JAN2N2906AUBC [MICROSEMI]
Transistor;
Microsemi 
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 16 May 2013.
INCH-POUND
MIL-PRF-19500/291U
16 February 2013
SUPERSEDING
MIL-PRF-19500/291T
23 September 2011
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING,
TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA,
2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, 2N2907AUBC,
2N2906AUBN, 2N2906AUBCN, 2N2907AUBN, AND 2N2907AUBCN, JAN,
JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF,
JANSG, JANSH JANHC, JANKC, JANKCM, JANKCD,
JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two
levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance (RHA)
level designators “M”, “D”, “P“, “L” “R”, “F’, “G”, and “H” are appended to the device prefix to identify devices which
have passed RHA requirements.
*
1.2 Physical dimensions. See figure 1 (similar to a TO-18), figure 2, (surface mount case outlines UA, figure 3
UB (metal lid, as shield, connected to fourth pad), UBC (ceramic lid, braze-ring connected to fourth pad), UBN (3-pin,
isolated metal lid), and UBCN (3-pin, isolated ceramic lid) and figures 4, and 5 (JANHC and JANKC).
1.3 Maximum ratings. Unless otherwise specified TA = +25°C.
Types
I
V
V
V
T and T
J
C
CBO
EBO
CEO
STG
mA dc
600
V dc
60
V dc
5
V dc
60
°C
All devices
-65 to +200
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at https://assist.dla.mil .
AMSC N/A
FSC 5961
MIL-PRF-19500/291U
1.3 Maximum ratings. Unless otherwise specified TA = +25°C. - Continued.
Types
Rθ
JA
Rθ
JC
Rθ
JSP(IS)
P
P
P
P
T
R
θJSP(AM)
T
T
T
(2) (3)
(2)
(3)
(2) (3)
(2) (3)
T
= +25°C
(1) (2)
W
T
= +25°C
(1) (2)
W
T
= +25°C
(1) (2)
W
T
=
SP(AM)
A
C
SP(IS)
+25°C (1) (2)
W
°C/W
°C/W
°C/W
°C/W
2N2906A, L,
2N2907A, L
2N2906AUA,
2N2907AUA
2N2906AUB,
and UBN
0.5
0.5
(4) 0.5
(4) 0.5
(4)0.5
1.0
1.0
N/A
N/A
N/A
N/A
N/A
1.0
1.0
1.0
N/A
N/A
1.5
1.5
N/A
325
325
(4) 325
(4) 325
(4) 325
150
150
N/A
N/A
N/A
N/A
N/A
110
110
90
N/A
N/A
40
40
N/A
2N2907AUB
and UBN
2N2906AUBC
and UBCN
2N2907AUBC
and UBCN
(4) 0.5
(4) 0.5
(4) 0.5
N/A
N/A
N/A
1.0
1.0
1.0
N/A
N/A
N/A
(4) 325
(4) 325
(4) 325
N/A
N/A
N/A
90
90
90
N/A
N/A
N/A
(1) For derating, see figures 6, 7, 8, 9, and 10.
(2) See 3.3 for abbreviations.
(3) For thermal curves, see figures 11, 12, 13, 14, and 15.
(4) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 6
and 11 for the UA, UB,, UBC, UBN, and UBCN package and use Rθ
.
JA
1.4 Primary electrical characteristics. Unless otherwise specified TA = +25°C.
hFE at VCE = 10 V dc
hFE1
hFE2
hFE3
hFE4 (1)
hFE5 (1)
IC = 0.1 mA dc
IC = 1.0 mA dc
IC = 10 mA dc
IC = 150 mA dc
IC = 500 mA dc
2N2906A, 2N2907A, 2N2906A 2N2907A 2N2906A 2N2907A 2N2906A 2N2907A 2N2906A 2N2907A L,
L, UA,UB, L, UA,UB, , L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, UA,UB,
UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN, UBC, UBN,
UBCN
UBCN
UBCN
UBCN
UBCN
UBCN
UBCN
UBCN
UBCN
UBCN
Min
40
75
40
100
40
100
40
100
40
50
Max
175
450
120
300
Switching (saturated)
Types
Limit
Cobo
ton
toff
|hfe|
See figure 16
See figure 17
100 kHz ≤ f ≤ 1 MHz
VCB = 10 V dc, IE = 0
pF
f = 100 MHz VCE = 20 V dc,
IC = 20 mA dc
ns
45
ns
2N2906A,
2N2907A,
L, UA, UB, UBC,
UBN, UBCN
Min
Max
2.0
8
300
Types
Limits
VCE(sat)1 (1)
VCE(sat)2 (1)
VBE(sat)1 (1)
VBE(sat)2 (1)
IC = 150 mA dc
IB = 15 mA dc
IC = 500 mA dc
IB = 50 mA dc
IC = 150 mA dc
IB = 15 mA dc
IC = 500 mA dc
IB = 50 mA dc
2N2906A, 2N2907A,
L, UA, UB, UBC
UBN, UBCN
V dc
0.4
V dc
1.6
V dc
0.6
1.3
V dc
2.6
Min
Max
(1) Pulsed see 4.5.1.
