation
• 2V Data Retention (EDI88130LPS)
CS1#, CS2 & OE# Functions for Bus Control
Inputs and Outputs Directly TTL Compatible
Organized as 128Kx8
The EDI88130CS has eight bi-directional input-output lines to provide
simultaneous access to all bits in a word.
A low power version, EDI88130LPS, offers a 2V data retention
function for battery back-up applications.
Commercial, Industrial and Military Temperature Ranges
Thru-hole and Surface Mount Packages JEDEC Pinout
• 32 pin Sidebrazed Ceramic DIP, 400 mil (Package 102)
• 32 pin Sidebrazed Ceramic DIP, 600 mil (Package 9)
• 32 lead Ceramic SOJ (Package 140)
Military product is available compliant to MIL-PRF-38535.
* 15ns access time is advanced information, contact factory for availability.
This product is subject to change without notice.
• 32 pad Ceramic Quad LCC (Package 12)
• 32 pad Ceramic LCC (Package 141)
• 32 lead Ceramic Flatpack (Package 142)
Single +5V (±10%) Supply OperationThe EDI88130CS is
a high speed, high performance, 128Kx8 bits monolithic
Static RAM.
FIGURE 1 – PIN CONFIGURATION
32 DIP
32 SOJ
32 QUAD LCC
TOP VIEW
PIN DESCRIPTION
32 CLCC
I/O0-7
A0-16
WE#
Data Input/Output
Address Inputs
Write Enable
Chip Select
32 FLATPACK
CS1#, CS2
OE#
TOP VIEW
4
3
2
1
32
31 30
Output Enable
Power Supply
Ground
5
6
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
WE#
A13
A8
VCC
NC
A16
A14
A12
A7
1
2
3
4
5
6
7
8
9
32 VCC
31 A15
30 CS2#
29 WE#
28 A13
27 A8
VSS
7
8
NC
Not Connected
A9
9
A11
OE#
A10
CS1#
I/O7
A6
10
11
12
13
A5
26 A9
A4
25 A11
24 OE#
23 A10
22 CS1#
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
Block Diagram
A3
A2 10
A1 11
Memory Array
14
15
16
17 18
19
20
A0 12
I/O0 13
I/O1 14
I/O2 15
VSS 16
Address
Buffer
Address
Decoder
I/O
Circuits
A0-16
I/O0-7
WE#
CS1#
CS2
OE#
Microsemi Corporation reserves the right to change products or specifications without notice.
October 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 13
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
EDI88130CS
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
Parameter
Unit
V
OE# CS1# CS2 WE#
Mode
Standby
Standby
Output Deselect
Read
Output
High Z
High Z
High Z
Data Out
Data In
Power
Icc2, Icc3
Icc2, Icc3
Icc1
Icc1
Icc1
Voltage on any pin relative to VSS
Operating Temperature TA (Ambient)
Industrial
-0.2 to 7.0
X
X
H
L
H
X
L
L
L
X
L
H
H
H
X
X
H
H
L
-40 to +85
-55 to +125
-65 to +150
1.7
°C
°C
°C
W
Military
Storage Temperature, Ceramic
Power Dissipation
X
Write
Output Current
Junction Temperature, TJ
40
175
mA
°C
CAPACITANCE
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions greater than those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TA = +25°C
Max
Parameter
Address Lines
Data Lines
Symbol
CI
Condition
Unit
pF
CSOJ,DIP,
Flatpack
LCC
VIN = Vcc or Vss,
f = 1.0MHz
6
12
RECOMMENDED OPERATING CONDITIONS
CO
VOUT = Vcc or Vss,
f = 1.0MHz
8
14
pF
Parameter
Symbol
VCC
VSS
Min
4.5
0
Typ
5.0
0
Max
5.5
0
Unit
V
These parameters are sampled, not 100% tested.
