JAN1N6663US [MICROSEMI]
Rectifier Diode, 1 Element, 0.5A, Silicon, DO-35,;
| 型号： | JAN1N6663US |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Element, 0.5A, Silicon, DO-35, 二极管 |
| 文件： | 总2页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6661US thru 1N6663US
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
RECTIFIERS
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
These “standard recovery” rectifier diodes are military qualified to MIL-PRF-19500/587
and is ideal for high-reliability applications where a failure cannot be tolerated. They
have a 500 mA rating with working peak reverse voltages from 225 to 600 volts and
are hermetically sealed with void-less-glass construction using an internal “Category I”
metallurgical bond. The axial-leaded package configurations are also available by
deleting the “US” suffix (see separate data sheet for 1N6661 to 1N6663). Microsemi
also offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including Fast and Ultrafast device
types in both through-hole and surface mount packages.
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
•
Popular JEDEC registered 1N6661 thru 1N6663 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
•
•
•
Standard recovery 0.5 Amp rectifiers 225 to 600 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
Forward surge current capability
Extremely robust construction
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 225 to 600 Volts.
•
•
•
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/587
Low thermal resistance in small MELF package
•
Inherently radiation hard as described in Microsemi
MicroNote 050
•
Axial-leaded equivalents also available without the
“US” suffix (see 1N6661 thru 1N6663)
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
Junction & Storage Temperature: -65oC to +175oC
Thermal Resistance: 35oC/W junction to end cap
•
•
CASE: Hermetically sealed void-less hard glass
with Tungsten slugs
TERMINATIONS: End caps are copper with
Tin/Lead (Sn/Pb) finish
Average Rectified Forward Current (IO): 0.5 Amps @
TEC = 110ºC and 0.150 Amps at TEC = 150ºC
•
•
•
•
•
MARKING: Body paint
•
•
Forward Surge Current: 5 Amps @ 8.3 ms half-sine
Solder Temperatures: 260ºC for 10 s (maximum)
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-481-B
WEIGHT: 84 mg (approx)
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
WORKING
PEAK
MINIMUM
BREAKDOWN
VOLTAGE
AVERAGE
RECTIFIED
CURRENT
(NOTE 2)
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
SURGE
CURRENT
(NOTE 1)
MAXIMUM REVERSE
CURRENT
REVERSE
VOLTAGE
TYPE
V
@ 0.4 A
F
V
V
@ 100μA
VOLTS
I
I
@ V
μA
I
(PULSED)
VOLTS
RWM
BR
O
R
RWM
FSM
VOLTS
AMPS
AMPS
25oC
150oC
0.15
0.15
0.15
25oC
150oC
300
300
300
1N6661US
1N6662US
1N6663US
225
400
600
270
480
720
0.5
0.5
0.5
1.0
1.0
1.0
0.05
0.05
0.05
5
5
5
NOTE 1: TA = 25oC, 10 surges of 8.3 ms @ 1 minute intervals
NOTE 2: Linearly derate at 8.75 mA/ºC between TEC = 110ºC to 150ºC and 6.0 mA/ºC between TEC = 150ºC to 175ºC
Copyright © 2008
1-03-2008
Microsemi
Scottsdale Division
Page 1
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6661US thru 1N6663US
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
RECTIFIERS
S C O T T S D A L E D I V I S I O N
SYMBOLS & DEFINITIONS
Symbol
VBR
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
VRWM
VF
IR
GRAPHS
PACKAGE DIMENSIONS
NOTE: This Package Outline has also previously
been identified as “D-5A”
PAD LAYOUT
INCHES
0.246
mm
6.25
1.70
2.67
A
B
C
INCHES
mm
0.067
MIN
MAX
.103
.200
MIN
2.46
4.70
MAX
2.62
5.08
0.105
BD
BL
ECT
S
.097
.185
.019
.003
Note: If mounting requires adhesive
separate from the solder, an additional
0.060 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
.028
---
0.48
0.08
0.71
---
Copyright © 2008
1-03-2008
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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