JAN2N1893 [MICROSEMI]

NPN LOW POWER SILICON TRANSISTOR; NPN小功率硅晶体管

JAN2N1893


型号：	JAN2N1893
厂家：	MICROSEMI CORPORATION
描述：	NPN LOW POWER SILICON TRANSISTOR NPN小功率硅晶体管晶体小信号双极晶体管
文件：	总2页 (文件大小：55K)
下载：	下载PDF数据表文档文件

JAN2N1893S

NPN LOW POWER SILICON TRANSISTOR

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17 MICROSEMI

JAN2N1893S

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5

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10 ETC

JAN2N1893S

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SIMILAR TO TO-5, 3 PIN

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0 MICROSEMI

JAN2N1909

Silicon Controlled Rectifier, 110A I(T)RMS, 25V V(DRM), 25V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN

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0 IRF

JAN2N1909

Silicon Controlled Rectifier, 110A I(T)RMS, 25V V(DRM), 25V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN

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0 IRF

JAN2N1914

Silicon Controlled Rectifier, 110A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN

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0 IRF

JAN2N2023

Silicon Controlled Rectifier, 110A I(T)RMS, 25V V(DRM), 25V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN

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0 IRF

JAN2N2023

Silicon Controlled Rectifier, 110A I(T)RMS, 25V V(DRM), 25V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN

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0 IRF

JAN2N2025

Silicon Controlled Rectifier, 70000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN

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0 IRF

JAN2N2026

Silicon Controlled Rectifier, 110A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN

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0 IRF

JAN2N2026

Silicon Controlled Rectifier, 110A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN

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0 IRF

JAN2N2030

Silicon Controlled Rectifier, 70000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN

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0 IRF

JAN2N2060

UNITIZED DUAL NPN SILICON TRANSISTOR

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31 MICROSEMI

JAN2N2060

Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-77,

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1 RAYTHEON

JAN2N2060L

UNITIZED DUAL NPN SILICON TRANSISTOR

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13 MICROSEMI

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