2
MIL-PRF-19500/291U
Symbol
Dimensions
Millimeters
Min Max
4.52 4.95
Notes
Inches
Min
Max
.195
.210
.230
CD
CH
HD
LC
LD
LL
LU
L1
.178
.170
.209
4.32
5.31
5.33
5.84
.100 TP
2.54 TP
6
7,8
.016
.500
.016
.021
.750
.019
.050
0.41
12.70
0.41
0.53
19.05
0.48
7,8,13
7,8
1.27
7,8
L2
.250
.100
6.35
2.54
7,8
P
Q
.030
.048
.046
.010
0.76
1.22
1.17
0.25
5
3,4
3
TL
TW
r
.028
.036
0.71
0.91
10
6
α
45° TP
45° TP
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter
is uncontrolled in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max.
FIGURE 1. Physical dimensions (similar to TO-18).
3
MIL-PRF-19500/291U
UA
Dimensions
Inches Millimeters
Note
Symbol
Min
.215
Max
.225
.225
.155
.155
.075
Min
5.46
Max
5.71
5.71
3.93
3.93
1.90
BL
BL2
BW
BW2
CH
.145
3.68
.061
.003
.029
.032
.072
.045
.022
.006
1.55
0.08
0.74
0.81
1.83
1.14
0.56
0.15
3
5
L3
*
LH
.042
.048
.088
.055
.028
.022
1.07
1.22
2.23
1.39
0.71
0.56
LL1
LL2
LS
LW
LW2
5
Pin no.
1
2
3
4
Transistor
Collector
Emitter
Base
N/C
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension "CH" controls the overall package thickness. When a window lid is used, dimension "CH" must
increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4. The corner shape (square, notch, radius) may vary at the manufacturer's option, from that shown on the
drawing.
5. Dimensions "LW2" minimum and "L3" minimum and the appropriate castellation length define an unobstructed
three-dimensional space traversing all of the ceramic layers in which a castellation was designed.
(Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension "LW2" maximum
and "L3" maximum define the maximum width and depth of the castellation at any point on its surface.
Measurement of these dimensions may be made prior to solder dipping.
6. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not
exceed .006 inch (0.15 mm) for solder dipped leadless chip carriers.
7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 2. Physical dimensions, surface mount (UA version).
4
MIL-PRF-19500/291U
* FIGURE 3. Physical dimensions, surface mount (UB, UBN, UBC, and UBCN versions).
5
MIL-PRF-19500/291U
Dimensions
Symbol
Inches
Millimeters
Min
Note
Min
.115
.095
.046
.046
.055
.055
Max
.128
.108
.056
.056
.069
.069
.128
.108
.038
.035
.040
.079
.024
.008
.012
.022
Max
3.25
2.74
1.42
1.42
1.75
1.75
3.25
2.74
0.97
0.89
1.02
2.01
0.61
0.20
0.30
0.56
BL
BW
BH
BH
BH
BH
CL
CW
LL1
LL2
LS1
LS2
LW
r
2.92
2.41
1.17
1.17
1.40
1.40
UB only, 4
UBN only, 5
UBC only, 6
UBCN only, 7
.022
.014
.035
.071
.016
0.56
0.356
0.89
1.80
0.41
3 PLS
3 PLS
*
*
6
8
r1
r2
*
UB & UBC only, 8
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. UB only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the metal lid.
5. UBN only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Isolated lid with three pads only.
6. UBC (ceramic lid) only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to
the lid.
7. UBCN (ceramic lid) only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Isolated lid with 3 pads only.
8. For design reference only.
9. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 3. Physical dimensions, surface mount (UB, UBN, UBC, and UBCN versions) - Continued.
6
MIL-PRF-19500/291U
1. Chip size:
.023 x .023 inch ±.002 inch (0.584 mm x 0.584 mm ±0.0508 mm).
.010 ±.0015 inch (0.254 mm ±0.038 mm).
Aluminum 15,000 Åminimum, 18,000 Ånominal.