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
V
V
V
VIH
VIL
2.2
-0.5
—
—
VCC +0.5
+0.8
DC CHARACTERISTICS
VCC = 5.0V, -55°C ≤ TA ≤ +125°C
Parameter
Input Leakage Current
Output Leakage Current
Symbol
ILI
ILO
Conditions
VIN = 0V to VCC
VI/O = 0V to VCC
Min
—
—
Typ
—
—
Max
±5
±10
Units
μA
μA
(15-17ns)
(20ns)
(25-55ns)
(17-55ns)
(15ns)
—
—
—
—
—
—
—
—
300
225
200
25
60
10
15
5
0.4
—
mA
mA
mA
mA
mA
mA
mA
mA
V
Operating Power Supply Current
Icc1
Icc2
WE# = VIH, CS1# = VIL, II/O = 0mA, CS2 = VIH
CS1# ≥ VIH and/or CS2 ≤ VIL,
Standby (TTL) Power Supply Current
V
IN ≥ VIH or ≤ VIL, f = 0
CS1# ≥ VCC -0.2V and/or CS2 ≤ 0.2V
IN ≥ VCC -0.2V or VIN ≤ 0.2V, f = 0
CS (17-55ns)
CS (15ns)
LPS
3
Full Standby Power Supply Current
Icc3
—
—
—
—
V
Output Low Voltage
Output High Voltage
VOL
VOH
IOL = 8.0mA
IOH = -4.0mA
—
2.4
V
AC Test Conditions
Vcc
Vcc
Figure 1
Figure 2
Input Pulse Levels
Input Rise and Fall Times
VSS to 3.0V
480Ω
480Ω
5pF
5ns
1.5V
Input and Output Timing Levels
Output Load
Q
Q
Figure 1
NOTE: For tEHQZ, tGHQZ and tWLQZ, CL = 5pF Figure 2
30pF
255Ω
255Ω
Microsemi Corporation reserves the right to change products or specifications without notice.
October 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 13
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
EDI88130CS
AC CHARACTERISTICS – READ CYCLE (15 to 20ns)
VCC = 5.0V, Vss = 0V, -55°C ≤ TA ≤ +125°C
Symbol
15ns*
17ns
20ns
Parameter
Units
JEDEC
tAVAV
Alt.
tRC
tAA
Min
Max
Min
Max
Min
Max
Read Cycle Time
15
17
20
ns
ns
Address Access Time
tAVQV
15
17
20
tE1LQV
tE2HQV
tE1LQX
tE2HQX
tE1HQZ
tE2LQZ
tACS
tACS
tCLZ
tCLZ
tCHZ
tCHZ
tOH
tOE
tOLZ
tOHZ
15
15
17
17
20
20
ns
ns
Chip Enable Access Time
5
5
5
5
5
5
ns
ns
Chip Enable to Output in Low Z (1)
Chip Disable to Output in Low Z (1)
6
6
7
7
8
8
ns
ns
Output Hold from Address Change
Output Enable to Output Valid
tAVQX
tGLQV
tGLQX
tGHQZ
3
0
3
0
3
0
ns
ns
ns
ns
6
5
6
6
7
8
Output Enable to Output in Low Z (1)
Output Disable to Output in High Z(1)
tE1LICCH
tE2HICCH
tE1HICCL
tE2LICCL
tPU
tPU
0
0
0
0
0
0
ns
ns
Chip Enable to Power Up (1)
tPD
tPD
15
15
17
17
20
20
ns
ns
Chip Enable to Power Down (1)
1. This parameter is guaranteed by design but not tested.
* 15ns access time is advanced information, contact factory for availability.
