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JAN2N3057A [MICROSEMI]

LOW POWER NPN SILICON TRANSISTOR; 低功率NPN硅晶体管

JAN2N3057A


元器件型号：	JAN2N3057A
生产厂家：	MICROSEMI CORPORATION
描述和应用：	LOW POWER NPN SILICON TRANSISTOR 低功率NPN硅晶体管晶体小信号双极晶体管开关
PDF文件：	总2页 (文件大小：65K)
下载文档：	下载PDF数据表文档文件
型号参数：JAN2N3057A参数

JAN2N3095

Silicon Controlled Rectifier, 70000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AC

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0 IRF

JAN2N3097

Silicon Controlled Rectifier, 70000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AC

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0 IRF

JAN2N3227

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-18

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37 ETC

JAN2N3227UB

BJT

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11 ETC

JAN2N3227UB

Small Signal Bipolar Transistor, 20V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3

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0 MICROSEMI

JAN2N3250A

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18

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67 ETC

JAN2N3250A

Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-18, 3 PIN

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0 MICROSEMI

JAN2N3250AUB

Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3

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0 MICROSEMI

JAN2N3251A

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18

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66 ETC

JAN2N3251A

Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-18,

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1 RAYTHEON

JAN2N3251A

Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN

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0 MICROSEMI

JAN2N326

TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 2A I(C) | TO-3VAR

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18 ETC

JAN2N333

TRANSISTOR | BJT | NPN | 25MA I(C) | TO-5

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28 ETC

JAN2N333A

TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 25MA I(C) | TO-5

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22 ETC

JAN2N333ALT2

BJT

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25 ETC

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