GC9983-129C [MICROSEMI]
Mixer Diode,;
| 型号： | GC9983-129C |
| 厂家： | 
Microsemi |
| 描述： | Mixer Diode, 二极管 |
| 文件： | 总2页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GC9981 – GC9989
Schottky Barrier Diodes
Ultra High Drive Monolithic
®
TM
RoHS Compliant
DESCRIPTION
KEY FEATURES
Microsemi’s Schottky Barrier devices are currently available in the eight
junction ring quad configuration. Devices are available in monolithic form for
hybrid applications as well as in hermetic or non-hermetic packages.
Monolithic devices are recommended for highest frequency, broadband
designs. The beamlead design eliminates the problems associated with wire
bonding very small junction devices thus improving reliability and
performance in MIC applications. Our in house epitaxy process capability
insures repeatability for lowest conversion loss through Ku Band. A broad
range of unique metallization schemes produce Microsemi’s complete line of
barrier heights. Diodes are available with barrier heights ranging from 600 mV
to 1300 mV per leg. By optimizing epitaxy and metallization, these devices
achieve lowest Rs-Cj products resulting in exceptional conversion loss
performance. “High Rel” screening is available on packaged devices per your
requirements.
. Monolithic Design for Lowest
Parasitics and Matched Junction
Characteristics
. Low Noise Figure
. Suitable for Applications to 26.5
GHz
. Excellent Conversion Loss
. Available High and Ultra-High
Barrier Heights
. Can be Supplied as Monolithic
Devices for Hybrid Applications or
as Packaged Devices
This series of devices meets RoHS requirements per EU Directive
2002/95/EC.
. RoHS Compliant1
APPLICATIONS
1 These devices are supplied with Gold
plated terminations. Consult factory for
details.
Schottky Barrier diodes are suitable for a variety of circuit applications
ranging from double balanced RF mixers to high speed switching and
modulation. The monolithic beamlead design minimizes parasitic inductance
and capacitance insuring repeatable performance through Ka band. With
junction capacitances as low as 0.06 pF. Monolithic 8 junction quads are
ideally suited for broad band high drive mixers through 26.5 GHz.
APPLICATIONS/BENEFITS
. RF Mixers
Ultra-High barrier diodes, (GC9980 Series) are designed for applications
where high drive levels are available, such as, Doppler mixers or motion
detection. Microsemi also has Schottky diodes available in Ultra-Low,
Medium and High Drive levels to fit virtually any circuit requirement.
. Double Balanced Mixers
. High Speed Switching
. Motion Detection
. Phase Detectors
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Maximum Power Handling
Storage Temperature
P
100
mW
ºC
TSTG
-65 to +175
Operating Temperature
TOP
-65 to +150
ºC
IMPORTANT:
For the most current data, consult our web site: www.microsemi.com
Specifications are subject to change, consult the factory for further information.
These devices are ESD sensitive and must be handled use using ESD precautions.
Microsemi
Page 1
Copyright 2007
Rev: 2009-01-19
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GC9981 – GC9989
Schottky Barrier Diodes
Ultra High Drive Monolithic
®
TM
RoHS Compliant
.
CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
VB(V)2
CJ(pF)3
VF(mV)
RD(Ω)
NFSSB
Model1
Barrier
Height
Freq
Range
4
(db)
IR=10μA
(Min)
@0V
@1 mA
@10 mA
Number
(Max)
0.08
0.12
0.15
0.08
0.12
0.15
0.08
0.12
0.15
(Max)
800
(Max)
25
(Typ)
7
GC9981
GC9982
GC9983
GC9984
GC9985
GC9986
GC9987
GC9988
GC9989
Ku-Ka
X
C
Ku-Ka
X
C
Ku-Ka
X
VERY
HIGH
4.0
780
750
20
15
25
20
15
25
20
15
6.5
6.5
7
6.5
6.5
7
1050
1000
950
1300
1250
1200
EXTRA
HIGH
5.0
6.0
ULTRA
HIGH
6.5
6.5
C
Notes
1. When ordering, specify appropriate package style.
IE: Order GC9981-8JR for Monolithic 8 Junction Ring Quad.
2. VB measured at 10µA on a sample basis only for ring quads.
3. 0 Volts, F=1 MHz (diagonal leads on quads).
4. L.O. = 0 dBm, Nif = 1.5 dB, F = 10 GHz or 3 GHz
PACKAGE STYLE 8JR
PACKAGE STYLE 8JB
PACKAGE STYLE 129C
PACKAGE STYLE 174C
MORE PACKAGE STYLE AVAILABLE ON REQUEST
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
Copyright 2007
Rev: 2009-01-19
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