GP800DDS12-ABC [MICROSEMI]

Insulated Gate Bipolar Transistor, 1050A I(C), 1200V V(BR)CES, N-Channel;


型号：	GP800DDS12-ABC
厂家：	Microsemi
描述：	Insulated Gate Bipolar Transistor, 1050A I(C), 1200V V(BR)CES, N-Channel 局域网电动机控制栅晶体管
文件：	总11页 (文件大小：86K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GP800DDS12-ABC

Powerline N-Channel IGBT Module

DS5172-1.2 May 1999

The GP800DDS12-ABC is a single switch 1200V,

robust n channel enhancement mode insulated gate

bipolar transistor (IGBT) module. Designed for low power

loss, the module is suitable for a variety of high voltage

applications in motor drives and power conversion. The

high impedance gate simplifies gate drive considerations

enabling operation directly from low power control

circuitry.

Key Parameters

V_CES

V_CE(sat)

I_C

1200V

2.7V

(typ)

(max)

800A

1600A

I_C(PK)

Fast switching times allow high frequency operation

making the device suitable for the latest drive designs

employing pwm and high frequency switching. The IGBT

has a wide reverse bias safe operating area (RBSOA) for

ultimate reliability in demanding applications.

These modules incorporate electrically isolated base

plates and low inductance construction enabling circuit

designers to optimise circuit layouts and utilise earthed

heat sinks for safety.

The powerline range of high power modules includes

dual and single switch configurations with a range of

current and voltage capabilities to match customer system

demands.

Typical applications include dc motor drives, ac pwm

drives, main traction drives and auxiliaries, large ups

systems and resonant inverters.

Outline type code: F

Features

(See package details for further information)

■ n - Channel.

Fig. 1 Electrical connections - (not to scale)

■ Enhancement Mode.

■ High Input Impedance.

■ Optimised For High Power High Frequency Operation.

■ Isolated Base.

3/4(E)

8(E¹)

1/2(C)

7(C¹)

■ Full 1200V Capability.

■ 800A Per Arm.

9(G¹)

Fig.2 Single switch circuit diagram

Applications

Ordering Information

Order As: GP800DDS12-ABC

■ High Power Switching.

■ Motor Control.

■ Inverters

Note: When ordering, please use the whole part number.

■ Traction Systems.

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/11

GP800DDS12-ABC

Absolute Maximum Ratings - Per Arm

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In

extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package.

Appropriate safety precautions should always be followed.

T_case= 25˚C unless stated otherwise.

Symbol

V_CES

V_GES

I_C

Parameter

Collector-emitter voltage

Gate-emitter voltage

Collector current

Test Conditions

Max.

1200

±20

Units

V_GE= 0V

DC, T_case= 25˚C

DC, T_case= 75˚C

1050

800

1ms, T_case= 75˚C

1600

I_C(PK)

P_max

V_isol

Maximum power dissipation

Isolation voltage

6000

2500

T_case= 25˚C (Transistor)

Commoned terminals to base plate.

AC RMS, 1 min, 50Hz

Thermal And Mechanical Ratings

Symbol

R_th(j-c)

Parameter

Conditions

Min. Max. Units

Thermal resistance - transistor (per arm) DC junction to case

21 ^oC/kW

40 ^oC/kW

Thermal resistance - diode (per arm)

DC junction to case

R_th(j-c)

Mounting torque 5Nm

(with mounting grease)

Thermal resistance - Case to heatsink

(per module)

^oC/kW

R_th(c-h)

T_j

Transistor

150

125

^oC

Junction temperature

Diode

T_stg

Storage temperature range

Screw torque

–40

^oC

Mounting - M6

Electrical connections - M4

Electrical connections - M8

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

2/11

GP800DDS12-ABC

Electrical Characteristics

T_case= 25˚C unless stated otherwise.

Symbol

Parameter

Collector cut-off current

Conditions

V_GE= 0V, V_CE= V_CES

Min. Typ. Max.