A. Al/Ti/Ni/Ag 15kÅ/5kÅ/10kÅ/10kÅ.
2. Chip thickness:
3. Top metal:
4. Back metal:
B. Gold 2.5 kÅminimum, 3.0 kÅnominal.
C. Eutectic Die Mount - No metal.
5. Glassivation:
6. Backside:
SI3N4 2kÅminimum, 2.2k nominal.
Collector.
7. Bonding pad:
B = .0042 x .0042 inch (0.107 mm x 0.107 mm).
E = .0042 x .0042 inch (0.107 mm x 0.107 mm).
FIGURE 4. JANHC and JANKC (B-version) die dimensions.
7
MIL-PRF-19500/291U
E
B
1. Die size:
.020 x .020 inch square (0.508 mm x 0.508 mm).
.008 ±.0016 inch (0.203 mm ±0.041 mm).
.004 x .004 inch (0.101 mm x 0.101 mm).
.004 x .004 inch (0.101 mm x 0.101 mm).
Gold, 6,500 ±1,950 Å.
2. Die thickness:
3. Base pad:
4. Emitter pad:
5. Back metal
6. Top metal:
7. Back side:
Aluminum, 20,000 ±2,000 Å.
Collector.
8. Glassivation:
SiO2, 7,500 ±1,500 Å.
FIGURE 5. JANHC and JANKC (D-version) die dimensions.
8
MIL-PRF-19500/291U
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 Test Methods for Semiconductor Devices.
(Copies of these documents are available online at https://assist.dla.mil/quicksearch or https://assist.dla.mil or
-
Semiconductor Devices, General Specification for.
-
*
from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see 4.2 and 6.3).
*
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
PCB
Printed circuit board
Rθ
JA
Thermal resistance junction to ambient.
Rθ
JC
Thermal resistance junction to case.
Rθ
Thermal resistance junction to solder pads (adhesive mount to PCB).
Thermal resistance junction to solder pads (infinite sink mount to PCB).
Temperature of solder pads (adhesive mount to PCB).
Temperature of solder pads (infinite sink mount to PCB).
Surface mount case outlines (see figure 2).
JSP(AM)
Rθ
JSP(IS)
TSP(AM)
TSP(IS)
UA,
*
*
*
UB, UBC
UBN, UBCN
Surface mount case outlines (see figure 3).
Surface mount case outlines (see figure 3).
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figures 1, 2, 3, 4, and 5 herein. Epoxy die attach may be used when a moisture monitor plan
has been submitted and approved by the qualifying activity.
3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500. Where a choice of lead finish is
desired, it shall be specified in the acquisition document (see 6.2).
9
MIL-PRF-19500/291U
3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and
test levels shall be as defined in MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I
herein.
*
3.8 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB, UBC, UBN, and UBCN
suffix packages. Marking on the UB, UBC, UBN, and UBCN packages shall consist of an abbreviated part number,
the date code, and the manufacturer’s symbol or logo. The prefixes JAN, JANTX, JANTXV, and JANS can be
abbreviated as J, JX, JV, and JS respectively. The "2N" prefix and the "AUB" and “AUBC” suffix can also be omitted.
The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N”
identifier (depending upon degree of abbreviation required).
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I, II, and III).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as
specified herein.
4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
10
MIL-PRF-19500/291U
4.3 Screening (JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV
of MIL-PRF-19500)
Measurement
JANS level
JANTXV and JANTX level
Required (JANTXV only)
1b
2
Required
Optional
Optional
3a
3b
Required
Not applicable
Required
Not applicable
(1) 3c
Required method 3131 of MIL-STD-750
Required method 3131 of MIL-STD-750
4
5
6
8
9
Required
Optional
Required
Not required
Not applicable
Not required
Not applicable
Not applicable
Required
ICBO2, hFE4, read and record
24 hours minimum
10
11
24 hours minimum
ICBO2, hFE4
ICBO2; hFE4
;
∆ICBO2 = 100 percent of initial value or
5 nA dc, whichever is greater.
∆hFE4 = ±15 percent
12
See 4.3.2
See 4.3.2
(2) 13
Subgroups 2 and 3 of table I herein;
∆ICBO2 = 100 percent of initial value or 5
nA dc, whichever is greater;
Subgroup 2 of table I herein;
∆ICBO2 = 100 percent of initial value or
5 nA dc, whichever is greater;
∆hFE4 = ±15 percent
∆hFE4 = ±15 percent
15
16
Required
Not required
Required
Not required
(1) Shall be performed anytime after temperature cycling, screen 3a; TX and TXV do not need to be repeated in
screening requirements.
(2) PDA = 5 percent for screen 13, applies to ∆ICBO2, ∆hFE4, ICBO2, and hFE4. Thermal impedance (ZθJX) is not
required in screen 13.
