JAN2N2608UB [MICROSEMI]
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, SURFACE MOUNT PACKAGE-3;
| 型号： | JAN2N2608UB |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, SURFACE MOUNT PACKAGE-3 CD 晶体管 |
| 文件： | 总1页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
P-CHANNEL J-FET
Qualified per MIL-PRF-19500/ 295
Devices
Qualified Level
2N2608
2N2608UB
JAN
ABSOLUTE MAXIMUM RATINGS (TA = +250C unless otherwise noted)
Parameters / Test Conditions
Symbol
VGSS
Value
30
300
Units
V
Gate-Source Voltage
(1)
TO-18
(TO-206AA)
Power Dissipation
TA = +250C
PD
mW
0C
Operating Junction & Storage Temperature Range
(1) Derate linearly 1.71 mW/0C for TA > +250C.
Top, Tstg
-65 to +200
Surface Mount (UB
version)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
PARAMETERS / TEST CONDITIONS
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0 mAdc
Symbol
V(BR)GSS
IGSS
Min.
Max.
Units
Vdc
30
Gate Reverse Current
VDS = 0, VGS = 30 Vdc
10
hAdc
VDS = 0, VGS = 15 Vdc
7.5
Drain Current
VGS = 0, VDS = 5.0 Vdc
IDDSS
-1.0
-5.0
6.0
mAdc
Vdc
Gate-Source Cutoff Voltage
VDS = 5.0 V, ID = 1.0 mAdc
VGS(off)
0.75
Magnitude of Small-Signal, Common-Source Short-Circuit Forward
Transfer Admittance
VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz
Small-Signal, Common-Source Short-Circuit Input Capacitance
VGS = 0, VDS = 5.0 Vdc, f = 1.0 MHz
Common-Source Spot Noise Figure
VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz
BW = 16%, RG = 1.0 megohms, egen = 1.82 mVdc, RL = 470 W
½Yfs2½
1,000
4,500
10
mmho
Ciss
pF
NF
3.0
dB
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
022802
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