JAN1N4454UR-1 [MICROSEMI]
MINI-MELF-SMD Silicon Swithching Diode; MINI- MELF -SMD硅Swithching二极管型号: | JAN1N4454UR-1 |
厂家: | Microsemi |
描述: | MINI-MELF-SMD Silicon Swithching Diode |
文件: | 总1页 (文件大小:68K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MINI-MELF-SMD
Silicon Switching Diode
1N4454UR-1
Applications
Used in general purpose applications,
where performance, space and
switching speed are important.
LL-34/35 MINI MELF
Surface Mount Package DO-213AA
Features
Six sigma quality
Metallurgically bonded
Both End Caps
0.10"REF
0.016-.022"
2.54 mmREF
0.41-0.55 mm
BKC's Sigma Bond™ plating
for problem free solderability
Also comes in DO-35 glass package
Full UR approval to Mil-S-19500 /144
Available up to JANTXV levels
Length
Dia.
0.13-0.146"
.063-.067"
3.30-3.70 mm
1.6-1.7mm
"S" level screening available to Source Control Drawings
Maximum Ratings
Symbol
PIV
IAvg
Value
75 (Min.)
200
Unit
Volts
mAmps
mAmps
Amp
mWatts
o C
Peak Inverse Voltage @ 5µA & 0.1µA @ -55oC
AverageRectifiedCurrent
Continuous Forward Current
IFdc
300
Peak Surge Current (tpeak = 1 sec.)
Power Dissipation TL= 50 oC, L = 3/8" from body
Operating Temperature Range
Storage Temperature Range
Ipeak
Ptot
1.0
500
TOp
TSt
200
-65 to +200
Limits
o C
Electrical Characteristics @ 25oC*
Forward Voltage @ IF= 10 mA
Breakdown Voltage @ IR = 10 mA
Reverse Leakage Current @ VR = 50 V
Symbol
VF
Unit
1.0(max)
75 (min)
Volts
Volts
µA
PIV
IR
0.1 (max)
100 (max)
2.0 (max)
o
Reverse Leakage Current @ VR = 50 V, T=150 C
Capacitance @ VR = 0 V, f = 1mHz
IR
µA
CT
pF
Reverse Recovery Time (note 1)/(note 2)
Forward Recovery Voltage (note 3)
trr
2.0/4.0 (max) nSecs
3.0 (max) Volts
Vfr
Note 1: Per Method 4031-A with IF = IR = 10 mA, RL = 100 Ohms, C = 3 Pf.
Note 2: Per Method 4031-A with IF = 10 mA, RL = 100 Ohms, Vr = 6 V, Recover to 1.0 mA.
Note 3: Per Method 4026 with IF = 100 mA, RL = 50 Ohms,Peak Square wave ,100 nSec Pulse Width, tr<30 nSec,repe-
tition Rate = 5 - 100 KHz. *Unless Otherwise Specified
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
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