4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
11
MIL-PRF-19500/291U
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be
applied to achieve TJ = +135°C minimum using a minimum PD = 75 percent of PT maximum, TA ambient rated as
defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias
conditions, TJ, and mounting conditions) for JANTX and JANTXV quality levels may be used. A justification
demonstrating equivalence is required. In addition, the manufacturing site’s burn-in data and performance history will
be essential criteria for burn-in modification approval.
4.3.3 Thermal impedance measurements). The thermal impedance measurements shall be performed in
accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and tMD
(and VC where appropriate). The thermal impedance limit used in screen 3c of 4.3 herein and subgroup 2 of table I
shall comply with the thermal impedance graphs in figures 12, 13, 14, 15, and 16 (less than or equal to the curve
value at the same tH time) and shall be less than the process determined statistical maximum limit as outlined in
method 3131. See table III, subgroup 4 herein.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened
devices shall be submitted to and pass the requirements of subgroups 1 and 2, of table I herein, inspection only
(table E-VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in
accordance with 4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points)
and delta requirements shall be in accordance with table I, subgroup 2 and 4.5.3 herein. See 4.4.2.2 herein for JAN,
JANTX, and JANTXV, group B testing. Electrical measurements (end-points) and delta requirements for JAN,
JANTX, and JANTXV, shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 and
4.5.3 herein.
4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.
Subgroup Method Condition
B4
B5
1037
1027
V
CB = 10 - 30 V dc. Adjust device current, or power, to achieve a minimum ∆T of 100°C.
J
VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure
occurs, resubmission shall be at the test conditions of the original sample.)
Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500,
table E-VIa, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjusted TA or PD to achieve a
TJ = +225°C minimum.
B6
3131
RθJA, RθJC only (see 1.3).
12
MIL-PRF-19500/291U
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic
failures during conformance inspection shall be analyzed to the extent possible to identify root cause and corrective
action. Whenever a failure is identified as wafer lot and wafer processing related, the entire wafer lot and related
devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective action to
eliminate the failures mode has been implemented and the devices from the wafer lot are screened to eliminate the
failure mode.
Step
1
Method
1026
Condition
Steady-state life: 1,000 hours minimum, VCB = 10 dc, power and ambient shall be applied to
achieve TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated PT as
defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time
decreased so long as the devices are stressed for a total of 45,000 device hours minimum,
and the actual time of test is at least 340 hours.
2
3
1048
1032
Blocking life, TA = +150°C, VCB = 80 percent of rated voltage, 48 hours minimum.
n = 45 devices, c = 0.
High-temperature life (non-operating),
t = 340 hours, TA = +200°C. n = 22, c = 0.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a. For JAN, JANTX,and JANTXV samples shall be selected randomly from a minimum of three wafers (or from
each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot.
See MIL-PRF-19500.
b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and
JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV)
herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with
table I, subgroup 2 and 4.5.3 herein.
*
4.4.3.1 Group C inspection, table E-VII (JANS) of MIL-PRF-19500.
Subgroup
C2
Method
2036
Condition
*
Test condition E, (not applicable for UA, UB, UBC, UBN, and UBCN devices).
= 10 V dc, power and ambient temperature shall be applied to
1,000 hours, VCB
C6
1026
the device to achieve TJ = +150°C minimum, and minimum power dissipation of
75 percent of max rated PT (see 1.3 herein); n = 45, c = 0. The sample size may
be increased and the test time decreased as long as the devices are stressed for
a total of 45,000 device hours minimum, and the actual time of test is at least 340
hours.
13
MIL-PRF-19500/291U
*
*
4.4.3.2 Group C inspection, table E-VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
C2
Method
2036
Condition
Test condition E, (not applicable for UA, UB, UBC, UBN, and UBCN devices).
C5
C6
3131
RθJA RθJC only (see 1.3).
Not applicable.
4.4.3.3 Group C sample selection. Samples for steps in group C shall be chosen at random from any inspection
lot containing the intended package type and lead finish procured to the same specification which is submitted to and
passes table I tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the
intended package type shall be considered as complying with the requirements for that subgroup.
*
4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANTXV types shall include
the group D tests specified in table II herein. These tests shall be performed as required in accordance with
MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for
neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other
subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to
the fluence profile.
4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical
measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in
accordance with the applicable steps of 4.5.3.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except
the output capacitor shall be omitted.
4.5.3 Delta requirements. Delta requirements shall be as specified below:
Step
1
Inspection
MIL-STD-750
Conditions
Symbol
Limit
Method
3036
Collector-base cutoff
current
Bias condition D,
VCB = 50 V dc
100 percent of initial
value or 10 nA dc,
whichever is greater.
