JANS2N4029 [MICROSEMI]
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, TO-18, 3 PIN;![JANS2N4029](http://pdffile.icpdf.com/pdf2/p00236/img/icpdf/JANS2N4033UA_1384877_icpdf.jpg)
型号: | JANS2N4029 |
厂家: | ![]() |
描述: | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, TO-18, 3 PIN 开关 晶体管 |
文件: | 总6页 (文件大小:284K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/512
DEVICES
LEVELS
2N4029
2N4033
2N4033UA
2N4033UB
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Symbol
VCEO
VCBO
VEBO
IC
Value
80
Unit
Vdc
Vdc
Vdc
Adc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
80
5.0
TO-18 (TO-206AA)
2N4029
1.0
2N4029 1
0.5
0.8
0.5
Total Power Dissipation @ TA =
+25°C
2N4033 2
PT
W
2N4033UA, UB3
Operating & Storage Junction Temperature Range
Tj, Tstg
RθJC
-65 to +200
°C
2N4029
Thermal Resistance, Junction-to-Case
2N4033
80
40
°C/W
Note:
1. Derate linearly 2.86mW/°C for TA > +25°C
2. Derate linearly 4.56mW/°C for TA > +25°C
3. For UB package and use RθJC or see thermal curves in /512
TO-39 (TO-205AD)
2N4033
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Collector-Base Cutoff Current
VCB = 80Vdc
UA Package
μAdc
ηAdc
μAdc
10
10
25
ICBO
V
CB = 60Vdc
VCB = 60Vdc, TA = +150°C
Emitter-Base Cutoff Current
VEB = 5.0Vdc
10
25
μAdc
ηAdc
IEBO
V
EB = 3.0Vdc
Collector-Emitter Cutoff Current
BE = 2.0Vdc, VCE = 60Vdc
ICEX
25
ηAdc
V
UB Package
T4-LDS-0157 Rev. 2 (101305)
Page 1 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 100μAdc, VCE = 5.0Vdc
IC = 100mAdc, VCE = 5.0Vdc
IC = 500mAdc, VCE = 5.0Vdc
IC = 1.0Adc, VCE = 5.0Vdc
50
100
70
300
hFE
25
IC = 500mAdc, VCE = 5.0Vdc, TA = -55°C
30
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
IC = 1.0Adc, IB = 100mAdc
Base-Emitter Voltage
0.15
0.50
1.0
VCE(sat)
Vdc
Vdc
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
0.9
1.2
VBE(sat)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small–Signal Short-Circuit Forward
Current Transfer Ratio
IC = 50mAdc, VCE = 10Vdc, f = 100MHz
|hfe|
1.5
6.0
20
80
Output Capacitance
Cobo
Cibo
pF
pF
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
On-Time
td
15
ηs
VCC = 31.9Vdc; IC = 500mAdc; IB1 = 50mAdc
Rise Time
tr
25
ηs
ηs
V
CC = 31.9Vdc; IC = 500mAdc; IB1 = 50mAdc
Storage Time
ts
175
V
CC = 31.9V, IC = 500madc, IB1 = 50mAdc
Fall Time
tf
35
ηs
VCC = 31.9V, IC = 500madc, IB1 = 50mAdc
(4) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.
T4-LDS-0157 Rev. 2 (101305)
Page 2 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Inches Millimeters
Symbol
Notes
Min Max Min
.178 .195 4.52
.170 .210 4.32
.209 .230 5.31
Max
4.95
5.34
5.84
CD
CH
HD
LC
LD
LL
LU
L1
.100 TP
2.54 TP
6
.016 .021 0.41
0.53
7, 8
.500 .750 12.70 19.05 7, 8, 12
.016 .019 0.41
.050
0.48
1.27
7, 8
7, 8
7, 8
5
L2
.250
6.35
Q
.040
1.02
1.22
1.17
0.25
TL
TW
r
.028 .048 0.71
.036 .046 0.91
.010
3, 4
3
10
P
.100
2.54
45° TP
α
6
NOTES:
1
2
3
4
5
6
Dimension are in inches.
Millimeters equivalents are given for general information only.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by
direct methods.
7
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1
and beyond LL minimum.
8
9
All three leads.