Units

I_CES

V_GE= 0V, V_CE= V_CES, T_case= 125˚C

V_GE= ±20V, V_CE= 0V

I_C= 40mA, V_GE= V_CE

I_GES

Gate leakage current

Gate threshold voltage

±4

7.5

3.5

4.0

µA

V_GE(TH)

_GE= 15V, I_C=800A

2.7

3.2

V_CE(SAT)

Collector-emitter saturation voltage

V_GE= 15V, I_C= 800A, T_case= 125˚C

I_F

Diode forward current

800

t_p= 1ms

I_FM

Diode maximum forward current

1600

V_F

Diode forward voltage

I_F= 800A

1.8

2.3

2.4

I_F= 800A, T_case= 125˚C

C_ies

L_M

Input capacitance

Module inductance

V_CE= 25V, V_GE= 0V, f = 1MHz

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

3/11

GP800DDS12-ABC

Inductive Switching Characteristics

For definition of switching waveforms, refer to figure 3 and 4.

T_case= 25˚C unless stated otherwise

Symbol

t_d(off)

Parameter

Turn-off delay time

Conditions

Min. Typ. Max. Units

1100 1300

t_f

Fall time

150

130

200

170

I_C= 800A

V_GE= ±15V

E_OFF

Turn-off energy loss

V_CE= 600V

t_d(on)

t_r

Turn-on delay time

Rise time

800

320

900

400

130

R_G(ON)= R_G(OFF)= 3.3Ω

L ~ 100nH

E_ON

Turn-on energy loss

I_F= 800A

V_R= 50%V_CES

dI_F/dt = 2000A/µs

Q_rr

200

150

170

µC

Diode reverse recovery charge

T_case= 125˚C unless stated otherwise.

t_d(off)

t_f

E_OFF

t_d(on)

Turn-off delay time

Fall time

1300 1500

200

170

250

I_C= 800A

V_GE= ±15V

Turn-off energy loss

Turn-on delay time

V_CE= 600V

950 1200

R_G(ON)= R_G(OFF)= 3.3Ω

L ~ 100nH

t_r

Rise time

350

150

200

225

450

200

260

E_ON

Turn-on energy loss

I_F= 800A

V_R= 50%V_CES

dI_F/dt = 2000A/µs

µC

Q_rr

Diode reverse recovery charge

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

4/11

GP800DDS12-ABC

Switching Definitions

+15V

V_ge

10%

-15V

t₄+ 5µs

I_C

E_on

∫

V_ce.I_cdt

90%

10%

t₁

t_d(on)= t₂- t₁

t_r= t₃- t₂

V_ce

t₁

t₄

t₃

t₂

Fig.3 Definition of turn-on switching times

+15V

90%

V_ge

-15V

t₇+ 5µs

E_off

∫

V_ce.I_cdt

90%

10%

t₅

t_d(off)= t₆- t₅

t_f= t₇- t₆

I_C

V_ce

t₅

t₆

t₇

Fig.4 Definition of turn-off switching times

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

5/11

GP800DDS12-ABC

Curves

V_ge= 20/15/12/10V

1600

1400

1200

1000

800

Common emitter

T_case= 125˚C

_case= 25˚C

1400

1200

1000

800

600

400

200

400

200

1.0

2.0

3.0

4.0

5.0

1.0

2.0

3.0

4.0

5.0

Collector-emitter voltage, V_ce- (V)

Fig.5 Typical output characteristics

Fig.6 Typical output characteristics

220

200

180

160

140

120

100

160

140

120

100

Conditions:

T_case= 125˚C,

Conditions:

T_case= 25˚C,

V_CE= 600V,

_CE= 600V,

_GE= ±15V

A : R_g= 6.8Ω

B : R_g= 4.7Ω

C : R_g= 3.3Ω

A : R_g= 6.8Ω

B : R_g= 4.7Ω

C : R_g= 3.3Ω

100

200

300

400

500 600

700 800

100

200

300

400

500

600

700

800

Collector current, I_C- (A)

Fig.7 Typical turn-on energy vs collector current

Fig.8 Typical turn-on energy vs collector current

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

6/11

GP800DDS12-ABC

180

160

140

120

100

250

200

150

100

Conditions:

T_case= 25˚C,

V_CE= 600V,

Conditions:

T_case= 125˚C,

V_CE= 600V,

_GE= ±15V

A : R_g= 6.8Ω

B : R_g= 4.7Ω

C : R_g= 3.3Ω

A : R_g= 6.8Ω

B : R_g= 4.7Ω

C : R_g= 3.3Ω

100

200

300

400

500

600

700

800

100

200

300

400

500

600

700

800

Collector current, I_C- (A)