∆ICB02
(1)
2
Forward current
transfer ratio
3076
±25 percent change
from initial reading.
VCE = 10 V dc;
∆hFE4
(1)
IC = 150 mA dc;
pulsed see 4.5.1
(1) Devices which exceed the table I limits for this test shall not be accepted.
14
MIL-PRF-19500/291U
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
2071
Min
Max
Subgroup 1 2/
Visual and mechanical
inspection 3/
Solderability 3/ 4/
2026
1022
n = 15 leads, c = 0
Resistance to solvents
3/ 4/ 5/
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
1071
Test condition C, 25 cycles. n = 22
devices, c = 0
Hermetic seal 4/
Fine leak
n = 22 devices, c = 0
Gross leak
Electrical measurements
4/
Table I, subgroup 2
Bond strength 3/ 4/
2037
2075
Precondition T = +250°C at t = 24 hours
A
or T = +300°C at t = 2 hours
A
n = 11 wires, c = 0
Decap internal visual
(design verification) 4/
n = 4 devices, c = 0
Subgroup 2
Thermal impedance
3131
3036
3061
3011
See 4.3.3
°C/W
µA dc
µA dc
V dc
Z
θJX
Collector to base cutoff
current
10
10
Bias condition D; V = 60 V dc
I
I
CB
CBO1
EBO1
Cutoff current, emitter to
base
Bias condition D; V = 5 V dc
EB
Breakdown voltage,
collector to emitter
60
Bias condition D; I = 10 mA dc; pulsed
(see 4.5.1)
V
(BR)CEO
C
Collector to emitter
cutoff current
3041
3036
3061
50
10
50
nA dc
nA dc
nA dc
Bias condition C; V = 50 V dc
I
I
I
CE
CES
Collector to base cutoff
current
Bias condition D; V = 50 V dc
CB
CBO2
EBO2
Emitter to base cutoff
current
Bias condition D; V = 4 V dc
EB
See footnotes at end of table.
15
MIL-PRF-19500/291U
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
3076
Min
Max
Subgroup 2 - Continued
Forward-current transfer
ratio
2N2906A, L, UA, UB, UBC
UBN, and UBCN
2N2907A, L, UA, UB, UBC
UBN, and UBCN
V
V
V
V
= 10 V dc; I = 0.1 mA dc
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
CE
CE
CE
CE
C
40
75
Forward-current transfer
ratio
2N2906A, L, UA, UB, UBC
UBN, and UBCN
2N2907A, L, UA, UB, UBC
UBN, and UBCN
3076
3076
3076
3076
= 10 V dc; I = 1.0 mA dc
C
40
175
450
100
Forward-current transfer
ratio
2N2906A, L, UA, UB, UBC
UBN, and UBCN
2N2907A, L, UA, UB, UBC
UBN, and UBCN
= 10 V dc; I = 10 mA dc
C
40
100
Forward-current transfer
ratio
2N2906A, L, UA, UB, UBC
UBN, and UBCN
2N2907A, L, UA, UB, UBC
UBN, and UBCN
= 10 V dc; I = 150 mA dc;
C
pulsed (see 4.5.1)
40
120
300
100
Forward-current transfer
ratio
2N2906A, L, UA, UB, UBC
UBN, and UBCN
2N2907A, L, UA, UB, UBC
UBN, and UBCN
V
= 10 V dc; I = 500 mA dc;
C
pulsed (see 4.5.1)
CE
40
50
Collector-emitter saturation
voltage
3071
3071
3066
0.4
V dc
V dc
V dc
I
= 150 mA dc; I = 15 mA dc, pulsed
V
V
V
C
B
CE(sat)1
CE(sat)2
BE(sat)1
(see 4.5.1)
Collector-emitter saturation
voltage
1.6
1.3
I
= 500 mA dc; I = 50 mA dc; pulsed
C
B
(see 4.5.1)
Base-emitter saturation
voltage
0.6
Test condition A; I = 150 mA dc;
C
I
= 15 mA dc; pulsed (see 4.5.1)
B
Base-emitter saturation
voltage
3066
2.6
V dc
Test condition A; I = 500 mA dc; I
50 mA dc; pulsed (see 4.5.1)
=
V
C
B
BE(sat)2
See footnotes at end of table.
