JANS2N3635UB [MICROSEMI]

Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3;


型号：	JANS2N3635UB
厂家：	Microsemi
描述：	Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 开关晶体管
文件：	总5页 (文件大小：169K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PNP SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/357

DEVICES

LEVELS

JAN

2N3634

2N3635

2N3636

2N3637

2N3634L

2N3634UB

2N3635L

2N3635UB

2N3636L

2N3636UB

2N3637L

2N3637UB

JANTX

JANTXV

JANS

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

2N3634* 2N3636*

2N3635* 2N3637*

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol

V_CEO

V_CBO

V_EBO

I_C

Unit

Vdc

Adc

140

5.0

1.0

175

5.0

1.0

Collector-Base Voltage

Emitter-Base Voltage

TO-5*

Collector Current

2N3634L, 2N3635L

2N3636L, 2N3637L

Total Power Dissipation

@ T_A= +25°C

@ T_C= +25°C

1.0

5.0

1.5

P_T**

UB:

Operating & Storage Junction Temperature Range

T_J, T_stg

-65 to +200

°C

* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding

devices.

** Consult 19500/357 for De-Rating curves.

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol

Min.

Max.

Unit

TO-39* (TO-205AD)

2N3634, 2N3635

2N3636, 2N3637

Collector-Emitter Breakdown Voltage

I_C= 10mAdc

V_(BR)CEO

Vdc

2N3634, 2N3635

2N3636, 2N3637

140

175

Collector-Base Cutoff Current

V_CB= 100Vdc

ηAdc

μAdc

100

I_CBO

_CB= 140Vdc

_CB= 175Vdc

2N3634, 2N3635

2N3636, 2N3637

3 PIN

2N3634UB, 2N3635UB

2N3636UB, 2N3637UB

Emitter-Base Cutoff Current

_EB= 3.0Vdc

V_EB= 5.0Vdc

ηAdc

μAdc

I_EBO

Collector-Emitter cutoff Current

I_CEO

μAdc

_CE= 100Vdc

T4-LDS-0156 Rev. 2 (101452)

Page 1 of 5

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

ON CHARACTERISTICS ⁽¹⁾

Symbol

Min.

Max.

Unit

Forward-Current Transfer Ratio

I_C= 0.1mAdc, V_CE= 10Vdc

I_C= 1.0mAdc, V_CE= 10Vdc

I_C= 10mAdc, V_CE= 10Vdc

I_C= 50mAdc, V_CE= 10Vdc

I_C= 150mAdc, V_CE= 10Vdc

2N3634, 2N3636

2N3635, 2N3637

150

300

h_FE

I_C= 0.1mAdc, V_CE= 10Vdc

I_C= 1.0mAdc, V_CE= 10Vdc

I_C= 10mAdc, V_CE= 10Vdc

I_C= 50mAdc, V_CE= 10Vdc

I_C= 150mAdc, V_CE= 10Vdc

100

Collector-Emitter Saturation Voltage

I_C= 10mAdc, I_B= 1.0mAdc

I_C= 50mAdc, I_B= 5.0mAdc

0.3

0.6

V_CE(sat)

Vdc

Base-Emitter Saturation Voltage

I_C= 10mAdc, I_B= 1.0mAdc

I_C= 50mAdc, I_B= 5.0mAdc

0.8

0.9

V_BE(sat)

0.65

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Forward Current Transfer Ratio