The collector shall be internally connected to the case.
10 Dimension r (radius) applies to both inside corners of tab.
11 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
12 For “L” suffix devices, dimension LL is 1.50 (38.10mm) minimum, 1.75 (44.45mm) maximum.
FIGURE 1. Physical dimensions for 2N4029 (TO-18).
T4-LDS-0157 Rev. 2 (101305)
Page 3 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Dimensions
Symbol
Inches
Millimeters
Notes
Min Max Min
.305 .335 7.75
.240 .260 6.10
.335 .370 8.51
Max
8.51
6.60
9.40
CD
CH
HD
LC
LD
LL
LU
L1
.200 TP
5.08 TP
6
.016 .021 0.41
0.53
7, 8
.500 .750 12.70 19.05 7, 8, 12
.016 .019 0.41
.050
0.48
1.27
7, 8
7, 8
7, 8
5
L2
.250
6.35
Q
.050
1.27
1.14
0.86
0.25
TL
TW
r
.029 .045 0.74
.028 .034 0.71
.010
3, 4
3
10
P
.100
2.54
45° TP
α
6
NOTES:
1
2
3
4
5
6
Dimension are in inches.
Millimeters equivalents are given for general information only.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by
direct methods.
7
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1
and beyond LL minimum.
8
9
All three leads.
The collector shall be internally connected to the case.
10 Dimension r (radius) applies to both inside corners of tab.
11 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
12 For “L” suffix devices, dimension LL is 1.50 (38.10mm) minimum, 1.75 (44.45mm) maximum.
FIGURE 2. Physical dimensions for 2N4033 (TO-39).
T4-LDS-0157 Rev. 2 (101305)
Page 4 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Dimensions
Dimensions
Ltr.
A
Inches
Min Max Min Max
.061 .075 1.55 1.91
Millimeters Note Ltr.
Inches
Min Max
.0375 BSC
.155
Millimeters
Note
Min
Max
3
D2
D3
E
0.952 BSC
A1 .029 .041 0.74 1.04
B1 .022 .028 0.56 0.71
3.94
5.72
5.72
1.22
2.24
0.18
.215
.225
.225
.048
.088
.007
5.46
B2
B3 .006 .022 0.15 0.56
.145 .155 3.68 3.93
D1 .045 .055 1.14 1.39
.075 REF
1.91 REF
E3
L1
L2
L3
5
.032
.072
.003
0.81
1.83
0.08
D
5
NOTES:
1 Dimensions are in inches.
2 Millimeters equivalents are given for general information only.
3 Dimension “A” controls the overall package thickness. When a window lid is used, dimension “A” must increase by a
minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4 The corner shape (square, notch, radius, etc) may vary at the manufacturer’s option, from that shown on the drawing.
5 Dimensions “B3” minimum and “L3” minimum and the appropriately castellation length define an unobstructed three-
dimensional space traversing all of the ceramic layers in which a castellation was designed. (Castellations are required on
bottom two layers, optional on top ceramic layer.) Dimension “B3” maximum and “L3” maximum define the maximum width
and depth of the castellation at any point on its surface. Measurement of these dimensions may be made prior to solder dipping.
6 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 3. Physical dimensions, surface mount (UA version).
T4-LDS-0157 Rev. 2 (101305)
Page 5 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Dimensions
Dimensions
Symbol
Inches
Millimeters Note
Symbol
Inches
Millimeters Note
Min Max Min Max
.046 .056 1.17 1.42
.115 .128 2.92 3.25
.085 .108 2.16 2.74
Min Max Min Max
.036 .040 0.91 1.02
.071 .079 1.81 2.01
.016 .024 0.41 0.61
BH
BL
BW
CL
CW
LL1
LL2
LS1
LS2
LW
r
r1
r2
.128
.108
3.25
2.74
.008
.012
.022
.203
.305
.559
.022 .038 0.56 0.96
.017 .035 0.43 0.89
NOTES:
1 Dimensions are in inches.
2 Millimeters are given for general information only.
3 Hatched areas on package denote metalized areas.
4 Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 4. Physical dimensions, surface mount (UB version).
T4-LDS-0157 Rev. 2 (101305)
Page 6 of 6
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