ICTE-8C/TR12 [MICROSEMI]
Trans Voltage Suppressor Diode, 8V V(RWM), Bidirectional,;型号: | ICTE-8C/TR12 |
厂家: | Microsemi |
描述: | Trans Voltage Suppressor Diode, 8V V(RWM), Bidirectional, |
文件: | 总3页 (文件大小:221K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ICTE-5 thru ICTE-45C, e3
TRANSIENT VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
The ICTE-5 through ICTE-45C series of Transient Voltage
Suppressors (TVSs) are designed for the protection of integrated
circuits that require very low Clamping Voltages (VC) during a
transient threat. Due to their very fast response time, protection
level and high Peak Pulse Power (PPP) capability, they are extremely
effective in providing protection against line transients generated by:
voltage reversals, capacitive or inductive load switching,
electromechanical switching, electrostatic discharge and
electromagnetic coupling.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
This series of TVS devices is designed to protect
Bipolar, MOS and Schottky improved integrated
circuits.
•
These transient voltage suppressors are
designed for the protection of integrated
circuits. Characterized by a very low
clamping voltage together with a low standoff
voltage, they afford a high degree of
protection to: TTL, ECL, DTL, MOS, CMOS,
VMOS, HMOS, NMOS and static memory
circuits.
Transient protection for CMOS, MOS, Bipolar,
ICS (TTL, ECL, DTL, RTL and linear functions)
•
•
•
5.0 to 45 volts
Low clamping ratio
RoHS Compliant devices available by adding “e3”
suffix
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
1500 Watts of Peak Pulse Power (PPP)
•
•
CASE: Void-free, transfer molded
thermosetting epoxy body meeting UL94V-0
dissipation at 25oC and 10x1000μs
FINISH: Tin-lead or RoHS Compliant matte-
Tin plating solderable per MIL-STD-750,
method 2026
tclamping (0 volts to V(BR) min):
<100 ps theoretical for unidirectional and <5 ns
for bidirectional
Operating and Storage temperatures: -65oC to
•
POLARITY: Cathode connected to case and
marked. Bidirectional not marked.
•
•
+150oC.
•
•
•
WEIGHT: 1.5 grams (approx.)
MOUNTING POSITION: Any
See package dimension on last page
Forward surge rating: 200 amps, 1/120 second
at 25oC. (Applies to Unidirectional or single
direction only).
•
•
•
Steady State power dissipation: 5 watts.
Repetition rate (duty cycle): .05%
Clamping Factor: 1.33 @ Full rated power.
1.20 @ 50% rated power.
•
Clamping Factor: The ratio of the actual VC
(Clamping Voltage) to the actual V(BR)
(Breakdown Votlage) as measured on a
specific device.
Copyright © 2007
7-09-2007 REV A
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
ICTE-5 thru ICTE-45C, e3
TRANSIENT VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS @ 25oC (UNIDIRECTIONAL)
MAXIMUM
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
MAXIMUM
REVERSE
LEAKAGE
CLAMPING
VOLTAGE
(Fig. 2)
MAXIMUM
PEAK PULSE
CURRENT
MINIMUM*
BREAKDOWN
VOLTAGE
STAND-OFF
VOLTAGE
(NOTE 1)
@V
I
= 1A
@ I
= 10A
@ 1.0 mA
@ 10 x 1000μs
WM
PP1
PP2
I
V
V
V
V
I
MICROSEMI
PART NUMBER
ICTE-5
ICTE-8
ICTE-10
ICTE-12
ICTE-15
ICTE-18
ICTE-22
D
WM
(BR)
C
C
PP3
VOLTS
5.0
8.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
μA
300
25
2
2
2
2
2
2
2
VOLTS
6.0
9.4
11.7
14.1
17.6
21.2
25.9
42.4
52.9
VOLTS
7.1
VOLTS
7.5
A
160
100
90
70
60
50
40
23
19
11.3
13.7
16.1
20.1
24.2
29.8
50.6
63.3
11.5
14.1
16.5
20.6
25.2
32.0
54.3
70.0
ICTE-36
ICTE-45
VF at 100 amps peak, 8.3 msec sine wave equals 3.5 volts maximum.
ELECTRICAL CHARACTERISTICS @ 25oC (Test Both Polarities for BIDIRECTIONAL)
ICTE-5C
5.0
300
25
2
6.0
7.1
7.5
160
100
90
70
60
50
40
23
19
ICTE-8C
8.0
9.4
11.4
14.1
16.7
20.8
24.8
30.8
50.6
63.3
11.6
14.5
17.1
21.4
25.5
32.0
54.3
70.0
ICTE-10C
ICTE-12C
ICTE-15C
ICTE-18C
ICTE-22C
ICTE-36C
ICTE-45C
10.0
12.0
15.0
18.0
22.0
36.0
45.0
11.7
14.1
17.6
21.2
25.9
42.4
52.9
2
2
2
2
2
2
C Suffix indicates Bidirectional
NOTE 1: TVSs are normally selected according to the reverse “Stand Off Voltage” (VWM) which should be equal to or greater than the dc or continuous
peak operating voltage level.
* The minimum breakdown voltage as shown takes into consideration the +1 volt tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated
power supply voltages are employed.
OUTLINE AND CIRCUIT
FIGURE 1
Peak Pulse Power vs.
Pulse Time (TW) in μs
Copyright © 2007
Microsemi
Page 2
7-09-2007 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
ICTE-5 thru ICTE-45C, e3
TRANSIENT VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
FIGURE 2
FIGURE 3
Typical Characteristic Clamping Voltage
vs. Peak Pulse Current
Typical Capacitance vs. Breakdown Voltage
(Unidirectional Types)
PACKAGE DIMENSIONS
FIGURE 4
Typical Capacitance vs. Breakdown Voltage
(Bidirectional Types)
Copyright © 2007
7-09-2007 REV A
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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