I_C= 30mAdc, V_CE= 30Vdc, f = 100MHz

2N3634, 2N3636

2N3635, 2N3637

1.5

2.0

8.0

8.5

|h_fe|

Forward Current Transfer Ratio

I_C= 10mAdc, V_CE= 10Vdc, f = 1.0kHz

2N3634, 2N3636

2N3635, 2N3637

160

320

h_fe

Small-Signal Short-Circuit Input Impedance

I_C= 10mAdc, V_CE= 10Vdc, f = 1.0kHz

2N3634, 2N3636

2N3635, 2N3637

100

200

600

1200

h_ie

h_oe

μs

Small-Signal Open-Circuit Input Impedance

I_C= 10mAdc, V_CE= 10Vdc, f = 1.0kHz

200

Output Capacitance

V_CB= 20Vdc, I_E= 0, 100 kHz ≤ f ≤ 1.0MHz

C_obo

Input Capacitance

C_ibo

V_EB= 1.0Vdc, I_C= 0, 100 kHz ≤ f ≤ 1.0MHz

Noise Figure

f = 100Hz

f = 1.0kHz

f = 10kHz

5.0

3.0

V_CE= 10Vdc, I_C= 0.5mAdc, R_g= 1.0kΩ

(1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%

T4-LDS-0156 Rev. 2 (101452)

Page 2 of 5

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

SAFE OPERATING AREA

DC Tests

T_C= 25°C, 1 Cycle, t = 1.0s

Test 1

V_CE= 100Vdc, I_C= 30mAdc

2N3634, 2N3635

2N3636, 2N3637

_CE= 130Vdc, I_C= 20mAdc

Test 2

V_CE= 50Vdc, I_C= 95mAdc

Test 3

V_CE= 5.0Vdc, I_C= 1.0Adc

T4-LDS-0156 Rev. 2 (101452)

Page 3 of 5

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PACKAGE DIMENSIONS

Dimensions

Millimeters

Ltr

Inches

Notes

Min

.305

.240

.335

Max

Min

Max

8.51

6.60

9.40

.335

.260

.370

7.75

6.10

8.51

.200 TYP

5.08 TYP

L₁

L₂

.016

.021

0.41

0.53

See notes 7, 9, and 10

.019

050

0.41

0.48

1.27

.250

.100

6.35

2.54

.050

.010

.045

.034

1.27

0.254

1.14

.029

.028

0.74

0.71

0.86

45° TP

Term 1

Term 2

Term 3

Emitter

Base

Collector

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Beyond r maximum, TW must be held to a minimum length of .021 inch (0.53 mm).

4. TL measured from maximum HD.

5. CD shall not vary more than ±.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.

6. Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of

true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by

direct methods or by gauge and gauging procedure.

7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL

minimum.

8. r (radius) applies to both inside corners of tab.

9. For transistor types 2N3634 through 2N3637, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)

maximum (TO-39).

10. For transistor types 2N3634L through 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm)

maximum (TO-5).

11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 1: Physical dimensions (TO-5 and TO-39)

T4-LDS-0156 Rev. 2 (101452)

Page 4 of 5

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

NOTES:

Dimensions

1. Dimensions are in inches.

Ltr

Inches

Millimeters

Min

1.17

2.92

2.16

Notes

2. Millimeters are given for general information only.

3. Hatched areas on package denote metallized areas.

4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 =

Shielding connected to the lid.

5. In accordance with ASME Y14.5M, diameters are.

equivalent to φx symbology

Min

.046

.115

.085

Max

.056

.128

.108

.128

.108

.038

.035

.040

.079

.024

.008

.012

.022

Max

1.42

3.25

2.74

3.25

2.74

0.96

0.89

1.02

2.01

0.61

.203

.305

.559

LL₁

LL₂

LS₁

LS₂

.022

.017

.036

.071

.016

0.56

0.43

0.91

1.81

0.41

r₁

r₂

FIGURE 2: Physical dimensions, surface mount 2N3634UB through 2N3637UB (UB version).

T4-LDS-0156 Rev. 2 (101452)

Page 5 of 5

JANS2N3635UB [MICROSEMI]

相关型号：

JANS2N3635UB/TR

JANS2N3636

JANS2N3636L

JANS2N3636UB

JANS2N3637

JANS2N3637/TR

JANS2N3637L

JANS2N3637UB/TR

JANS2N3700

JANS2N3700S

JANS2N3700UB

JANS2N3700UB/TR