GC9921-TSR-129B [MICROSEMI]

Mixer Diode, Low Barrier, KU Band to K Band, Silicon,;


型号：	GC9921-TSR-129B
厂家：	Microsemi
描述：	Mixer Diode, Low Barrier, KU Band to K Band, Silicon,
文件：	总5页 (文件大小：614K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Schottky Devices

MONOLITHIC SCHOTTKY DIODES FOR MIXERS TO 26.5 GHz

• Low Capacitance. For Applications to 26.5 GHz

• Silicon Dioxide / Silicon Nitride Passivation

• Monolithic Glass Support Design

• Ultra-Low through High Barrier

Heights

• Monolithic Design Insures Matched

Junctions

• Wafer Level “SPC”

DESCRIPTION

New Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad

configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic

packages. Monolithic devices are recommended for highest frequency, broadband designs. The beamlead design

eliminates the problems associated with wire bonding very small junction devices thus improving reliability and

performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion

loss through Ku Band. A broad range of unique metalization schemes produce Microsemi’s complete line of barrier

heights. Diodes are currently available with barrier heights as low as 240 mV and up to 625 mV per junction. By

optimizing epitaxy and metalization, these devices achieve the lowest Rs-Cj products resulting in exceptional

conversion loss performance. “High Rel” screening is available on packaged devices per your requirements.

APPLICATIONS

SCHOTTKY Barrier diodes are suitable for a variety of circuit applications ranging from single ended RF mixers to low

level high speed switching. The monolithic beamlead design minimizes parasitic inductance and capacitance insuring

repeatable performance through Ku band. Single junction devices such as the style ‘S12’ are well suited for RF Mixers,

level detectors, phase detectors, modulators, etc. With junction capacitances as low as .06 pF, Monolithic Quads are

ideally suited for broadband double balanced mixer designs through 26.5 GHz. The Ultra-Low Barrier devices (GC9900

Series) are designed for mixers with low or starved Local Oscillator levels where optimal conversion loss is a must. High

barrier diodes, (GC9940 Series) are designed for applications where high drive levels are available, such as, Doppler

mixers or motion detection. Schottky diodes are available in Ultra-Low, Medium and High Drive levels to fit virtually any

circuit requirement.

Microsemi – Lowell

75 Technology Drive, Lowell, MA 01851 Tel. (978) 442-5600

Schottky Devices

MONOLITHIC SCHOTTKY DIODES FOR MIXERS TO 26.5 GHz

TABLE 1: ELECTRICAL SPECIFICATIONS AT T_A=25°C

Z_if⁶typ

FREQ.

V_b1 min

C_j²max

(pF)

V_fmax

R_dmax

Nf_ssp

P/N

BARRIER

RANGE

(V)

(mV)

340

310

300

280

(Ω)

TYP (dB)

6.50

(Ω)

GC9901

GC9902

GC9903

GC9904

Ku-Ka

0.10

20.0

16.0

14.0

12.0

ULTRA-

LOW

0.15

6.00

2.0

140

170

0.30

5.50

Ku-Ka

0.50

5.50

GC9911

GC9912

GC9913

GC9914

0.10

0.15

0.30

0.50

360

350

340

330

20.0

16.0

14.0

12.0

6.50

6.00

5.50

LOW

GC9921

GC9922

GC9923

GC9924

GC9931

GC9932

GC9933

GC9934

GC9941

GC9942

GC9943

GC9944

Ku-Ka

0.10

0.15

0.30

0.50

0.10

0.15

0.30

0.50

0.10

0.15

0.30

0.50

470

460

440

420

550

540

530

510

660

640

630

610

20.0

16.0

14.0

12.0

20.0

16.0

14.0

12.0

20.0

16.0

14.0

12.0

6.50

6.00

5.50

6.75

6.25

5.75

5.50

7.00

6.25

5.75

LOW-MED

MEDIUM

HIGH

2.0

3.0

4.0

200

250

300

Ku-Ka

CONDITIONS

MAXIMUM RATING

T_oper: -65 to 150°C

1. V b measured at 10µA (N/A on ring quads).

2. 0 Volts, F=1 MHz (diagonal leads on quads).

3. I f = 1.0 mA

T_stg: -65 to 170°C

Power Handling: 100 mW

4. I f = 5.0 mA

(Derate Linearly to zero at 150°C)

5. L.O. = 0 dBm, N_if= 1.5 dB, F = 10 GHz

6. L.O. = 0 dBm

NOTE

When ordering, specify appropriate package style.

Specifications subject to change without notice.

Microsemi – Lowell

75 Technology Drive, Lowell, MA 01851 Tel. (978) 442-5600

Schottky Devices

Microsemi – Lowell

75 Technology Drive, Lowell, MA 01851 Tel. (978) 442-5600

Schottky Devices

Dimensions in inches.

Specifications subject to change without notice

Other packages and configurations available. Consult factory for details.

Microsemi – Lowell

75 Technology Drive, Lowell, MA 01851 Tel. (978) 442-5600

Schottky Devices

Microsemi – Lowell

75 Technology Drive, Lowell, MA 01851 Tel. (978) 442-5600

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