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元器件品牌
JAN2N7370
[MICROSEMI]
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR; NPN达林顿大功率硅晶体管
元器件型号：
JAN2N7370
生产厂家：
MICROSEMI CORPORATION
描述和应用：
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
NPN达林顿大功率硅晶体管
晶体 晶体管 功率双极晶体管 局域网 高功率电源
PDF文件：
总2页 (文件大小：56K)
下载文档：
下载PDF数据表文档文件
型号参数：JAN2N7370参数
查看货源
JAN2N7371
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
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11
MICROSEMI
JAN2N7372
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-254AA
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23
ETC
JAN2N7372
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-254AA, Metal, 3 Pin, TO-254AA, 3 PIN
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0
MICROSEMI
JAN2N7373
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-254AA
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156
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20
ETC
JAN2N7434
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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156
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1
INFINEON
JAN2N918
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72
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48
ETC
JAN2N918
NPN LOW POWER SILICON TRANSISTOR
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156
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24
MICROSEMI
JAN2N918
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-206AF
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156
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0
MOTOROLA
JAN2N918UB
NPN LOW POWER SILICON TRANSISTOR
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5
MICROSEMI
JAN2N918UB
BJT
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156
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8
ETC
JAN2N930
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 30MA I(C) | TO-18
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47
ETC
JAN2N930UB
BJT
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156
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10
ETC
JAN3891A
Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
Warning
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156
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0
MICROSEMI
JAN3891AR
Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
Warning
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156
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0
MICROSEMI
JAN3893A
Rectifier Diode, 1 Phase, 1 Element, 20A, 400V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
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0
MICROSEMI
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