16
MIL-PRF-19500/291U
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
10
Subgroup 3
High temperature operation
T
= +150°C
A
Collector to base cutoff
current
3036
3076
µA dc
Bias condition D; V = 50 V dc
I
CBO3
CB
Low temperature operation
T
= -55°C
A
Forward-current transfer
ratio
2N2906A, L, UA, UB, UBC,
UBN, and UBCN
2N2907A, L, UA, UB, UBC,
UBN, and UBCN
h
FE6
V
V
= 10 V dc; I = 10 mA dc
CE
C
20
50
Subgroup 4
Small-signal short-circuit
forward current transfer ratio
2N2906A, L, UA, UB, UBC,
UBN, and UBCN
2N2907A, L, UA, UB, UBC,
UBN, and UBCN
3206
3306
= 10 V dc; I = 1 mA dc;
h
fe
CE
C
f = 1 kHz
40
100
Magnitude of small- signal
short- circuit forward current
transfer ratio
2.0
V
= 20 V dc; I = 20 mA dc;
C
|h |
fe
CE
f = 100 MHz
Open circuit output
capacitance
3236
3240
8
pF
pF
V
= 10 V dc; I = 0;
E
C
CB
obo
100 kHz ≤ f ≤ 1 MHz
Input capacitance (output
open- circuited)
30
V
= 2.0 V dc; I = 0;
C
ibo
EB
C
100 kHz ≤ f ≤ 1 MHz
See 4.5.2.
Saturated turn-on time
Saturated turn-off time
(See figure 16)
(See figure 17)
45
ns
ns
t
t
on
300
off
Subgroups 5, 6, and 7
Not applicable
See footnotes at end of table.
17
MIL-PRF-19500/291U
* TABLE I. Group A inspection - Continued.
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed test subgroup of table I, double the sample size of the failed test or sequence of tests.
A failure in table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun
upon submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
6/ This test required for the following end-point measurements only:
Group B, subgroup 3, 4, and 5 (JANS).
Group B, step 1 (TX and TXV).
Group C, subgroup 2 and 6.
18
MIL-PRF-19500/291U
* TABLE II. Group D inspection.
Inspection 1/ 2/ 3/
Subgroup 1 4/
MIL-STD-750
Conditions
Limit
Unit
Method
Symbol
Min
Max
Neutron irradiation
1017
3036
3061
3011
Neutron exposure VCES = 0 V
Collector to base cutoff current
Cutoff current, emitter to base
20
20
µA dc
µA dc
V dc
Bias condition D; V = 60 V dc
I
I
CB
CBO1
Bias condition D; V = 5 V dc
EB
EBO1
Breakdown voltage, collector to
emitter
60
Bias condition D; I = 10 mA dc;
V
C
(BR)CEO
pulsed (see 4.5.1)
Collector to emitter cutoff
current
3041
3036
100
nA dc
*
Bias condition C; V = 50 V dc
I
CE
CES
Collector to base cutoff current
Emitter to base cutoff current
20
nA dc
nA dc
Bias condition D; V = 50 V dc
I
I
CB
CBO2
EBO2
3061
3076
100
Bias condition D; V = 4 V dc
EB
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
VCE = 10 V dc; IC = 0.1 mA dc
VCE = 10 V dc; IC = 1.0 mA dc
VCE = 10 V dc; IC = 10 mA dc
VCE = 10 V dc; IC = 150 mA dc
VCE = 10 V dc; IC = 500 mA dc
[hFE1] 5/
[hFE2] 5/
[hFE3] 5/
[hFE4] 5/
[hFE5] 5/
[20]
[37.5]
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
3076
3076
3076
3076
[20]
[50]
175
450
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
[20]
[50]
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
[20]
[50]
120
300
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
[20]
[25]
Collector-emitter saturation
voltage
3071
3071
3066
.46
1.84
1.5
V dc
V dc
V dc
IC = 150 mA dc; IB = 15 mA dc
IC = 500 mA dc; IB = 50 mA dc
VCE(sat)1
Collector-emitter saturation
voltage
VCE(sat)2
Base-emitter saturation voltage
0.6
Test condition A; I = 150 mA dc;
V
V
C
BE(sat)1
BE(sat)2
I
= 15 mA dc; pulsed (see 4.5.1)
B
Base-emitter saturation voltage
3066
3.0
Test condition A; I = 500 mA dc;
C
I
= 50 mA dc; pulsed (see 4.5.1)
B
See footnotes at end of table.
19
MIL-PRF-19500/291U
* TABLE II. Group D inspection - Continued.
