JAN2N6385 [MICROSEMI]
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN;
| 型号： | JAN2N6385 |
| 厂家： | 
Microsemi |
| 描述： | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN 局域网 晶体管 |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 523
Devices
Qualified Level
JAN, JANTX
JANTXV
2N6383
2N6384
2N6385
MAXIMUM RATINGS
Ratings
Symbol 2N6383 2N6384 2N6385 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
40
60
80
Vdc
Vdc
Vdc
Adc
Adc
VCEO
VCBO
VEBO
IB
40
60
80
5.0
0.25
10
Collector Current
IC
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
6.0
100
W
W
0C
PT
Operating & Storage Temperature
-55 to +175
Top, T
stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
0C/W
TO-3* (TO-204AA)
Thermal Resistance Junction-to-Case
1.75
R
qJC
1) Derate linearly 34.2 mW/0C above TA > +250C
2) Derate linearly 571 mW/0C above TC > +250C
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
40
60
80
2N6383
2N6384
2N6385
Vdc
V(BR)
CEO
Collector-Emitter Breakdown Voltage
40
60
80
IC = 200 mAdc, RBB = 100 W
2N6383
2N6384
2N6385
Vdc
V(BR)
CER
Collector-Base Cutoff Current
VCE = 40 Vdc
VCE = 60 Vdc
1.0
1.0
1.0
2N6383
2N6384
2N6385
mAdc
ICBO
VCE = 80 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6383, 2N6384, 2N6385, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Emitter-Base Cutoff Current
Symbol
Min.
Max.
Unit
5.0
mAdc
IEBO
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VCE = 40 Vdc
VCE = 60 Vdc
1.0
1.0
1.0
2N6383
2N6384
2N6385
mAdc
mAdc
ICEO
VCE = 80 Vdc
Collector-Emitter Cutoff Current
VCE = 40 Vdc, VBE = 1.5 Vdc
VCE = 60 Vdc, VBE = 1.5 Vdc
VCE = 80 Vdc, VBE = 1.5 Vdc
0.3
0.3
0.3
2N6383
2N6384
2N6385
ICEX
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 5.0 Adc, VCE = 3.0 Vdc
IC = 10 Adc, VCE = 3.0 Vdc
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 10 mAdc
IC = 10 Adc, IB = 0.1 Adc
Base-Emitter Voltage
IC = 5.0 Adc, VCE = 3.0 Vdc
IC = 10 Adc, VCE = 3.0 Vdc
DYNAMIC CHARACTERISTICS
1,000
100
20,000
hFE
2.0
3.0
Vdc
Vdc
VCE(sat)
2.8
4.5
VBE(on)
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 MHz
Output Capacitance
20
300
200
½hfe½
pF
Cobo
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 5.0 Adc; IB1 = 20 mAdc
Turn-Off Time
ton
ms
ms
2.5
10
toff
VCC = 30 Vdc; IC = 5.0 Adc; IB1 = -IB2 = 20 mAdc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 10 Vdc, IC = 10 Adc
Test 2
VCE = 30 Vdc, IC = 3.33 Adc
Test 3
All Types
All Types
VCE = 40 Vdc, IC = 1.5 Adc
VCE = 60 Vdc, IC = 0.4 Adc
VCE = 80 Vdc, IC = 0.16 Adc
2N6383
2N6384
2N6385
(3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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