AC CHARACTERISTICS – READ CYCLE (25 to 55ns)
VCC = 5.0V, Vss = 0V, -55°C ≤ TA ≤ +125°C
Symbol
JEDEC
tAVAV
tAVQV
tE1LQV
tE2HQV
tE1LQX
tE2HQX
tE1HQZ
tE2LQZ
25ns
35ns
45ns
55ns
Parameter
Units
Alt.
tRC
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
25
35
45
55
ns
ns
ns
ns
Address Access Time
Chip Enable Access Time
Chip Enable Access Time
tAA
25
25
25
35
35
35
45
45
45
55
55
55
tACS
tACS
tCLZ
tCLZ
tCHZ
tCHZ
tOH
tOE
tOLZ
tOHZ
5
5
5
5
5
5
5
5
ns
ns
Chip Enable to Output in Low Z (1)
Chip Disable to Output in Low Z (1)
10
10
15
15
20
20
20
20
ns
ns
Output Hold from Address Change
Output Enable to Output Valid
tAVQX
tGLQV
tGLQX
tGHQZ
0
0
0
0
0
0
0
0
ns
ns
ns
ns
10
10
15
15
20
20
25
20
Output Enable to Output in Low Z (1)
Output Disable to Output in High Z(1)
tE1LICCH
tE2HICCH
tE1HICCL
tE2LICCL
tPU
tPU
0
0
0
0
0
0
0
0
ns
ns
Chip Enable to Power Up (1)
tPD
tPD
25
25
35
35
45
45
55
55
ns
ns
Chip Enable to Power Down (1)
1. This parameter is guaranteed by design but not tested.
Microsemi Corporation reserves the right to change products or specifications without notice.
October 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 13
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
EDI88130CS
AC CHARACTERISTICS – WRITE CYCLE (15 to 20ns)
VCC = 5.0V, Vss = 0V, -55°C ≤ TA ≤ +125°C
Symbol
15ns*
17ns
20ns
Parameter
JEDEC
Alt.
Min
Max
Min
Max
Min
Max
Units
Write Cycle Time
Chip Enable to End of Write
tAVAV
tWC
15
17
20
ns
tE1LWH
tE1LE1H
tE2HWH
tE2HE2L
tCW
tCW
tCW
tCW
12
12
12
12
13
13
13
13
15
15
15
15
ns
ns
ns
ns
Address Setup Time
tAVWL
tAVE1L
tAVE2H
tAS
tAS
tAS
0
0
0
0
0
0
0
0
0
ns
ns
ns
Address Valid to End of Write
Write Pulse Width
tAVWH
tAW
12
13
15
ns
tWLWH
tWLE1H
tWLE2L
tWP
tWP
tWP
12
12
12
13
13
13
15
15
15
ns
ns
ns
Write Recovery Time
Data Hold Time
tWHAX
tE1HAX
tE2LAX
tWHDX
tE1HDX
tE2LDX
tWR
tWR
tWR
tDH
tDH
tDH
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
ns
ns
ns
ns
ns
ns
Write to Output in High Z (1)
Data to Write Time
tWLQZ
tWHZ
0
7
0
8
0
8
ns
tDVWH
tDVE1H
tDVE2L
tDW
tDW
tDW
7
7
7
8
8
8
10
10
10
ns
ns
ns
Output Active from End of Write (1)
tWHQX
tWLZ
3
3
3
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS – WRITE CYCLE (25 to 55ns)
VCC = 5.0V, Vss = 0V, -55°C ≤ TA ≤ +125°C
Symbol
25ns
35ns
45ns
55ns
Parameter
Write Cycle Time
Chip Enable to End of Write
JEDEC
tAVAV
tE1LWH
tE1LE1H
tE2HWH
tE2HE2L
Alt.
tWC
tCW
tCW
tCW
tCW
Min
25
20
Max
Min
35
25
Max
Min
45
35
Max
Min
55
45
Max
Units
ns
ns
ns
ns
ns
16
16
20
20
25
25
40
40
16
20
25
40
Address Setup Time
tAVWL
tAVE1L
tAVE2H
tAS
tAS
tAS
0
0
0
0
0
0
0
0
0
0
0
0
ns
ns
ns
Address Valid to End of Write
Write Pulse Width
tAVWH
tAVEH
tWLWH
tWLE1H
tWLE2L
tAW
tAW
tWP
tWP
tWP
20
20
20
20
20
25
25
30
30
30
35
35
30
30
30
45
45
35
35
35
ns
ns
ns
ns
ns
Write Recovery Time
Data Hold Time
tWHAX
tE1HAX
tE2LAX
tWHDX
tE1HDX
tE2LDX
tWR
tWR
tWR
tDH
tDH
tDH
0
0
0
0
0
0
0
0
0
0
0
0
5
5
5
0
0
0
5
5
5
0
0
0
ns
ns
ns
ns
ns
ns
Write to Output in High Z (1)
Data to Write Time
tWLQZ
tWHZ
0
10
0
13
0
15
0
20
ns
tDVWH
tDVE1H
tDVE2L
tDW
tDW
tDW
15
15
15
20
20
20
20
20
20
25
25
25
ns
ns
ns
Output Active from End of Write (1)
