JAN1N3647SM [MICROSEMI]
Rectifier Diode, 1 Element, 0.25A, Silicon, HERMETIC SEALED, GLASS, MELF-2;
| 型号： | JAN1N3647SM |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Element, 0.25A, Silicon, HERMETIC SEALED, GLASS, MELF-2 |
| 文件： | 总3页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N3643 thru 1N3647
1N4254 thru 1n4257
VOIDLESS-HERMETICALLY-SEALED
S C O T T S D A L E D I V I S I O N
HIGH VOLTAGE RECTIFIERS
DESCRIPTION
APPEARANCE
These “standard recovery” high voltage rectifier diode series are military qualified to
MIL-PRF-19500/279 for the 1N3644 thru 1N3647. Others such as the 1N5181 thru
1N5184 meet or exceed requirements of MIL-PRF-19500/389. They are ideal for
high-reliability where a failure cannot be tolerated for high voltage applications.
These 0.10 and 0.25 Amp rated rectifiers at 55ºC for working peak reverse voltages
from 1000 to 10,000 volts are hermetically sealed with voidless-glass construction
using an internal “Category I” metallurgical bond. Surface mount MELF package
configurations are also available by adding “SM” suffix. Microsemi also offers
numerous other rectifier products to meet higher and lower current ratings with
various recovery time speed requirements including fast and ultrafast device types
in both through-hole and surface mount packages.
S Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
JEDEC registered 1N3643 thru 1N3647, 1N4254
•
High voltage standard recovery rectifiers 1000 to
thru 1N4257, and 1N5181 thru 1N5187 series
10,000 V
•
•
•
•
•
•
•
Voidless Hermetically Sealed Glass Package
Triple Layer Passivation
Internal “Category I” Metallurgical bonds
Lowest Reverse Leakage Available
Lowest Thermal Resistance Available
Absolute High Voltage / High Temperature Stability
•
•
Military and other high-reliability applications
Applications include bridges, half-bridges, catch
diodes, voltage multipliers, X-ray machines,
power supplies, transmitters, and radar
equipment
•
•
•
High forward surge current capability
Extremely robust construction
1N5181 thru 1N5184 meet or exceed requirements
Low thermal resistance
of MIL-S-19500/389
•
Inherently radiation hard as described in Microsemi
•
•
1N3644 thru 1N3647 JAN, JANTX types available
per MIL-S19500/279
MicroNote 050
Surface mount equivalents also available in a square
end-cap MELF configuration with “SM” suffix
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
Junction & Storage Temperature: -65oC to +175oC
•
•
CASE: Hermetically sealed voidless hard glass
Thermal Resistance: 38oC/W junction to lead at 3/8
inch (10 mm) lead length from body
Average Rectified Forward Current (IO):
1N3643 thru 1N3647: 0.250 Amps @ TA = 55ºC
0.150 Amps @ TA = 100ºC
1N4254 thru 1N4257: 0.250 Amps @ TA = 55ºC
0.150 Amps @ TA = 100ºC
1N5181 thru 1N5184: 0.100 Amps @ TA = 55ºC
0.060 Amps @ TA = 100ºC
with Tungsten slugs
TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT: 400 mg (approx)
See package dimensions on last page
•
•
•
•
•
•
•
•
Forward Surge Current: See Electrical
Characteristics for surge at 8.3 ms half-sine wave
Solder Temperatures: 260ºC for 10 s (maximum)
Copyright 2004
Microsemi
Page 1
12-29-2004 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N3643 thru 1N3647
1N4254 thru 1n4257
VOIDLESS-HERMETICALLY-SEALED
S C O T T S D A L E D I V I S I O N
HIGH VOLTAGE RECTIFIERS
ELECTRICAL CHARACTERISTICS
MAXIMUM
FORWARD
VOLTAGE
VF
WORKING
PEAK
AVERAGE
RECTIFIED
CURRENT
IO
REVERSE
CURRENT
(MAX.)
MAXIMUM
SURGE
CURRENT
@ 8.3 ms
REVERSE
VOLTAGE
VRWM
(See Notes
1 & 2)
IR @ VRWM
TYPE
VOLTS
mA
VOLTS
AMPS
µA
55oC
100oC
150
150
150
150
150
150
150
150
150
60
25oC
55oC
125oC
175oC
1N3643
1000
1500
2000
2500
3000
1500
2000
2500
3000
4000
5000
7500
10,000
250
250
250
250
250
250
250
250
250
100
100
100
100
5.0 (1)
5.0 (1)
5.0 (1)
5.0 (1)
5.0 (1)
3.5 (2)
3.5 (2)
3.5 (2)
3.5 (2)
10 (2)
10 (2)
10 (2)
10 (2)
5
5
5
5
5
1
1
1
1
-
-
-
-
-
-
14
14
14
14
14
10
10
10
10
4
JAN1N3644
JAN1N3645
JAN1N3646
JAN1N3647
1N4254
-
-
-
-
-
-
-
-
-
-
-
20
20
20
20
-
-
-
1N4255
-
1N4256
-
-
1N4257
-
-
1N5181
5
5
5
5
1000
1000
1000
1000
1N5182
60
-
-
4
1N5183
60
-
-
4
1N5184
60
-
-
4
NOTE 1: VF @ 250mA
NOTE 2: VF @ 100mA
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
VRWM
VF
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
IR
GRAPHS
FIGURE 1
FIGURE 2
1N3643-47 and 1N4254-57
1N5181-84
Copyright 2004
Microsemi
Page 2
12-29-2004 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N3643 thru 1N3647
1N4254 thru 1n4257
VOIDLESS-HERMETICALLY-SEALED
S C O T T S D A L E D I V I S I O N
HIGH VOLTAGE RECTIFIERS
PACKAGE DIMENSIONS
NOTE: Lead tolerance is +0.003/-0.004 inches
Copyright 2004
Microsemi
Scottsdale Division
Page 3
12-29-2004 REV A
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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