MIL-STD-750
Inspection 1/ 2/ 3/
Subgroup 2
Limit
Unit
Method
Conditions
Symbol
Min
Max
Total dose irradiation
1019
3036
3061
3011
Gamma exposure VCES = 48 V
Collector to base cutoff current
Cutoff current, emitter to base
20
20
µA dc
µA dc
V dc
Bias condition D; V = 60 V dc
I
I
CB
CBO1
EBO1
Bias condition D; V = 5 V dc
EB
Breakdown voltage, collector to
emitter
60
Bias condition D; I = 10 mA dc;
V
I
C
(BR)CEO
pulsed (see 4.5.1)
Collector to emitter cutoff current
Collector to base cutoff current
Emitter to base cutoff current
3041
3036
100
20
nA dc
nA dc
nA dc
*
Bias condition C; V = 50 V dc
CE
CES
Bias condition D; V = 50 V dc
I
I
CB
CBO2
EBO2
3061
3076
100
Bias condition D; V = 4 V dc
EB
Forward-current transfer ratio
M through H2N2906A
VCE = 10 V dc; IC = 0.1 mA dc
[hFE1] 5/
[20]
M through H2N2907A
[37.5]
[hFE2] 5/
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
3076
3076
3076
3076
VCE = 10 V dc; IC = 1.0 mA dc
VCE = 10 V dc; IC = 10 mA dc
[20]
[50]
175
400
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
[hFE3] 5/
[hFE4] 5/
[hFE5] 5/
[20]
[50]
Forward-current transfer ratio
M through H2N2906A
M through H2N2907A
VCE = 10 V dc; IC = 150 mA dc
VCE = 10 V dc; IC = 500 mA dc
[20]
[50]
120
300
Forward-current transfer ratio
M through H2N2906A
[20]
[25]
M through H2N2907A
Collector-emitter saturation
voltage
3071
3071
IC = 150 mA dc; IB = 15 mA dc;
IC = 500 mA dc; IB = 50 mA dc;
VCE(sat)1
.46
V dc
V dc
Collector-emitter saturation
voltage
VCE(sat)2
1.84
See footnotes at end of table.
20
MIL-PRF-19500/291U
* TABLE II. Group D inspection - Continued.
MIL-STD-750
Inspection 1/ 2/ 3/
Limit
Unit
Method
Conditions
Symbol
Min
0.6
Max
Subgroup 2 - Continued.
Base-emitter saturation voltage
3066
3066
1.5
3.0
V dc
Test condition A; I = 150 mA dc;
V
V
C
BE(sat)1
BE(sat)2
I
= 15 mA dc; pulsed (see 4.5.1)
B
Base-emitter saturation voltage
Test condition A; I = 500 mA dc;
C
I
= 50 mA dc; pulsed (see 4.5.1)
B
1/ Tests to be performed on all devices receiving radiation exposure.
2/ For sampling plan, see MIL-PRF-19500.
* 3/ Electrical characteristics apply to the corresponding AL, UA, UB, UBC, UBN, and UBCN suffix versions unless
otherwise noted.
4/ See 6.2.f herein.
5/ See method 1019, of MIL-STD-750, for how to determine [hFE] by first calculating the delta (1/hFE) from the pre-
and post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE
]
value can never exceed the pre-radiation minimum hFE that it is based upon.
21
MIL-PRF-19500/291U
TABLE III. Group E inspection (all quality levels) - for qualification only.
MIL-STD-750
Inspection
Qualification
Method
Conditions
Subgroup 1
45 devices
c = 0
Temperature cycling
(air to air)
1051
1071
Test condition C, 500 cycles.
Hermetic seal
Fine leak
Gross leak
Electrical measurements
Subgroup 2
See table I, subgroup 2 and 4.5.3 herein.
45 devices
c = 0
Intermittent life
1037
3131
V
= 10 V dc, 6,000 cycles. Adjust device current, or
CB
power, to achieve a minimum ∆T of 100°C.
J
Electrical measurements
See table I, subgroup 2 and 4.5.3 herein.
Subgroup 4
15 devices
c = 0
Thermal resistance
R
may be calculated but shall be measured once
θJSP(IS)
in the same package with a similar die size to confirm
calculations (may apply to multiple slash sheets).
R
need be calculated only.
θJSP(AM)
Thermal impedance
curves
See MIL-PRF-19500, table E-IX, group E, subgroup 4.
Sample size
N/A
Subgroup 5
Not applicable
Subgroup 6
ESD
11 devices
1020
1033
Subgroup 8
45 devices
c = 0
Reverse stability
Condition B.
22
MIL-PRF-19500/291U
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ T specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
J
maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their application.
FIGURE 6. Temperature-power derating for 2N2906A, 2N2906AL, 2N2907A and 2N2907AL
(RθJA) leads .125 inch (3.18 mm) PCB (TO-18).
23
MIL-PRF-19500/291U
Temperature-Power Derating Curve
Tc =+25°C; 2N2906A, 2N2906Al, 2N2907A, and 2N2907AL
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ T specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
J
maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their application.