tWHQX
tWLZ
3
3
3
3
ns
1. This parameter is guaranteed by design but not tested.
Microsemi Corporation reserves the right to change products or specifications without notice.
October 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 13
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Microsemi Corporation • (602) 437-1520 • www.microsemi.com
EDI88130CS
FIGURE 2 – TIMING WAVEFORM – READ CYCLES
tAVAV
ADDRESS
CS1#
tAVQV
tAVAV
tE1LQV
tE1HQZ
tE1LQX
ADDRESS
DATA I/O
ADDRESS 1
ADDRESS 2
tE1HICCL
tE1LICCH
Icc
tE2LICCL
tE2HQV
tAVQV
tAVQX
CS2
tE2HICCH
DATA 1
DATA 2
tE2HQX
OE#
READ CYCLE 1 (WE# HIGH; OE#, CS# LOW)
tGLQV
tGLQX
tGHQZ
DATA I/O
READ CYCLE 2 (CS1# AND/OR CS2 CONTROLLED, WE# HIGH)
FIGURE 3 – WRITE CYCLE 1
tAVAV
ADDRESS
tAVWH
tAVWL
tWHAX
tWLWH
WE#
CS1#
CS2
tE1LWH
tE2HWH
tDVWH
tWHDX
DATA IN
tWLQZ
tWHQX
DATA OUT
WRITE CYCLE 1 - LATE WRITE, WE# CONTROLLED
FIGURE 4 –
WRITE CYCLES 2
WRITE CYCLES 3
tAVAV
tAVAV
ADDRESS
ADDRESS
tAVE2H
tAVE1L
tE2HE2L
tE2LAX
tE1LE1H
tE1HAX
WE#
CS1#
CS2
WE#
CS1#
CS2
tDVE2L
tE2LDX
tDVE1H
tE1HDX
DATA I/O
DATA I/O
WRITE CYCLE 3 – EARLY WRITE, CS2 CONTROLLED
WRITE CYCLE 2 – EARLY WRITE, CS1# CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice.
October 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 13
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
EDI88130CS
DATA RETENTION CHARACTERISTICS (EDI88130LPS Only)
-55°C ≤ TA ≤ +125°C
Characteristic
Low Power Version only
Sym
Conditions
Min
Typ
Max
Units
Data Retention Voltage
VCC
ICCDR
TCDR
TR
VCC = 2.0V
CS1# ≥ VCC -0.2V and/or CS2 ≥ VSS +0.2V
VIN ≥ VCC -0.2V
2
–
0.5
–
–
2
–
–
V
Data Retention Quiescent Current
Chip Disable to Data Retention Time (1)
Operation Recovery Time (1)
–
0
mA
ns
or VIN ≤ 0.2V
Tavav*
–
ns
NOTE:
1. Parameter guaranteed by design, but not tested.
* Read Cycle Time
FIGURE 5 – DATA RETENTION – CS1# CONTROLLED
Data Retention Mode
4.5V
4.5V
Vcc
VCC
tCDR
tR
CS1#
CS1# ≥ VCC -0.2V
DATA RETENTION, CS1# CONTROLLED
FIGURE 6 – DATA RETENTION – CS2 CONTROLLED
Data Retention Mode
4.5V
4.5V
Vcc
VCC
tCDR
tR
CS2
CS2 0.2V
DATA RETENTION, CS2 CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice.