Fig.9 Typical turn-off energy vs collector current

Fig.10 Typical turn-off energy vs collector current

2000

Conditions:

_case= 125˚C,

_CE= 600V

V_GE= 15V

R_g= 3.3Ω

_CE= 600V,

_GE= 15V,

1800

1600

1400

1200

1000

800

600

400

200

T_case= 125˚C

R_g= 3.3Ω

t_d(off)

t_f

t_d(on)

T_case= 25˚C

t_r

200

400

Collector current, I_C(A)

600

800

100

200

300

400

500

600

700

800

Collector currrent, I_C- (A)

Fig.11 Typical diode reverse recovery charge vs collector current

Fig.12 Typical switching characteristics

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

7/11

GP800DDS12-ABC

1600

1400

1200

1000

800

2000

1800

1600

1400

1200

1000

800

600

400

T_j= 125˚C

400

200

T_case= 125˚C

_ge= ±15V

R_g= 3.3Ω*

T_j= 25˚C

200

*Recommended minimum value

0.5

1.5

2.5

1000

1200

600

Collector-emitter voltage, V_ce- (V)

200

400

800

Forward voltage, V_F- (V)

Fig.13 Diode typical forward characteristics

Fig.14 Reverse bias safe operating area

10000

100

Diode

I_Cmax. (single pulse)

Transistor

1000

100

0.1

10000

100

1000

100

1000

10000

Pulse width, t_p- (ms)

Collector-emitter voltage, V_ce- (V)

Fig.15 Forward bias safe operating area

Fig.16 Transient thermal impedance

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

8/11

GP800DDS12-ABC

2000

1800

1600

1400

1200

1000

800

1200

1000

800

600

400

200

PWM Sine Wave.

Power Factor = 0.9,

Modulation Index = 1

600

400

Conditions:

T_j= 125°C, T_c= 75°C,

R_g= 3.3Ω, V_CC= 600V

200

100

120

140

160

f_max- (kHz)

Case temperature, T_case- (˚C)

Fig.17 3-Phase inverter operating frequency

Fig.18 DC current rating vs case temperature

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

9/11

GP800DDS12-ABC

Package Details

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated

otherwise. DO NOT SCALE.

6x Ø7

14.5

4x M8

6x M4

140

Nominal weight: 1600g

Package outline type: F

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

10/11

GP800DDS12-ABC

http://Lincoln.mitelsemi.com

e-mail: power_solutions@mitel.com

Power Headquarters - United Kingdom

Tel: +44 (0)1522 500500

Fax: +44 (0)1522 500550

North America

UK, Germany, Rest Of World France, Benelux and Spain

Tel: 011-800-5554-5554

Fax: 011-800-5444-5444

Tel: +44 (0)1522 500500

Fax: +44 (0)1522 500020

Tel: +33 (0)1 69 18 90 00

Fax: +33 (0)1 64 46 54 50

ADVANCE INFORMATION - The product design is complete and final characterisation for volume production is well in hand.

Information relating to products and circuits (“Product”) furnished herein by Mitel Corporation or its subsidaries (“Mitel”) is believed to be reliable. However, Mitel assumes no liability for errors

that may appear in this document, or for liability otherwise arising from the application or use of any such information or Product or for any infringement of patents or other intellectual property

rights owned by third parties which may result from such application or use. Neither the supply of such information or the purchase of Product conveys any license, either expressed or

implied, under patents or other intellectual property rights owned by Mitel or licensed from third parties by Mitel, whatsoever. Purchasers of Products are also hereby notified that the use of

Product in certain ways or in combination with Mitel or non-Mitel furnished goods or services may infringe patents or intellectual property rights owned by Mitel. The Products, their

specifications and the information appearing in the document are subject to change by Mitel without notice.

M Mitel (design) is a registered trademark of MITEL Corporation

Mitel Semiconductor is an ISO 9001 Registered Company

Printed in 1999

Publication No. DS5172-1 Issue No 1.2 May 1999 TECHNICAL DOCUMENTATION – NOT FOR RESALE.

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

11/11

GP800DDS12-ABC [MICROSEMI]

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