HSM580GE3 [MICROSEMI]

Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 80V V(RRM), Silicon, DO-215AB, SMCG, 2 PIN;


型号：	HSM580GE3
厂家：	Microsemi
描述：	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 80V V(RRM), Silicon, DO-215AB, SMCG, 2 PIN
文件：	总5页 (文件大小：428K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HSM580e3 – HSM5100e3

Available

5 Amp Schottky Barrier Rectifier

DESCRIPTION

The HSM580, HSM590, and HSM5100 series provides a 5 Amp, 80V-100V Schottky surface

mount rectifier in either J lead or gull wing configuration with low forward voltage and low

leakage current. For critical applications requiring very fast switching, these higher voltage

Schottkys with their “hot carrier” features provide extremely fast switching to replace

conventional ultrafast rectifiers.

DO-215AB

(SMCG) Package

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES



Schottky Barrier Rectifier

Plastic Package

DO-214AB

(SMCJ) Package

Ruggedized Design

175°C Junction Temperature

Guard Ring Protection

NOTE: All SMC series are

equivalent to prior SMM package

identifications.

High Current Capability

V_RRM80 to 100 Volts

Surface Mount Packages

RoHS compliant versions are available with an e3 suffix

APPLICATIONS / BENEFITS



Silicon Schottky (hot carrier) rectifier for minimal t_rrand elimination of reverse-recovery oscillations

to reduce need for EMI filtering

For use in high-frequency switching power supplies, inverters, free wheeling, polarity protection,

and “ORing” applications

Low forward power loss and high efficiency

MAXIMUM RATINGS @ 25 ºC unless otherwise noted

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

1-800-446-1158 or

(978) 620-2600

Parameters/Test Conditions

Storage Temperature

Symbol

T_STG

T_J

Value

-55 to +175

Unit

ºC

Junction Temperature

ºC

Thermal Resistance Junction-to-Ambient ⁽¹⁾

Thermal Resistance Junction-to-Case

Forward Surge Current ⁽²⁾

R_ӨJA

R_ӨJL

I_FSM

ºC/W

Fax: (978) 689-0803

MSC – Ireland

200

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Average Rectified Forward Current @ T_L= 75 ºC

(Square wave)

I_F(AV)

5.0

Solder Temperature @ 10 s

260

^oC

Notes: 1. On PCB with FR4 using 2 oz copper and recommended mounting pad size (see pad layout).

Website:

www.microsemi.com

2. At 8.3 ms single half-sine waveform superimposed on rated load (JEDEC method).

RF01188, Rev A (8/19/15)

Page 1 of 5

HSM580e3 – HSM5100e3

MECHANICAL and PACKAGING



CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.

TERMINALS: RoHS compliant annealed matte-tin plating. Readily solderable per MIL-STD-750, method 2026.

POLARITY: Indicated by cathode band

TAPE-AND-REEL: Standard per EIA-481-B (add “TR” suffix to part number). Consult factory for quantities.

WEIGHT: Approximately 0.22 grams

See Package Dimensions on last page.

PART NOMENCLATURE

HSM 5 80

Surface Mount

RoHS Compliance

e3= RoHS compliant

5 Amp Forward Current

80V V_RWM

Blank= non RoHS compliant

Lead Form

J= J-bend

G= Gull-wing

SYMBOLS & DEFINITIONS

Definition

Symbol

Total Capacitance: The total small signal capacitance between the diode terminals of a complete device.

C_T

I_F

Forward Current: The forward current dc value, no alternating component.

I_FSM

Maximum Forward Surge Current: The forward current, surge peak or rated forward surge current.

Average Rectified Forward Current: The current averaged over a full cycle with a 180 degree conduction angle (square

wave).

I_F(AV)

I_R

Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.

Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.

Reverse Voltage: The reverse voltage dc value, no alternating component.

V_F

V_R

Repetitive Peak Reverse Voltage: The peak reverse voltage including all repetitive transient voltages but excluding all

non-repetitive transient voltages.

V_RRM

V_RWM

Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range

excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV.

ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated

Reverse

Current

I_R

Working

Peak

Reverse

Voltage

V_RWM

Repetitive

Peak

Reverse

Voltage

V_RRM

Max. Surge

Current

I_FSM

@ 8A

@ 8.3ms

Peak

Forward

Voltage

V_F@ 5 A

V_FM

Capacitance

@ 5 V

@V_RWM

PART

NUMBER

Volts

MAX

Volts

MAX

Amps

MAX

Volts

MAX

µA

MAX

Typical

HSM580

HSM590

HSM5100

250

200

.80

280

100

RF01188, Rev A (8/19/15)

Page 2 of 5

HSM580e3 – HSM5100e3

GRAPHS

RF01188, Rev A (8/19/15)

Page 3 of 5

HSM580e3 – HSM5100e3

PACKAGE DIMENSIONS

SMCG (DO-215AB)

Dimensions

Inch Millimeters

Ltr

Min

Max

.123

.280

.245

.095

.400

.040

Min

2.97

6.60

5.59

1.91

9.65

0.640

Max

3.12

7.11

6.22

2.41

10.16

1.02

.117

.260

.220

.075

.380

.025

SMCJ (DO-214AB)

Dimensions

Ltr

Inch

Millimeters

Min

.117

.260

.220

.307

.075

.030

Max

.123

.280

.245

.322

.095

.060

Min

2.97

6.60

5.59

7.80

1.91

.760

Max

3.12

7.11

6.22

8.18

2.41

1.52

RF01188, Rev A (8/19/15)

Page 4 of 5

HSM580e3 – HSM5100e3

PAD LAYOUT

SMCG (DO-215AB)

Ltr

Inch

.510

.110

.150

Millimeters

12.95

2.79

3.81

SMCJ (DO-214AB)

Ltr

Inch

.390

.110

.150

Millimeters

9.90

2.79

3.81

RF01188, Rev A (8/19/15)

Page 5 of 5

HSM580GE3 [MICROSEMI]

相关型号：

HSM580GE3/TR13

HSM580J

HSM580J/TR13

HSM580JE3

HSM580JE3/TR13

HSM59

HSM59-1.80MHZ

HSM59-80.00MHZ

HSM590

HSM590G

HSM590G/TR13

HSM590J