October 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 13
6
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
EDI88130CS
PACKAGE 12 – 32 PIN CERAMIC QUAD LCC
0.120
0.028
0.020 X 45°
REF.
0.060
0.022
0.050
BSC.
0.560
0.540
0.055
0.045
0.040 X 45°
REF.
0.458
0.442
ALL DIMENSIONS ARE IN INCHES
PACKAGE 9 – 32 PIN SIDEBRAZED CERAMIC DIP (600 MILS WIDE)
1.616
1.584
0.620
0.600
0.060
0.040
Pin 1 Indicator
0.200
0.125
0.155
0.115
0.600
NOM
0.020
0.016
0.100
TYP
0.061
0.017
15 x 0.100 = 1.500
ALL DIMENSIONS ARE IN INCHES
PACKAGE 102 – 32 PIN SIDEBRAZED CERAMIC DIP (400 MILS WIDE)
1.616
1.584
0.420
0.400
0.060
0.040
Pin 1 Indicator
0.200
0.125
0.155
0.115
0.020
0.016
0.100
TYP
0.400
NOM
0.061
0.017
15 x 0.100 = 1.500
ALL DIMENSIONS ARE IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
October 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 13
7
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
EDI88130CS
PACKAGE 140 – 32 LEAD CERAMIC SOJ
0.108
0.088
0.840
0.820
0.040
0.030
0.050
TYP
0.440
0.379
REF
0.155
0.120
ALL DIMENSIONS ARE IN INCHES
PACKAGE 141 – 32 PAD CERAMIC LCC
0.096
0.080
0.028
0.022
0.840
0.820
0.050
TYP
0.405
0.395
ALL DIMENSIONS ARE IN INCHES
PACKAGE 142 – 32 PIN CERAMIC FLATPACK
0.830
0.810
0.007
0.370
0.003
0.250
1.00 REF
0.290
0.270
0.420
0.400
0.040
0.030
Pin 1
0.019
0.015
0.045
0.020
0.116
0.100
0.050
TYP
ALL DIMENSIONS ARE IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
October 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 13
8
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
EDI88130CS
ORDERING INFORMATION
EDI 8 8130 CS X X X
MICROSEMI CORPORATION
SRAM
ORGANIZATION, 128Kx8
(130 = Dual CS)
TECHNOLOGY:
CS = CMOS Standard Power (5V)
LPS = Low Power
ACCESS TIME (ns)
PACKAGE TYPE:
C
F
L
= 32 lead Sidebrazed DIP, 600 mil (Package 9)
= 32 lead Ceramic Flatpack (Package 142)
= 32 pad Ceramic LCC (Package 141)
L32 = 32 pad Ceramic Quad LCC (Package 12)
N
T
= 32 lead Ceramic SOJ (Package 140)
= 32 lead Sidebrazed DIP, 400 mil (Package 102)
DEVICE GRADE:
B
= MIL-STD-883 Compliant
M = Military Screened -55°C to +125°C
I
= Industrial
-40°C to +85°C
0°C to +70°C
C
= Commercial
Microsemi Corporation reserves the right to change products or specifications without notice.
October 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 13
9
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
EDI88130CS
Document Title
128Kx8 Monolithic SRAM, SMD 5962-89598
Revision History
Rev # History
Release Date Status
Rev 12
Changes (Pg. 1-10)
March 2011
Final
12.1 Change document layout from White Electronic Designs to Microsemi
12.2 Add document Revision History page
Rev 13
Changes (Pg. 2)
October 2011
Final
13.1 Change WE# to WE# = VIH for Icc1 in the DC Characteristics chart
13.2 Add 'f = 0' to Icc2 in the DC Characteristics chart
13.3 Add 'f = 0' to Icc3 in the DC Characteristics chart
Microsemi Corporation reserves the right to change products or specifications without notice.
October 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 13
10
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
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MICROSEMI
EDI88130CS17CB
Standard SRAM, 128KX8, 17ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
MICROSEMI
EDI88130CS17CC
Standard SRAM, 128KX8, 17ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
MICROSEMI
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