FIGURE 7. Temperature-power derating for 2N2906A, 2N2906AL, 2N2907A and 2N2907AL
(RθJC), base case mount (TO-18).
24
MIL-PRF-19500/291U
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ T specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
J
maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their application.
FIGURE 8. Temperature-power derating for 2N2906AUA and 2N2907AUA (RθJSP(IS)), infinite sink 4-points.
25
MIL-PRF-19500/291U
Temperature-Power Derating Curve
TSP(AM) = 25°C 2N2906AUA, and 2N2907AUA
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ T specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
J
maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their application.
FIGURE 9. Temperature-power derating for 2N2906AUA and 2N2907AUA (RθJSP(AM)
)
4-point solder pad (adhesive mount to PCB).
26
MIL-PRF-19500/291U
Temperature-Power Derating Curve
TSP(is) = 25°C 2N2906AUB, 2N2906AUBC, 2N2907AUB, and
2N2907AUBC
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ T specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
J
maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their application.
* FIGURE 10. Temperature-power derating for 2N2906AUB, UBC, UBN, and UBCN
2N2907AUB, UBC,UBN, and UBCN (RθJSP(IS)) infinite sink 3-point.
27
MIL-PRF-19500/291U
Maximum Thermal Impedance
2N2906A and 2N2907A TO-18 package with 0.125” lead mount to PCB
FIGURE 11. Thermal impedance graph (RθJA) for 2N2906A, 2N2906AL, 2N2907A, and 2N2907AL (TO-18).
28
MIL-PRF-19500/291U
Maximum Thermal Impedance
2N2906A and 2N2907A TO-18 package with case base in copper sink.
FIGURE 12. Thermal impedance graph (RθJC) for 2N2906A, 2N2906AL, 2N2907A, and 2N2907AL (TO-18).
29
MIL-PRF-19500/291U
Maximum Thermal Impedance
2N2906A and 2N2907A (UA) 4 points solder pads (infinite sink mount to PCB).
FIGURE 13. Thermal impedance graph (RθJSP(IS)) for 2N906A and 2N2907A (UA).
30
MIL-PRF-19500/291U
Maximum Thermal Impedance
2N2906A and 2N2907A (UA) 4 points solder pads (adhesive mount to PCB).
FIGURE 14. Thermal impedance graph (RθJSP(AM)) for 2N906A and 2N2907A (UA).
31
MIL-PRF-19500/291U
Maximum Thermal Impedance
2N2906A and 2N2907A (UB and UBC) 3 points solder pads (infinite sink mount) to PCB.
* FIGURE 15. Thermal impedance graph (RθJSP(IS)) for 2N906A and 2N2907A (UB, UBC, UBN, and UBCN).
32
MIL-PRF-19500/291U
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the generator
source impedance shall be 50 ohms.
2. Sampling oscilloscope: Zin ≥ 100 K ohms, Cin ≤ 12 pF, rise time ≤ 5 ns.
FIGURE 16. Saturated turn-on switching time test circuit.
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the generator
source impedance shall be 50 ohms.
2. Sampling oscilloscope: Zin ≥ 100 K ohms, Cin ≤ 12 pF, rise time ≤ 5 ns.
3. Alternate test point for high impedance attenuating probe.
FIGURE 17. Saturated turn-off switching time test circuit.
33
MIL-PRF-19500/291U
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these
personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging
requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or
Defense Agency, or within the Military Service’s system commands. Packaging data retrieval is available from the
managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
d. Product assurance level and type designator.
e. For die acquisition, the letter version must be specified (see figures 5 and 6).
f. For acquisition of RHA designed devices, table II, subgroup 1 testing of group D is optional. If subgroup 1
testing is desired, it must be specified in the contract.
*
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or
not such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
DLA Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An
online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at
https://assist.dla.mil .
6.4 Supersession information. Devices covered by this specification supersede the manufacturers' and users'
Part or Identifying Number (PIN). The term Part or Identifying Number (PIN) is equivalent to the term part number
which was previously used in this specification. This information in no way implies that manufacturers' PIN's are
suitable as a substitute for the military PIN.
34
MIL-PRF-19500/291U
6.5 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCB2N2907A) will be identified on the QML.
Die ordering information (1) (2)
PIN
Manufacturer
43611
34156
2N2906A
2N2907A
JANHCB2N2906A
JANHCB2N2907A
JANHCD2N2906A
JANHCD2N2907A
(1) For JANKC level, replace JANHC with JANKC.
(2) JANHCA, JANKCA, JANHCC, and JANKCC versions are obsolete.
6.6 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 85
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2012-107)
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19, 99
* NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.dla.mil.
35
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