HUMX2020CR [MICROSEMI]
Pin Diode, 2000V V(BR),;
| 型号： | HUMX2020CR |
| 厂家： | 
Microsemi |
| 描述： | Pin Diode, 2000V V(BR), |
| 文件： | 总4页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HUM2001 – HUM2020
®
PIN DIODE
High Power Stud
TM
RoHS Compliant Versions Available
KEY FEATURES
DESCRIPTION
With high isolation, low loss, and low distortion characteristics,
this Microsemi Power PIN diode is perfect for the high power
switching applications where size and power handling capability
are critical.
. High Power Stud Mount
Package.
. High Zero Bias Impedance
. Very Low Inductance and
Capacitance.
Its advantages also include the low forward bias resistance and
high zero bias impedance that are essential for low loss, high
isolation and wide bandwidth performance.
. No Internal Lead Straps.
. Small Mechanical Outline.
. RoHS compliant packaging
Available1
Hermetically sealed, SOGO passivated PIN chips with full-faced
metallurgical bonds on both sides are utilized to achieve high
reliability and high surge capability.
IMPORTANT:
For the most current data, consult our website: www.MICROSEMI.com
VOLTAGE RATINGS
@ 25C (unless otherwise specified)
Part Number
HUM2001
HUM2005
HUM2010
HUM2015
HUM2020
Reverse Voltage @ 10uA (V)
100
500
1000
1500
2000
APPLICATIONS/BENEFITS
. MRI Applications.
. High Power Antenna Switching.
1
The HUM2000 series of products can be
supplied with a RoHS compliant finish.
Order HUMX2001 – HUMX2020.
Consult factory for details.
Microsemi
Page 1
Copyright 2006
Rev: 2009-05-14
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
HUM2001 – HUM2020
®
PIN DIODE
High Power Stud
TM
RoHS Compliant Versions Available
ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
Parameter
Symbol
Conditions
MIN. TYPICAL MAX.
Units
Total Capacitance
CT
VR = 100V, F = 1 MHz
3.4
0.1
30
4.0
0.2
pF
Series Resistance
Carrier Lifetime
RS
TL
IR
IF = 500 mA, F = 4 MHz
IF = 10 mA/100 V
VR = Voltage rating
f = 10MHz, VR = 100V
IF = 500mA
Ohms
μs
10
Reverse Current
Parallel Resistance
Forward Voltage
10
μA
RP
VF
200
kOhms
V
0.85
1.0
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Parameter
Units
Symbol
Limits
13
W
A
Average Power Dissipation
PD
100
Non-Repetitive Sinusoidal Surge Current (8.3 ms)
I
-65 to + 175
-65 to + 175
°C
°C
Storage Temperature Range
Operating Temperature Range
TSTG
TOP
Thermal resistance Junction-to Case
“C” Stud Only
7.5
°C/W
RθJC
Microsemi
Page 2
Copyright 2006
Rev: 2009-05-14
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
HUM2001 – HUM2020
®
PIN DIODE
High Power Stud
TM
RoHS Compliant Versions Available
TYPICAL RS VS IF
TYPICAL CT VS VR
IF CURVE
RP VS VOLTAGE
Microsemi
Page 3
Copyright 2006
Rev: 2009-05-14
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
HUM2001 – HUM2020
®
PIN DIODE
High Power Stud
TM
RoHS Compliant Versions Available
PACKAGE STYLE ‘B’
PACKAGE STYLE ‘C’
PACKAGE STYLE ‘D’
PACKAGE STYLE ‘SM’
Ordering Information:
Add style letter to suffix for the desired package. IE: HUM2020D
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 4
Copyright 2006
Rev: 2009-05-14
相关型号：
©2020 ICPDF网 联系我们和版权申明