HUM2020SME3 [MICROSEMI]
Pin Diode, Silicon, HERMETIC SEALED, MELF-2;
| 型号： | HUM2020SME3 |
| 厂家： | 
Microsemi |
| 描述： | Pin Diode, Silicon, HERMETIC SEALED, MELF-2 |
| 文件： | 总5页 (文件大小：349K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HUM2001/HUM2020 SERIES
Pin Diode High Power Stud
KEY FEATURES
DESCRIPTION
With high isolation, low loss, and low distortion characteristics, this
Microsemi Power PIN diode is perfect for the high power switching
applications where size and power handling capability are critical.
Its advantages also include the low forward bias resistance and high zero
bias impedance that are essential for low loss, high isolation and wide
bandwidth performance.
ꢀ High Power Stud Mount Package.
ꢀ High Zero Bias Impedance
ꢀ Very Low Inductance and
Capacitance.
ꢀ No Internal Lead Straps.
ꢀ Small Mechanical Outline.
Hermetically sealed, SOGO passivated PIN chips with full-faced metallurgical
bonds on both sides to achieve high reliability and high surge capability.
APPLICATIONS/BENEFITS
ꢀ
ꢀ
MRI Applications.
High Power Antenna Switching.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
VOLTAGE RATING [25°C]
Reverse
Part type
Voltage
(VR) – Volts
IR = 10µA
100V
HUM2001
HUM2005
HUM2010
HUM2015
HUM2020
Style “D”
Style “C”
Stud
Style “B”
Style “SM”
Melf
500V
Insulated Stud
Round Axial Leads
1000V
1500V
2000V
Maximum Ratings @ 25ºC
(UNLESS OTHERWISE SPECIFIED)
TYPE
Parameter
S ymb o l
HUM2001
HUM2005
HUM2010
HUM2015
HUM2020
Unit
Maximum Reverse
Voltage
TRWM
100
500
1000
1500
2000
V
Average Power
Dissipation
IO
13
13
13
13
13
W
A
@ Stud =50°C
Non-Repetitive
Sinusoidal Surge
Current (8.3 ms)
Storage
I
100
100
100
100
100
-65 to
+175
-65 to
+175
-65 to
+175
-65 to
+175
-65 to
+175
Temperature
Range
TSTG
TSTG
RθJC
°C
Operating
-55 to
+150
-55 to
+150
-55 to
+150
-55 to
+150
-55 to
+150
Temperature
Range
°C
Thermal resistance
Junction-to Case
“C” Stud only
7.5
7.5
7.5
7.5
7.5
°C/W
Copyright 2000
MSCXXXX.PDF 2002-08-08
Microsemi
Page 1
HUM2001/HUM2020 SERIES
Pin Diode High Power Stud
PRODUCT PREVIEW/PRELIMINARY
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ.
0.10
3.4
Max
0.20
4.0
Units
Ω
F= 4 MHz, If = 0.5 A
F= 1 MHz, 100 V
VR @ Rated Voltage
If = 10 mA/ 100 V
F= 10 MHz, 100 V
If = 0.5 A
Diode Resistance
Capacitance CT
Reverse Current
Carrier Lifetime
Parallel Resistance
Forward Voltage
RS
CT
IR
pF
10
µA
µs
10
200
30
τ
RP
Vf
kΩ
V
0.85
1.0
HUM2010, 15, 20
HUM2010, 15, 20
TYPICAL
TYPICAL
1
16
12
8
10
0
10
-1
10
4
-2
10
0
-1
0
1
2
0
1
2
3
10
10
10
10
10
10
10
10
Vr (V)
If (mA)
HUM2010, 15, 20
TYPICAL
HUM2010, 15, 20
TYPICAL
1
10
6
5
4
3
2
1
0
10
10
10
10
10
10
10
1
MHz
0
10
-1
10
-2
10
100 MHz
-3
10
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Vf (V)
0
10
20
30
40
50
60
70
80
90
100
Vr (V)
Copyright 2000
Microsemi
Page 2
MSCXXXX.PDF 2002-08-08
HUM2001/HUM2020 SERIES
Pin Diode High Power Stud
PRODUCT PREVIEW/PRELIMINARY
STYLE “C” STUD
STYLE “D” INSULATED STUD
Copyright 2000
Microsemi
Page 3
MSCXXXX.PDF 2002-08-08
HUM2001/HUM2020 SERIES
Pin Diode High Power Stud
PRODUCT PREVIEW/PRELIMINARY
STYLE “SM” MELF
STYLE “B” ROUND AXIAL LEADS
Note: Add Style Letter to Suffix of Part Number to Define Device Configuration,
Example: (i.e. HUM2001 C)
Copyright 2000
MSCXXXX.PDF 2002-08-08
Microsemi
Page 4
HUM2001/HUM2020 SERIES
Pin Diode High Power Stud
PRODUCT PREVIEW/PRELIMINARY
Copyright 2000
Microsemi
Page 5
MSCXXXX.PDF 2002-08-08
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