JANRH821A [MICROSEMI]

Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN;
JANRH821A
型号: JANRH821A
厂家: Microsemi    Microsemi
描述:

Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN

二极管
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1N821, A, -1 thru 1N829, A, -1 DO-7  
6.2 & 6.55 Volt Temperature Compensated  
Zener Reference Diodes  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
The popular 1N821 thru 1N829 series of Zero-TC Reference Diodes  
provides a selection of both 6.2 V and 6.55 V nominal voltages and  
temperature coefficients to as low as 0.0005%/oC for minimal voltage  
change with temperature when operated at 7.5 mA. These glass axial-  
leaded DO-7 reference diodes are also available in JAN, JANTX, JANTXV,  
and JANS military qualifications. Microsemi also offers numerous other  
Zener Reference Diode products for a variety of other voltages up to 200 V.  
DO-7  
(DO-204AA)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
JEDEC registered 1N821 thru 1N829 series  
Internal metallurgical bonds  
Zener Voltage selection of 6.2V and 6.55V  
1N821, 823, 825, 827 and 829 also have  
military qualification to MIL-PRF-19500/159 up  
to the JANS level by adding JAN, JANTX,  
JANTXV, or JANS prefixes to part numbers a  
well as the “-1” suffix, e.g. JANTX1N829-1, etc.  
Provides minimal voltage changes over a broad  
temperature range for instrumentation and  
other circuit designs requiring a voltage  
reference  
Temperature coefficient selections available  
from 0.01%/ºC to 0.0005%/ºC  
Tight voltage tolerances with nominal voltage of  
6.35 V available by adding tolerance 1%, 2%,  
3%, etc. after the part number for identification  
e.g. 1N827 2%, 1N829A 1%, etc  
Military surface mount equivalents also  
available in DO-213AA with UR-1 suffix and  
JAN, JANTX, or JANTXV prefix, e.g.  
Flexible axial-lead mounting terminals  
JANTX1N829UR-1 (see separate data sheet)  
Nonsensitive to ESD per MIL-STD-750 Method  
1020  
Also available in DO-35 package (see separate  
data sheet)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Operating & StorageTemperature: -65oC to  
CASE: Hermetically sealed glass case with  
+175oC  
DO-7 (DO-204AA) package  
DC Power Dissipation: 500 mW @ TL = 25oC  
NOTE: For optimum voltage-temperature  
stability, IZ = 7.5 mA (less than 50 mW in  
dissipated power)  
TERMINALS: Leads, tin-lead plated solderable  
per MIL-STD-750, Method 2026  
MARKING: Part number and cathode band  
(except double anode 1N822 and 1N824)  
Solder temperatures: 260 oC for 10 s  
(maximum)  
POLARITY: Reference diode to be operated  
with the banded end positive with respect to the  
opposite end  
TAPE & REEL option: Standard per EIA-296  
(add “TR” suffix to part number)  
WEIGHT: 0.2 grams.  
See package dimensions on last page  
Copyright 2003  
Microsemi  
Page 1  
7-30-2003 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1N821, A, -1 thru 1N829, A, -1 DO-7  
6.2 & 6.55 Volt Temperature Compensated  
Zener Reference Diodes  
S C O T T S D A L E D I V I S I O N  
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified  
VOLTAGE  
MAXIMUM  
REVERSE  
CURRENT  
IR @ 3 V  
MAXIMUM  
ZENER  
EFFECTIVE  
TEMPERATURE  
COEFFICIENT  
TEMPERATURE  
STABILITY  
ZENER  
VOLTAGE  
(Note 1 and 4)  
VZ @ IZT  
ZENER  
TEST  
IMPEDANCE  
(Note 2)  
ZZT  
JEDEC  
CURRENT  
IZT  
(VZT MAX)  
-55o to +100o  
(Note 3 and 4)  
TYPE NUMBER  
α
VZ  
VOLTS  
5.9 – 6.5  
5.9 – 6.5  
5.9 – 6.5  
5.9 – 6.5  
5.9 – 6.5  
5.9 – 6.5  
5.9 – 6.5  
5.9 – 6.5  
6.2 – 6.9  
5.9 – 6.5  
5.9 – 6.5  
6.2 – 6.9  
5.9 – 6.5  
5.9 – 6.5  
mA  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
OHMS  
15  
µA  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
mV  
96  
96  
96  
48  
48  
48  
19  
19  
20  
9
%/oC  
0.01  
1N821  
1N821A  
1N822†  
1N823  
10  
0.01  
15  
0.01  
15  
0.005  
0.005  
0.005  
0.002  
0.002  
0.002  
0.001  
0.001  
0.001  
0.0005  
0.0005  
1N823A  
1N824†  
1N825  
10  
15  
15  
1N825A  
1N826  
10  
15  
1N827  
15  
1N827A  
1N828  
10  
9
15  
10  
5
1N829  
15  
1N829A  
10  
5
*JEDEC Registered Data.  
†Double Anode; electrical specifications apply under both bias polarities.  
NOTES:  
1. When ordering devices with tighter tolerances than specified, use a nominal VZ voltage of 6.2V.  
2. Zener impedance measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25oC.  
3. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the  
specified mV change at discrete temperature between the established limits.  
4. Voltage measurements to be performed 15 seconds after application of dc current.  
5. Designate Radiation Hardened devices with “RH” prefix instead of “1N”, i.e., RH829A instead of 1N829A.  
GRAPHS  
The curve shown in Figure 1 is typical of the diode series and  
greatly simplifies the estimation of the Temperature Coefficient  
(TC) when the diode is operated at currents other than 7.5mA.  
EXAMPLE: A diode in this series is operated at a current of  
7.5mA and has specified Temperature Coefficient (TC) limits of  
+/-0.005%/oC. To obtain the typical Temperature Coefficient  
limits for this same diode operated at a current of 6.0mA, the  
new TC limits (%/oC) can be estimated using the graph in  
FIGURE 1.  
At a test current of 6.0mA the change in Temperature Coefficient  
(TC) is approximately –0.0006%.oC. The algebraic sum of +/-  
0.005%oC and –0.0006%/oC gives the estimated limits of  
+0.0044%/oC and -0.0056%/oC.  
FIGURE 1  
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT  
WITH CHANGE IN OPERATING CURRENT.  
Copyright 2003  
Microsemi  
Page 2  
7-30-2003 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1N821, A, -1 thru 1N829, A, -1 DO-7  
6.2 & 6.55 Volt Temperature Compensated  
Zener Reference Diodes  
S C O T T S D A L E D I V I S I O N  
This curve in Figure 2 illustrates the change of  
diode voltage arising from the effect of  
impedance. It is in effect an exploded view of  
the zener operating region of the I-V  
characteristic.  
In conjunction with Figure 1, this curve can be  
used to estimate total voltage regulation under  
conditions of both varying temperature and  
current.  
I – OpFerIaGtinUgRCEurr2ent (mA)  
Z
TYPICAL CHANGE OF ZENER VOLTAGE WITH  
CHANGE IN OPERATING CURRENT  
DIMENSIONS  
All dimensions in INCH  
mm  
Copyright 2003  
Microsemi  
Page 3  
7-30-2003 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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