GMP-5AE3 [MICROSEMI]
Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2;
| 型号： | GMP-5AE3 |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2 局域网 二极管 |
| 文件： | 总2页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GMP-5, GMP-5A, GMP-5B, e3 SERIES
TRANSIENT ABSORPTION ZENER
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
The GMP-5 series is a low voltage Transient Voltage Suppressor designed
for the protection of integrated circuits with very low Clamping Voltages (VC).
Due to their very fast response time, protection level and high discharge
capability, they are extremely effective in providing protection against 5-volt
line transients generated by: voltage reversals, capacitive or inductive load
switching, electromechanical switching, electrostatic discharge and
electromagnetic coupling.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
500 Watts Peak Pulse Power dissipation.
Working Voltage of 5 volts
•
The GMP-5 is a low voltage transient suppressor
designed for the protection of integrated circuits.
Characterized by a very low clamping voltage
together with a low standoff voltage, GMP-5’s afford
a high degree of protection to: TTL, ECL, DTL,
MOS, CMOS, VMOS, HMOS, NMOS and static
memory circuits susceptible to 5-volt line transients.
Protects TTL, ECL, DTL, MOS, CMOS, and MSI
Integrated circuits.
•
•
Low clamping factor
RoHS Compliant devices available by adding “e3” suffix
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
•
•
•
500 Watts of Peak Pulse Power dissipation at
25oC.
•
CASE: Void free transfer molded thermosetting
plastic.
tclamping (0 volts to BV min.): Less than 1x10-12
seconds (theoretical)
•
FINISH: Tin-lead or RoHS Compliant matte-Tin
plating solderable per MIL-STD-750, method 2026
Operating and Storage Temperatures: -65oC to
•
•
•
POLARITY: Band denotes cathode.
WEIGHT: 0.7 gram (approx.)
MOUNTING POSITION: Any.
+175oC.
Forward surge rating: 50 amps 1/120 second at
25oC.
Steady State power dissipation: 5.0 W @ TL =
75oC, Lead Length = 3/8”
Repetition rate (duty cycle): .05%
ELECTRICAL CHARACTERISTICS @ 25oC
MINIMUM
MAXIMUM
CLAMPING
VOLTAGE
@ IPP1 = 1A
(Fig. 2)
MAXIMUM
CLAMPING
VOLTAGE
@ IPP2 = 1A
(Fig. 2)
MAXIMUM
PEAK
PULSE
CURRENT
(Fig 2)
MAXIMUM
REVERSE
LEAKAGE
@VWM
BREAKDOWN
VOLTAGE
@ 1mA
MAXIMUM
PEAK PULSE
CURRENT
STAND OFF
VOLTAGE
Note 1
MICROSEMI
PART
V (min)
ID
(1.2x50 μsec )
VWM
V(BR)
VC
VC
IPP3
NUMBER
Volts
μA
Volts
Volts
Volts
Amps
Amps
GMP – 5
GMP – 5A
GMP – 5B
5.0
5.0
5.0
300
100
300
5.3
5.5
5.3
6.7
6.7
6.4
6.9
6.9
6.6
70
70
70
215
215
215
Vf at 50 amps peak, 8.3 msec sine wave = 3.5 volts maximum
NOTE 1: A TVS is usually selected according to the reverse “Stand Off Voltage” (VWM) which should be equal to or greater than the DC or
continuous peak operating voltage level.
Copyright © 2007
7-09-2007 REV A
Microsemi
Scottsdale Division
Page 1
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
GMP-5, GMP-5A, GMP-5B, e3 SERIES
TRANSIENT ABSORPTION ZENER
S C O T T S D A L E D I V I S I O N
OUTLINE AND CIRCUIT
Test wave form
parameters
tr = 10μsec.
tp = 1000μsec.
Pulse Time
FIGURE 1
FIGURE 2
Pulse Wave Form
Peak Pulse Power vs. Pulse Time
DIMENSIONS
T – Temperature – oC
FIGURE 3
FIGURE 4
Derating Curve
Typical Characteristic Clamping Voltage
(VC) vs. Peak Pulse Current (IPP)
Copyright © 2007
7-09-2007 REV A
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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