JAN1N1128RA [MICROSEMI]

Rectifier Diode, 1 Phase, 1 Element, 3.3A, 600V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 PIN;
JAN1N1128RA
型号: JAN1N1128RA
厂家: Microsemi    Microsemi
描述:

Rectifier Diode, 1 Phase, 1 Element, 3.3A, 600V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 PIN

二极管
文件: 总3页 (文件大小:59K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
HIGH RELIABILITY POWER RECTIFIER  
Qualified per MIL-PRF-19500/260  
Glass Passivated Die  
Glass to Metal Seal Construction  
25 Amps Surge Rating VRRM to 1000 Volts  
DEVICES  
LEVELS  
1N1124A  
1N1126A  
1N1128A  
1N1124RA  
1N1126RA  
1N1128RA  
1N3649  
1N3650  
1N3649R  
1N3650R  
JAN  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
1N1124A  
1N1124RA  
1N1126RA  
1N1128RA  
1N3649R  
200  
400  
600  
Peak Repetitive Reverse Voltage  
1N1126A  
1N1128A  
1N3649  
VRWM  
V
800  
1N3650  
1N3650R  
1000  
Average Forward Current, TC = 150°  
IF  
3.3  
25  
A
A
Peak Surge Forward Current @ tp = 8.3ms, half sinewave,  
TC = 150°C, T = 1/120s  
IFSM  
Thermal Resistance, Junction to Case  
Operating Case Temperature Range  
Storage Temperature Range  
2.0  
°C/W  
°C  
Rθjc  
TC  
-65°C to 150°C  
-65°C to 200°C  
DO-203AA(DO-4)  
Tstg  
°C  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Forward Voltage  
IF = 10A, Tj = 25°C*  
VF  
2.2  
V
Reverse Current  
VR = 200, Tj = 25°C  
VR = 400, Tj = 25°C  
VR = 600, Tj = 25°C  
VR = 800, Tj = 25°C  
VR = 1000, Tj = 25°C  
1N1124A  
1N1126A  
1N1128A  
1N3649  
1N1124RA  
1N1126RA  
1N1128RA  
1N3649R  
IR  
5
μA  
μA  
1N3650  
1N3650R  
Reverse Current  
VR = 200, Tj = 150°C  
VR = 400, Tj = 150°C  
VR = 600, Tj = 150°C  
VR = 800, Tj = 150°C  
VR = 1000, Tj = 150°C  
1N1124A  
1N1126A  
1N1128A  
1N3649  
1N1124RA  
1N1126RA  
1N1128RA  
1N3649R  
IR  
200  
1N3650  
1N3650R  
* Pulse test: Pulse width 300 µsec, Duty cycle 2%  
Note:  
T4-LDS-0135 Rev. 1 (091678)  
Page 1 of 3  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
HIGH RELIABILITY POWER RECTIFIER  
GRAPHS  
FIGURE 1  
TYPICAL FORWARD CHARACTERISTICS  
FIGURE 2  
TYPICAL REVERSE CHARACTERISTICS  
T4-LDS-0135 Rev. 1 (091678)  
Page 2 of 3  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
HIGH RELIABILITY POWER RECTIFIER  
PACKAGE DIMENSIONS  
NOTES:  
Dimensions  
Millimeters  
Ltr  
Inches  
Min  
Notes  
1. Dimensions are in inches.  
Max  
Min  
Max  
2. Millimeters are given for general information only.  
3. Units must not be damaged by torque of 15 inch-pounds applied to  
10-32NF-2B nut assembled on thread  
4. Diameter of unthreaded portion .189 inch (4.80 mm) max and .163  
inch (4.14 mm) min.  
5. Complete threads to extend to within 2.5 threads of seating plane.  
6. Angular orientation of this terminal is undefined.  
7. Max pitch diameter of plated threads shall be basic pitch diameter  
.169 inch (4.31 mm) reference FED-STD-H28 (Screw Thread  
Standards for Federal Services.)  
CH  
CD  
HF  
HT  
OAH  
C
.405  
.424  
.437  
.175  
.800  
.250  
10.29  
10.77  
11.10  
4.44  
20.32  
6.35  
.424  
.075  
10.77  
1.90  
9
.060  
.422  
1.52  
φT  
SL  
K
.453  
10.72  
11.51  
3,5,7  
8. The A.S.A. thread reference is 10-32UNF2A.  
9. Terminal shape is unrestricted.  
10. Reversed (anode to stud) units shall be marked with an R  
following the last digit in the type number  
11. In accordance with ASME Y14.5M, diameters are equivalent to φx  
symbology.  
Physical dimensions (DO-203AA, formerly DO-4)  
1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A and AR versions, and 1N1124A, 1N1126A,  
1N1128A, and RA versions 1N3649, 1N3650, and R versions.  
T4-LDS-0135 Rev. 1 (091678)  
Page 3 of 3  

相关型号:

JAN1N1184

Military Silicon Power Rectifier
MICROSEMI

JAN1N1184R

Military Silicon Power Rectifier
MICROSEMI

JAN1N1186

Military Silicon Power Rectifier
MICROSEMI

JAN1N1186R

Military Silicon Power Rectifier
MICROSEMI

JAN1N1188

Military Silicon Power Rectifier
MICROSEMI

JAN1N1188R

Military Silicon Power Rectifier
MICROSEMI

JAN1N1190

Military Silicon Power Rectifier
MICROSEMI

JAN1N1190R

Military Silicon Power Rectifier
MICROSEMI

JAN1N1199A

Rectifier Diode, 1 Phase, 1 Element, 12A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
VISHAY

JAN1N1199RA

Rectifier Diode, 1 Phase, 1 Element, 12A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
VISHAY

JAN1N1200RA

Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
VISHAY

JAN1N1200RA

Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
INFINEON