JANS1N4461US [MICROSEMI]

1.5 WATT ZENER DIODES; 1.5瓦齐纳二极管
JANS1N4461US
型号: JANS1N4461US
厂家: Microsemi    Microsemi
描述:

1.5 WATT ZENER DIODES
1.5瓦齐纳二极管

二极管 齐纳二极管 测试
文件: 总2页 (文件大小:124K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N6485US  
THRU  
• AVAILABLE IN JAN, JANTX, JANTXV AND JANS  
PER MIL-PRF-19500/406  
1N6491US  
AND  
1N4460US  
AND  
• 1.5 WATT ZENER DIODES  
• NON CAVITY CONSTRUCTION  
• METALLURGICALLY BONDED  
1N4461US  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +200°C  
Power Dissapation: 1.5W @ T =+25°C  
A
Power Derating: 10mW/°C above T =+25°C  
A
Forward Voltage: 1.0V dc @ I =200mA dc  
F
1.5 V dc @ I =1A dc  
F
MILLIMETERS  
INCHES  
DIM MIN  
MAX  
2.62  
0.71  
5.08  
MIN MAX  
0.091 0.103  
0.019 0.028  
0.168 0.200  
0.003MIN.  
D
F
G
2.31  
0.48  
4.28  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified  
S
0.08MIN.  
ZENER  
TEST  
DYNAMIC  
KNEE  
TEST  
REVERSE TEST  
MAXIMUM V  
Z
(REG)  
MAXIMUM  
SURGE  
VOLTAGE CURRENT IMPEDENCE IMPEDENCE CURRENT CURRENT VOLTAGE CURRENT  
(NOM.)  
±5%  
V
V
Z
TYPE  
I
(MAX.)  
(MAX.)  
I
(MAX.)  
I @V  
R
V
I
ZM  
ZT  
ZK  
R
Z
@I  
Z
@I  
ZT ZT  
ZK ZT  
R
FIGURE 1  
VOLTS  
mA  
OHMS  
OHMS  
mA  
µ A  
VOLTS  
MA  
VOLTS  
AMPS  
1N6485US  
1N6486US  
1N6487US  
1N6488US  
3.3  
3.6  
3.9  
4.3  
76.0  
69.0  
64.0  
58.0  
10  
10  
9
400  
400  
400  
400  
1.0  
1.0  
1.0  
1.0  
50  
50  
35  
5.0  
1.0  
1.0  
1.0  
1.0  
433  
397  
366  
332  
.90  
.80  
.75  
.70  
4.2  
3.9  
3.6  
3.3  
DESIGN DATA  
9
1N6489US  
1N6490US  
1N6491US  
1N4460US  
1N4461US  
4.7  
5.1  
5.6  
6.2  
6.8  
53.0  
49.0  
45.0  
40.0  
37.0  
8
7
5
4
2.5  
500  
500  
600  
200  
200  
1.0  
1.0  
1.0  
1.0  
1.0  
4.0  
1.0  
0.5  
10.0  
5.0  
1.0  
1.0  
2.0  
3.72  
4.08  
304  
280  
255  
230  
210  
.60  
.50  
.40  
.35  
.30  
3.0  
2.7  
2.5  
2.3  
2.1  
CASE: D-5A, hermetically sealed glass  
case, per MIL-PRF- 19500/406  
LEAD FINISH: Tin / Lead  
THERMAL RESISTANCE: (R  
20 °C/W maximum at L = 0  
):  
OJEC  
THERMAL IMPEDANCE: (Z  
°C/W maximum  
): 4.5  
OJX  
POLARITY: Diode to be operated with  
the banded (cathode) end positive.  
MOUNTING SURFACE SELECTION:  
The Axial Coefficient of Expansion  
(COE) of this device is approximately  
+ 4PPM / °C. The COE of the Mounting  
Surface System should be selected to  
provide a suitable match with this  
device.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (781) 689-0803  
WEBSITE: http://www.microsemi.com  
153  
1N6485US thru 1N6491US and 1N4460US  
and 1N4461US  
FIGURE 2  
1.5  
1.0  
O.5  
0
25  
50  
75  
100  
125  
150  
175  
T
AMBIENT TEMPERATURE (°C)  
A,  
POWER DERATING CURVE  
1000  
500  
400  
300  
3.3 VOLT  
200  
100  
5.1 VOLT  
50  
40  
30  
20  
10  
5
4
6.2 VOLT  
3
2
1
.1  
.2  
.5  
1
2
5
10  
20  
50  
100  
OPERATING CURRENT IZT (mA)  
FIGURE 3  
ZENER IMPEDANCE VS. OPERATING CURRENT  
154  

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